公开(公告)号：US08339750B2

公开(公告)日：2012-12-25

申请号：US12471909

申请日：2009-05-26

Applicant: Tomoyuki Sasaki

Inventor： Tomoyuki Sasaki

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G01R33/098 ,  G11B5/398

Abstract: A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, and an electrically insulating layer disposed between the lower second magnetic shield layer and the nonmagnetic conductive layer, while the lower first magnetic shield layer is arranged closer to the nonmagnetic conductive layer than is the lower second magnetic shield layer.

Abstract translation: 磁传感器包括非磁性导电层，设置在非磁性导电层的第一部分上的自由磁化层，设置在不同于第一部分的非磁性导电层的第二部分上的固定磁化层，上部和下部第一磁屏蔽 通过非磁性导电层和介于其间的自由磁化层彼此相对的层，通过非磁性导电层和介于其间的固定磁化层彼此相对的上下第二磁屏蔽层和设置在下第二磁屏蔽之间的电绝缘层 层和非磁性导电层，而下部第一磁屏蔽层比下部第二磁屏蔽层更靠近非磁性导电层布置。

公开(公告)号：US20120181643A1

公开(公告)日：2012-07-19

申请号：US13351632

申请日：2012-01-17

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  H01F10/3254

Abstract: The spin transport device includes a semiconductor layer; a first ferromagnetic layer provided on the semiconductor layer via a first tunnel barrier layer; a second ferromagnetic layer provided on the semiconductor layer via a second tunnel barrier layer so as to be divided from the first ferromagnetic layer; and a first wire which generates, upon application of an electric current, a magnetic field in a region between the first ferromagnetic layer and the second ferromagnetic layer in the semiconductor layer.

Abstract translation: 自旋传输装置包括半导体层; 经由第一隧道势垒层设置在所述半导体层上的第一铁磁层; 第二铁磁层，其经由第二隧道势垒层设置在所述半导体层上，以从所述第一铁磁层分割; 以及第一线，其在施加电流时在半导体层中的第一铁磁层和第二铁磁层之间的区域中产生磁场。

公开(公告)号：US20120038355A1

公开(公告)日：2012-02-16

申请号：US13175382

申请日：2011-07-01

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: G01R33/02

CPC classification number: G01R33/1284 ,  G11C11/16

Abstract: A magnetic sensor is provided with a channel of a semiconductor, a first insulating film and a metal body arranged opposite to each other with the channel in between, a ferromagnet provided on the first insulating film, a first reference electrode connected to the metal body, a second reference electrode connected to the metal body, a magnetic shield covering a portion opposed to the ferromagnet in the channel, and a second insulating film provided between the channel and the magnetic shield. The magnetic shield has a through hole extending toward the portion opposed to the ferromagnet in the channel.

Abstract translation: 磁传感器设置有沟道，半导体通道，第一绝缘膜和金属体，第一绝缘膜和金属体之间具有通道相互布置，设置在第一绝缘膜上的铁磁体，连接到金属体的第一参考电极， 连接到金属体的第二参考电极，覆盖与通道中的铁磁体相对的部分的磁屏蔽，以及设置在通道和磁屏蔽之间的第二绝缘膜。 磁屏蔽件具有向通道中与铁磁体相对的部分延伸的通孔。

公开(公告)号：US20100314702A1

公开(公告)日：2010-12-16

申请号：US12796034

申请日：2010-06-08

Applicant: Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

Inventor： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.

Abstract translation: 提供自旋传输装置，其包括由半导体材料构成的通道，经由第一绝缘层布置在通道上的磁化固定层，经由第二绝缘层布置在通道上的无磁化层，以及第一和第二电极 布置在通道上，其中通道的第一区域的载流子密度包括与第一绝缘层的接触表面，通道的第二区域包括与第二绝缘层的接触表面，通道的第三区域包括相对的 并且包括与第二电极相反的表面的沟道的第四区域高于整个通道的平均载流子密度。 因此，可以提供能够在抑制旋转散射的同时实现良好的自旋运输和电阻特性的自旋输送装置。

公开(公告)号：US20100007995A1

公开(公告)日：2010-01-14

申请号：US12471804

申请日：2009-05-26

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/127

CPC classification number: G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/127 ,  G11B5/3912 ,  G11B2005/3996

Abstract: A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, a first electrically insulating layer disposed between the lower second magnetic shield layer and nonmagnetic conductive layer, and a first electrode layer for electrically connecting the lower second magnetic shield layer and nonmagnetic conductive layer to each other, while the fixed magnetization layer and first electrode layer oppose each other through the nonmagnetic conductive layer.

Abstract translation: 磁传感器包括非磁性导电层，设置在非磁性导电层的第一部分上的自由磁化层，设置在不同于第一部分的非磁性导电层的第二部分上的固定磁化层，上部和下部第一磁屏蔽 通过非磁性导电层和介于其间的自由磁化层彼此相对的层，通过非磁性导电层和介于其间的固定磁化层彼此相对的上下第二磁屏蔽层，设置在下第二磁屏蔽之间的第一电绝缘层 层和非磁性导电层，以及第一电极层，用于将下部第二磁屏蔽层和非磁性导电层彼此电连接，同时固定磁化层和第一电极层通过非磁性导电层彼此相对。

公开(公告)号：US20090323230A1

公开(公告)日：2009-12-31

申请号：US12471995

申请日：2009-05-26

Applicant: Tomoyuki SASAKI

Inventor： Tomoyuki SASAKI

IPC: G11B5/127

CPC classification number: G01R33/1284 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398

Abstract: A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer.

