公开(公告)号：US20140077374A1

公开(公告)日：2014-03-20

申请号：US13619233

申请日：2012-09-14

Applicant: Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

Inventor： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/13 ,  H01L27/088 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

Abstract translation: 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。

公开(公告)号：US20130285244A1

公开(公告)日：2013-10-31

申请号：US13457841

申请日：2012-04-27

Applicant: Yung-Chi Lin ,  Wen-Chih Chiou ,  Yen-Hung Chen ,  Sylvia Lo ,  Jing-Cheng Lin

Inventor： Yung-Chi Lin ,  Wen-Chih Chiou ,  Yen-Hung Chen ,  Sylvia Lo ,  Jing-Cheng Lin

IPC: H01L23/48 ,  H01L21/283

CPC classification number: H01L21/76898 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05099 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05541 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/05552

Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.

Abstract translation: 公开了一种用于向TSV提供沉积在TSV的顶表面下方的阻挡层的系统和方法，顶表面具有减小的地形变化。 将底部TSV焊盘沉积到通孔中，然后抛光，使得顶表面在衬底顶表面下方。 然后在通孔中沉积阻挡层，并且沉积在阻挡层上的顶部TSV焊盘。 顶部的TSV屏障垫被抛光，以使顶部TSV焊盘的顶部表面与衬底的高度一致。 阻挡垫可以小于约1微米厚，并且顶部TSV垫可以小于约6微米厚。 阻挡垫可以是来自顶部和底部TSV垫的不同金属，并且可以选自包括钛，钽，钴，镍等的组。

公开(公告)号：US08338939B2

公开(公告)日：2012-12-25

申请号：US12834304

申请日：2010-07-12

Applicant: Jing-Cheng Lin ,  Yung-Chi Lin ,  Ku-Feng Yang

Inventor： Jing-Cheng Lin ,  Yung-Chi Lin ,  Ku-Feng Yang

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/762 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L24/11 ,  H01L29/78 ,  H01L2224/131 ,  H01L2924/01029 ,  H01L2924/00014

Abstract: A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.

Abstract translation: 一种器件包括具有与前表面相对的前表面和后表面的半导体衬底。 绝缘区域从前表面延伸到半导体衬底中。 层间电介质（ILD）在绝缘区域之上。 着陆垫从ILD的顶表面延伸到绝缘区域中。 贯穿基板通孔（TSV）从半导体基板的背面延伸到着陆焊盘。

公开(公告)号：US20110193221A1

公开(公告)日：2011-08-11

申请号：US12774558

申请日：2010-05-05

Applicant: Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

Inventor： Hsien-Pin Hu ,  Chen-Hua Yu ,  Ming-Fa Chen ,  Jing-Cheng Lin ,  Jiun Ren Lai ,  Yung-Chi Lin

IPC: H01L23/538 ,  H01L21/60 ,  H01L21/50 ,  H01L23/488

CPC classification number: H01L23/5389 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L2221/68345 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/81 ,  H01L2924/00012

Abstract: A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Abstract translation: 一种装置包括插入件，其包括具有顶表面的基板。 互连结构形成在衬底的顶表面上，其中互连结构包括至少一个电介质层，以及至少一个电介质层中的金属特征。 多个穿通基板通孔（TSV）在基板中并电耦合到互连结构。 第一个模具结束并粘贴到插入器上。 第二管芯被结合到插入件上，其中第二管芯在互连结构之下。

公开(公告)号：US5927688A

公开(公告)日：1999-07-27

申请号：US980647

申请日：1997-12-01

Applicant: Yung-Chi Lin

Inventor： Yung-Chi Lin

IPC: A47C3/30 ,  F16K31/00

CPC classification number: A47C3/30 ,  Y10S251/904

Abstract: A control valve for an air pressure bar includes a valve cap having an annular groove in a outer surface, a valve body having an annular ridge and an aperture in an annular wall, a valve base and a pin rod. The aperture producing elasticity to let the valve body combined tightly with the valve cap and a stepped notch in an annular wall below the upper center cavity of the valve body form an air passageway for gas to flow through. The valve body and the valve base are combined together by an annular ridge on an inner surface of a lower center cavity of the valve body and an annular groove in an outer surface of the valve base. The valve base has a stop on an inner surface of a center hole to stop a bottom of the pin rod not falling out of the valve body.

Abstract translation: 用于空气压力杆的控制阀包括：阀盖，其在外表面具有环形槽，阀体具有环形凸脊和环形壁中的孔，阀座和销杆。 产生弹性的孔使阀体与阀盖紧密结合，并且在阀体的上中心腔下方的环形壁中的阶梯式凹口形成用于气体流过的空气通道。 阀体和阀座通过在阀体的下部中心腔的内表面上的环形脊和阀底部的外表面中的环形槽组合在一起。 阀座在中心孔的内表面上具有止动件，以阻止销杆的底部不会从阀体脱出。

公开(公告)号：US09112007B2

公开(公告)日：2015-08-18

申请号：US13619233

申请日：2012-09-14

Applicant: Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

Inventor： Yung-Chi Lin ,  Hsin-Yu Chen ,  Lin-Chih Huang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/525 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/528 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/13 ,  H01L27/088 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.

