Invention Application
- Patent Title: LIGHT DETECTOR WITH GE FILM
- Patent Title (中): 光电探测器
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Application No.: US13595743Application Date: 2012-08-27
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Publication No.: US20140054461A1Publication Date: 2014-02-27
- Inventor: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- Applicant: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G01J1/44
- IPC: G01J1/44 ; G01J5/20 ; H01L31/18 ; G01J5/00
Abstract:
A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
Public/Granted literature
- US08723123B2 Light detector with Ge film Public/Granted day:2014-05-13
Information query