Abstract translation: 磁传感器包括支撑件; 设置在所述支撑体上的非磁性导电层; 固定磁化层，设置在非磁性导电层的第一部分和支撑体上; 设置在不同于第一部分和支撑件上的非磁性导电层的第二部分上的自由磁化层; 和非磁性低电阻层，其设置在与所述固定磁化层和自由磁化层中的至少一个中的所述非磁性导电层重叠的部分上，其电阻率低于所述一层的电阻率。

公开(公告)号：US20080180840A1

公开(公告)日：2008-07-31

申请号：US11668820

申请日：2007-01-30

Applicant: Hideyuki Yatsu ,  Akifumi Kamijima ,  Hitoshi Hatate ,  Tomoyuki Sasaki

Inventor： Hideyuki Yatsu ,  Akifumi Kamijima ,  Hitoshi Hatate ,  Tomoyuki Sasaki

IPC: G11B5/147 ,  G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/3116

Abstract: There is a thin-film magnetic head provided, which comprises a perpendicular recording head portion including a thin-film coil adapted to generate a magnetic flux, and a main magnetic pole layer that extends rearward from a recording medium opposite plane facing a recording medium and has a main magnetic pole adapted to release a magnetic flux produced at the thin-film coil toward the recording medium. A given concave groove form that is more constricted as the lower end draws nearer is provided at or near the flare point of the front end of the main magnetic pole, so that the flow of the magnetic flux through the main magnetic pole is focused on the upper end edge (gap portion), thereby improving overwrite performance and holding back the occurrence of pole erasure.

Abstract translation: 提供了一种薄膜磁头，其包括垂直记录头部分，该垂直记录头部分包括适于产生磁通量的薄膜线圈，以及从与记录介质相对的记录介质向后延伸的主磁极层，以及 具有适于将在薄膜线圈处产生的磁通朝向记录介质释放的主磁极。 在主磁极的前端的喇叭口处或附近设置由于下端越靠近而更加收缩的给定的凹槽形状，使得通过主磁极的磁通量的流动聚焦在 上边缘（间隙部分），从而提高覆盖性能并阻止磁极擦除的发生。

公开(公告)号：US06960531B2

公开(公告)日：2005-11-01

申请号：US10819968

申请日：2004-04-08

Applicant: Tomoyuki Sasaki ,  Takao Yamaguchi ,  Hideo Nikoh

Inventor： Tomoyuki Sasaki ,  Takao Yamaguchi ,  Hideo Nikoh

IPC: H01L21/28 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302 ,  B08B6/00 ,  H01L21/461

CPC classification number: H01L21/0206 ,  H01L21/02063 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76838

Abstract: After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.

Abstract translation: 在下层形成绝缘膜之后，在绝缘膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模来蚀刻绝缘膜，由此形成绝缘膜图案。 在不去除抗蚀剂图案的情况下，对下面的层和绝缘膜图案的暴露部分进行等离子体处理，清洁，热处理等，从而可以去除在形成绝缘膜图案期间生长的沉积。 此后，使用至少绝缘膜图案作为掩模来蚀刻下层。 结果，即使采用严格的图案规则，也可以防止在蚀刻多层膜时引起图案缺陷。

公开(公告)号：US06750149B2

公开(公告)日：2004-06-15

申请号：US10043257

申请日：2002-01-14

Applicant: Tomoyuki Sasaki ,  Takao Yamaguchi ,  Hideo Nikoh

Inventor： Tomoyuki Sasaki ,  Takao Yamaguchi ,  Hideo Nikoh

IPC: H01L21302

CPC classification number: H01L21/0206 ,  H01L21/02063 ,  H01L21/28123 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76838

Abstract: After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.

Abstract translation: 在下层形成绝缘膜之后，在绝缘膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模来蚀刻绝缘膜，由此形成绝缘膜图案。 在不去除抗蚀剂图案的情况下，对下面的层和绝缘膜图案的暴露部分进行等离子体处理，清洁，热处理等，从而可以去除在形成绝缘膜图案期间生长的沉积。 此后，使用至少绝缘膜图案作为掩模来蚀刻下层。 结果，即使采用严格的图案规则，也可以防止在蚀刻多层膜时引起图案缺陷。

公开(公告)号：US5060073A

公开(公告)日：1991-10-22

申请号：US509328

申请日：1990-04-16

Applicant: Shinichi Yamaguchi ,  Tomoyuki Sasaki

Inventor： Shinichi Yamaguchi ,  Tomoyuki Sasaki

IPC: H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/351 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3722 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/217 ,  H04N5/2173

Abstract: The solid-state image device includes a compensating device for differences in the voltage level of the data representing the first and the second field images which consist of one picture image. The compensating device outputs one field image data without change and amplifies the remaining field image data according to the differences in the voltage level of the data of the first and second field.

Abstract translation: 固态图像装置包括用于表示由一个图像图像组成的第一和第二场图像的数据的电压电平差异的补偿装置。 补偿装置不改变地输出一个场图像数据，并且根据第一场和第二场数据的电压电平的差异来放大剩余的场图像数据。