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    CMOS compatible BioFET
    1.
    发明授权
    CMOS compatible BioFET 有权
    CMOS兼容的BioFET

    公开(公告)号：US09459234B2

    公开(公告)日：2016-10-04

    申请号：US13480161

    申请日：2012-05-24

    Applicant: Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

    Inventor： Alexander Kalnitsky ,  Yi-Shao Liu ,  Kai-Chih Liang ,  Chia-Hua Chu ,  Chun-Ren Cheng ,  Chun-Wen Cheng

    IPC: H01L51/05 ,  G01N27/414 ,  H01L51/00

    CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148 ,  H01L21/84 ,  H01L27/1203 ,  H01L51/0093

    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件可以包括衬底; 设置在基板的第一表面上的栅极结构和形成在基板的第二表面上的界面层。 界面层可以允许将受体置于界面层上以检测生物分子或生物实体的存在。

    Direct sensing bioFETs and methods of manufacture
    2.
    发明授权
    Direct sensing bioFETs and methods of manufacture 有权
    直接感应bioFET和制造方法

    公开(公告)号：US09091647B2

    公开(公告)日：2015-07-28

    申请号：US13607720

    申请日：2012-09-08

    Applicant: Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

    Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

    IPC: G01N27/00 ,  H01L21/00 ,  G01N27/414 ,  H01L27/28

    CPC classification number: G01N27/4145 ,  H01L21/28525 ,  H01L21/31111 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/283

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括具有感测栅极底部和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 微孔通过不同材料的多次蚀刻操作形成，包括牺牲塞，以暴露感测门而不产生等离子体的损伤。

    DIRECT SENSING BIOFETS AND METHODS OF MANUFACTURE
    4.
    发明申请
    DIRECT SENSING BIOFETS AND METHODS OF MANUFACTURE 有权
    直接感应生物体及其制造方法

    公开(公告)号：US20140073039A1

    公开(公告)日：2014-03-13

    申请号：US13607720

    申请日：2012-09-08

    Applicant: Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

    Inventor： Yi-Hsien Chang ,  Chun-Ren Cheng ,  Shih-Wei Lin ,  Yi-Shao Liu

    IPC: G01N27/414 ,  H01L21/8232 ,  C12M1/34

    CPC classification number: G01N27/4145 ,  H01L21/28525 ,  H01L21/31111 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/283

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括具有感测栅极底部和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 微孔通过不同材料的多次蚀刻操作形成，包括牺牲塞，以暴露感测门而不产生等离子体的损伤。

    MEMS NANOSTRUCTURES AND METHODS OF FORMING THE SAME
    5.
    发明申请
    MEMS NANOSTRUCTURES AND METHODS OF FORMING THE SAME 有权
    MEMS纳米结构及其形成方法

    公开(公告)号：US20130256259A1

    公开(公告)日：2013-10-03

    申请号：US13465928

    申请日：2012-05-07

    Applicant: Yi-Hsien CHANG ,  Chun-Ren CHENG ,  Yi-Shao LIU ,  Allen Timothy CHANG ,  Ching-Ray CHEN ,  Yeh-Tseng LI ,  Wen-Hsiang LIN

    Inventor： Yi-Hsien CHANG ,  Chun-Ren CHENG ,  Yi-Shao LIU ,  Allen Timothy CHANG ,  Ching-Ray CHEN ,  Yeh-Tseng LI ,  Wen-Hsiang LIN

    IPC: B44C1/22 ,  B05D3/04 ,  B05D5/06

    CPC classification number: B81C1/00349 ,  B81B2201/042 ,  B81C1/00111 ,  B81C1/00206 ,  B81C1/00214 ,  B82Y20/00 ,  G01N27/44791

    Abstract: A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

    Abstract translation: MEMS纳米结构的形成方法包括：衬底的一部分被凹入以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 光反射层沉积在衬底上，从而覆盖每个台面的顶表面和侧壁表面。 在光反射层上形成保护层。 在保护层上形成ARC层。 在每个台面上的ARC层上形成光致抗蚀剂层的开口。 通过开口去除ARC层，保护层和光反射层的一部分以暴露每个台面的顶表面。 去除每个台面的顶表面上的光致抗蚀剂层和ARC层。

    Triple-axis MEMS accelerometer having a bottom capacitor
    7.
    发明授权
    Triple-axis MEMS accelerometer having a bottom capacitor 有权
    具有底部电容器的三轴MEMS加速度计

    公开(公告)号：US08106470B2

    公开(公告)日：2012-01-31

    申请号：US12751633

    申请日：2010-03-31

    Applicant: Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

    Inventor： Ting-Hau Wu ,  Chun-Wen Cheng ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee ,  Allen Timothy Chang

