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公开(公告)号：US09091647B2
公开(公告)日：2015-07-28
申请号：US13607720
申请日：2012-09-08
Applicant: Yi-Hsien Chang , Chun-Ren Cheng , Shih-Wei Lin , Yi-Shao Liu
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Shih-Wei Lin , Yi-Shao Liu
IPC: G01N27/00 , H01L21/00 , G01N27/414 , H01L27/28
CPC classification number: G01N27/4145 , H01L21/28525 , H01L21/31111 , H01L21/32135 , H01L21/7684 , H01L21/76877 , H01L21/823437 , H01L21/823475 , H01L27/283
Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括具有感测栅极底部和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 微孔通过不同材料的多次蚀刻操作形成，包括牺牲塞，以暴露感测门而不产生等离子体的损伤。
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公开(公告)号：US08723123B2
公开(公告)日：2014-05-13
申请号：US13595743
申请日：2012-08-27
Applicant: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
Inventor： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
IPC: G01J5/20
CPC classification number: G01J1/1626 , G01J1/4204 , G01J3/465 , H01L31/02164 , H01L31/103 , H01L31/105
Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
Abstract translation: 光检测器包括第一光传感器和用于检测入射光的第二光传感器。 将Ge膜设置在第一光传感器上以通过红外（IR）波长的光并阻挡可见波长的光。 Ge膜不覆盖第二个光传感器。
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公开(公告)号：US20140073039A1
公开(公告)日：2014-03-13
申请号：US13607720
申请日：2012-09-08
Applicant: Yi-Hsien Chang , Chun-Ren Cheng , Shih-Wei Lin , Yi-Shao Liu
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Shih-Wei Lin , Yi-Shao Liu
IPC: G01N27/414 , H01L21/8232 , C12M1/34
CPC classification number: G01N27/4145 , H01L21/28525 , H01L21/31111 , H01L21/32135 , H01L21/7684 , H01L21/76877 , H01L21/823437 , H01L21/823475 , H01L27/283
Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括具有感测栅极底部和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 微孔通过不同材料的多次蚀刻操作形成，包括牺牲塞，以暴露感测门而不产生等离子体的损伤。
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Patent Agency Ranking
公开(公告)号：US20130256259A1
公开(公告)日：2013-10-03
申请号：US13465928
申请日：2012-05-07
Applicant: Yi-Hsien CHANG , Chun-Ren CHENG , Yi-Shao LIU , Allen Timothy CHANG , Ching-Ray CHEN , Yeh-Tseng LI , Wen-Hsiang LIN
Inventor： Yi-Hsien CHANG , Chun-Ren CHENG , Yi-Shao LIU , Allen Timothy CHANG , Ching-Ray CHEN , Yeh-Tseng LI , Wen-Hsiang LIN
CPC classification number: B81C1/00349 , B81B2201/042 , B81C1/00111 , B81C1/00206 , B81C1/00214 , B82Y20/00 , G01N27/44791
Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.
Abstract translation: MEMS纳米结构的形成方法包括：衬底的一部分被凹入以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 光反射层沉积在衬底上，从而覆盖每个台面的顶表面和侧壁表面。 在光反射层上形成保护层。 在保护层上形成ARC层。 在每个台面上的ARC层上形成光致抗蚀剂层的开口。 通过开口去除ARC层，保护层和光反射层的一部分以暴露每个台面的顶表面。 去除每个台面的顶表面上的光致抗蚀剂层和ARC层。
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公开(公告)号：US08405169B2
公开(公告)日：2013-03-26
申请号：US12905358
申请日：2010-10-15
Applicant: Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
Inventor： Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
CPC classification number: B81C1/0038
Abstract: A device is provided which includes a transparent substrate. An opaque layer is disposed on the transparent substrate. A conductive layer disposed on the opaque layer. The opaque layer and the conductive layer form a handling layer, which may be used to detect and/or align the transparent wafer during fabrication processes. In an embodiment, the conductive layer includes a highly-doped silicon layer. In an embodiment, the opaque layer includes a metal. In embodiment, the device may include a MEMs device.
Abstract translation: 提供了一种包括透明基板的装置。 在透明基板上设置不透明层。 设置在不透明层上的导电层。 不透明层和导电层形成处理层，其可用于在制造工艺期间检测和/或对准透明晶片。 在一个实施例中，导电层包括高度掺杂的硅层。 在一个实施例中，不透明层包括金属。 在实施例中，设备可以包括MEMs设备。
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公开(公告)号：US20140054461A1
公开(公告)日：2014-02-27
申请号：US13595743
申请日：2012-08-27
Applicant: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
Inventor： Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
CPC classification number: G01J1/1626 , G01J1/4204 , G01J3/465 , H01L31/02164 , H01L31/103 , H01L31/105
Abstract: A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
Abstract translation: 光检测器包括第一光传感器和用于检测入射光的第二光传感器。 将Ge膜设置在第一光传感器上以通过红外（IR）波长的光并阻挡可见波长的光。 Ge膜不覆盖第二个光传感器。
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公开(公告)号：US20120091598A1
公开(公告)日：2012-04-19
申请号：US12905358
申请日：2010-10-15
Applicant: Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
Inventor： Chun-Ren Cheng , Yi-Hsien Chang , Allen Timothy Chang , Ching-Ray Chen , Li-Cheng Chu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao
IPC: H01L23/544 , H01L21/71
CPC classification number: B81C1/0038
Abstract: A device is provided which includes a transparent substrate. An opaque layer is disposed on the transparent substrate. A conductive layer disposed on the opaque layer. The opaque layer and the conductive layer form a handling layer, which may be used to detect and/or align the transparent wafer during fabrication processes. In an embodiment, the conductive layer includes a highly-doped silicon layer. In an embodiment, the opaque layer includes a metal. In embodiment, the device may include a MEMs device.
Abstract translation: 提供了一种包括透明基板的装置。 在透明基板上设置不透明层。 设置在不透明层上的导电层。 不透明层和导电层形成处理层，其可用于在制造工艺期间检测和/或对准透明晶片。 在一个实施例中，导电层包括高度掺杂的硅层。 在一个实施例中，不透明层包括金属。 在实施例中，设备可以包括MEMs设备。
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公开(公告)号：US08883021B2
公开(公告)日：2014-11-11
申请号：US13465928
申请日：2012-05-07
Applicant: Yi-Hsien Chang , Chun-Ren Cheng , Yi-Shao Liu , Allen Timothy Chang , Ching-Ray Chen , Yeh-Tseng Li , Wen-Hsiang Lin
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Yi-Shao Liu , Allen Timothy Chang , Ching-Ray Chen , Yeh-Tseng Li , Wen-Hsiang Lin
CPC classification number: B81C1/00349 , B81B2201/042 , B81C1/00111 , B81C1/00206 , B81C1/00214 , B82Y20/00 , G01N27/44791
Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.
Abstract translation: MEMS纳米结构的形成方法包括：衬底的一部分被凹入以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 光反射层沉积在衬底上，从而覆盖每个台面的顶表面和侧壁表面。 在光反射层上形成保护层。 在保护层上形成ARC层。 在每个台面上的ARC层上形成光致抗蚀剂层的开口。 通过开口去除ARC层，保护层和光反射层的一部分以暴露每个台面的顶表面。 去除每个台面的顶表面上的光致抗蚀剂层和ARC层。
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