Abstract translation: 一种装置包括形成在基板中的通孔。 通孔连接在基板的第一侧和第二侧之间。 通孔包括与基板的第二侧相邻的底部，其中底部由导电材料形成。 通孔还包括由导电材料形成的侧壁部分和形成在侧壁部分之间的中间部分，其中中间部分由电介质材料形成。

公开(公告)号：US08946742B2

公开(公告)日：2015-02-03

申请号：US12897124

申请日：2010-10-04

Applicant: Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

Inventor： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC: H01L33/00 ,  H01L21/768 ,  H01L21/683 ,  H01L23/48 ,  H01L33/48 ,  H01L33/64 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.

Abstract translation: 具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。 流程非常简单，成本效益高。 所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。 通过组合单独的结构，产生具有高散热能力的低电阻电连接。 此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。 通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。 此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。 通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。

公开(公告)号：US08791011B2

公开(公告)日：2014-07-29

申请号：US13775983

申请日：2013-02-25

Applicant: Yung-Chi Lin ,  Weng-Jin Wu ,  Shau-Lin Shue

Inventor： Yung-Chi Lin ,  Weng-Jin Wu ,  Shau-Lin Shue

IPC: H01L21/4763

CPC classification number: H01L21/76871 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2924/00014

Abstract: In a process, an opening is formed to extend from a front surface of a semiconductor substrate through a part of the semiconductor substrate. A metal seed layer is formed on a sidewall of the opening. A block layer is formed on only a portion of the metal seed layer. A metal layer is formed on the block layer and the metal seed layer to fill the opening.

Abstract translation: 在此过程中，形成从半导体衬底的前表面延伸穿过半导体衬底的一部分的开口。 金属种子层形成在开口的侧壁上。 仅在金属种子层的一部分上形成阻挡层。 在阻挡层和金属种子层上形成金属层以填充开口。

公开(公告)号：US08772945B2

公开(公告)日：2014-07-08

申请号：US13457841

申请日：2012-04-27

Applicant: Yung-Chi Lin ,  Wen-Chih Chiou ,  Yen-Hung Chen ,  Sylvia Lo ,  Jing-Cheng Lin

Inventor： Yung-Chi Lin ,  Wen-Chih Chiou ,  Yen-Hung Chen ,  Sylvia Lo ,  Jing-Cheng Lin

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0346 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05025 ,  H01L2224/05026 ,  H01L2224/05099 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05541 ,  H01L2224/05571 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/05552

Abstract: A system and method are disclosed for providing a through silicon via (TSV) with a barrier pad deposited below the top surface of the TSV, the top surface having reduced topographic variations. A bottom TSV pad is deposited into a via and then polished so the top surface is below the substrate top surface. A barrier pad is then deposited in the via, and a top TSV pad deposited on the barrier pad. The top TSV barrier pad is polished to bring the top surface of the top TSV pad about level with the substrate. The barrier pad may be less than about 1 microns thick, and the top TSV pad may be less than about 6 microns thick. The barrier pad may be a dissimilar metal from the top and bottom TSV pads, and may be selected from a group comprising titanium, tantalum, cobalt, nickel and the like.

Abstract translation: 公开了一种用于向TSV提供沉积在TSV的顶表面下方的阻挡层的系统和方法，顶表面具有减小的地形变化。 将底部TSV焊盘沉积到通孔中，然后抛光，使得顶表面在衬底顶表面下方。 然后在通孔中沉积阻挡层，并且沉积在阻挡层上的顶部TSV焊盘。 顶部的TSV屏障垫被抛光，以使顶部TSV焊盘的顶部表面与衬底的高度一致。 阻挡垫可以小于约1微米厚，并且顶部TSV垫可以小于约6微米厚。 阻挡垫可以是来自顶部和底部TSV垫的不同金属，并且可以选自包括钛，钽，钴，镍等的组。

公开(公告)号：US08507940B2

公开(公告)日：2013-08-13

申请号：US12879584

申请日：2010-09-10

Applicant: Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

Inventor： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC: H01L33/00

CPC classification number: H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.

Abstract translation: 具有上述通孔硅封装（或通孔）的封装衬底为需要热管理的半导体芯片提供侧向和垂直散热​​路径。 具有高占空比的通过硅插头（TSP）的设计可以最有效地提供散热。 具有双面梳状图案的TSP设计可以提供等于或大于50％的高占空比。 具有高占空比的封装衬底对于产生大量热量的半导体芯片是有用的。 这种半导体芯片的例子是发光二极管（LED）芯片。