    IPC: H01L21/32

    CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/082 ,  G01P2015/084 ,  H01L28/86

    Abstract: An integrated circuit structure includes a substrate having a top surface; a first conductive layer over and contacting the top surface of the substrate; a dielectric layer over and contacting the first conductive layer, wherein the dielectric layer includes an opening exposing a portion of the first conductive layer; and a proof-mass in the opening and including a second conductive layer at a bottom of the proof-mass. The second conductive layer is spaced apart from the portion of the first conductive layer by an air space. Springs anchor the proof-mass to portions of the dielectric layer encircling the opening. The springs are configured to allow the proof-mass to make three-dimensional movements.

    Abstract translation: 集成电路结构包括具有顶表面的基板; 在衬底的顶表面上方并接触第一导电层; 电介质层，其与所述第一导电层接触并接触，其中所述电介质层包括露出所述第一导电层的一部分的开口; 并且在开口中具有证明质量，并且包括在质量块的底部的第二导电层。 第二导电层通过空气间隔与第一导电层的部分间隔开。 弹簧将证明质量锚定到围绕开口的介电层的部分。 弹簧被配置为允许证明物质进行三维运动。

    Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same
    8.
    发明授权
    Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same 有权
    具有海绵状结构的低应力光敏树脂和使用其制造的装置

    公开(公告)号：US08053377B2

    公开(公告)日：2011-11-08

    申请号：US12892190

    申请日：2010-09-28

    Applicant: Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

    Inventor： Shang-Ying Tsai ,  Chun-Ren Cheng ,  Jiou-Kang Lee ,  Jung-Huei Peng ,  Ting-Hau Wu

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: B41J2/16 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B81B2201/052 ,  B81C1/00666 ,  B81C2201/017 ,  B81C2201/053

    Abstract: System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sacrificial material comprises (i) a polymer and (ii) a foaming agent or special function group. The structure can be formed by forming a trench in a substrate and filling the trench with a sacrificial material. The sacrificial material includes (i) a polymer and (ii) a foaming agent or special function group. After further process steps are completed, the sacrificial material is removed from the trench.

    Abstract translation: 用于形成包括MEMS器件结构的结构的系统和方法。 为了防止由牺牲材料（例如光致抗蚀剂）的固化过程引起的基板翘曲，以及随后的高温工艺步骤，改进的牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊的 功能组。 可以通过在衬底中形成沟槽并用牺牲材料填充沟槽来形成结构。 牺牲材料包括（i）聚​​合物和（ii）发泡剂或特殊功能组。 在完成进一步的工艺步骤之后，将牺牲材料从沟槽中移除。

    Metal-Ceramic Multilayer Structure
    9.
    发明申请
    Metal-Ceramic Multilayer Structure 有权
    金属陶瓷多层结构

    公开(公告)号：US20100258883A1

    公开(公告)日：2010-10-14

    申请号：US12692118

    申请日：2010-01-22

    Applicant: Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

    Inventor： Ting-Hau Wu ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Jung-Huei Peng ,  Jiou-Kang Lee

    IPC: H01L29/84 ,  H01L23/52

    CPC classification number: B81C1/00095 ,  B81B2203/0384

    Abstract: A metal-ceramic multilayer structure is provided. The underlying layers of the metal/ceramic multilayer structure have sloped sidewalls such that cracking of the metal-ceramic multilayer structure may be reduced or eliminated. In an embodiment, a layer immediately underlying the metal-ceramic multilayer has sidewalls sloped less than 75 degrees. Subsequent layers underlying the layer immediately underlying the metal/ceramic layer have sidewalls sloped greater than 75 degrees. In this manner, less stress is applied to the overlying metal/ceramic layer, particularly in the corners, thereby reducing the cracking of the metal-ceramic multilayer. The metal/ceramic multilayer structure includes one or more alternating layers of a metal seed layer and a ceramic layer.

    Abstract translation: 提供了一种金属陶瓷多层结构。 金属/陶瓷多层结构的下层具有倾斜的侧壁，从而可以减少或消除金属 - 陶瓷多层结构的开裂。 在一个实施例中，紧邻金属陶瓷多层的底层的侧壁倾斜小于75度。 紧邻金属/陶瓷层下面的层下面的后续层具有倾斜大于75度的侧壁。 以这种方式，对上覆的金属/陶瓷层，特别是在角部施加较小的应力，从而减少金属 - 陶瓷多层的开裂。 金属/陶瓷多层结构包括金属种子层和陶瓷层的一个或多个交替层。

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