公开(公告)号：US20120211848A1

公开(公告)日：2012-08-23

申请号：US13396062

申请日：2012-02-14

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

IPC: H01L43/02

CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: The magnetic sensor includes a base substrate having a magnetic shield layer; a single-domain semiconductor crystal layer attached via an insulating film on the magnetic shield layer of the base substrate; a first ferromagnetic layer formed on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a first tunnel barrier layer; and a second ferromagnetic layer formed, at a distance from the first ferromagnetic layer, on top of the semiconductor crystal layer on the opposite side of the semiconductor crystal layer to the insulating film, via a second tunnel barrier layer.

Abstract translation: 磁传感器包括具有磁屏蔽层的基底基板; 通过绝缘膜附着在基底基板的磁屏蔽层上的单畴半导体晶体层; 经由第一隧道势垒层在所述半导体晶体层的与所述绝缘膜相对的所述半导体晶体层的顶部上形成的第一铁磁层; 以及第二铁磁层，其经由第二隧道势垒层与半导体晶体层的与绝缘膜相隔一定距离的第一铁磁层一定距离形成。

公开(公告)号：US20120074510A1

公开(公告)日：2012-03-29

申请号：US13227135

申请日：2011-09-07

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L29/82

CPC classification number: H01L43/10 ,  G01R33/093 ,  G11B5/332 ,  H01L43/08

Abstract: A magnetic sensor 1 comprises a main channel layer 7a having first, second, and third regions 71, 72, 73 and extending in a first direction; a first ferromagnetic layer 12A mounted on the first region 71; a second ferromagnetic layer 12B mounted on the second region 72; a projection channel layer 7b projecting in a direction perpendicular to a thickness direction of the main channel layer 7a from a side face of the third region 73 between the first and second regions 71, 72 in the main channel layer 7a; and a magnetic shield S covering both sides in the thickness direction of the projection channel layer 7b and both sides in the first direction of the projection channel layer 7b and exposing an end face 7c in the projecting direction of the projection channel layer 7b.

Abstract translation: 磁传感器1包括具有第一，第二和第三区域71,72,73并沿第一方向延伸的主通道层7a; 安装在第一区域71上的第一铁磁层12A; 安装在第二区域72上的第二铁磁层12B; 在主沟道层7a中的第一和第二区域71,72之间从第三区域73的侧面垂直于主沟道层7a的厚度方向的方向突出的投影通道层7b; 以及覆盖投影通道层7b的厚度方向的两侧和投影通道层7b的第一方向上的两侧的磁屏蔽S，并且在投影通道层7b的突出方向上露出端面7c。

公开(公告)号：US20120267734A1

公开(公告)日：2012-10-25

申请号：US13445476

申请日：2012-04-12

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  H01L29/0657 ,  H01L29/82

Abstract: A spin transport device includes a semiconductor layer 3, a first ferromagnetic layer 1 provided on the semiconductor layer 3 via a first tunnel barrier layer 5A, and a second ferromagnetic layer 2 provided on the semiconductor layer 3 via a second tunnel barrier layer 5B to be spaced from the first ferromagnetic layer 1, and the semiconductor layer 3 includes a first region RI broadening in a direction away from the first ferromagnetic layer 1 along a direction orthogonal to a thickness direction from the first ferromagnetic layer 1, and a second region R12 extending in a direction toward the second ferromagnetic layer 2 along the direction orthogonal to the thickness direction from the first ferromagnetic layer 1. The second region R12 has a relatively higher impurity concentration than the first region R1.

Abstract translation: 自旋传输装置包括半导体层3，经由第一隧道势垒层5A设置在半导体层3上的第一铁磁层1和经由第二隧道势垒层5B设置在半导体层3上的第二铁磁层2 与第一铁磁层1间隔开，并且半导体层3包括沿着与第一铁磁层1的厚度方向正交的方向在远离第一铁磁层1的方向上变宽的第一区域RI，以及第二区域R12延伸 沿着与第一铁磁层1的厚度方向正交的方向朝向第二铁磁层2的方向。第二区域R12具有比第一区域R1更高的杂质浓度。

公开(公告)号：US20120038355A1

公开(公告)日：2012-02-16

申请号：US13175382

申请日：2011-07-01

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: G01R33/02

CPC classification number: G01R33/1284 ,  G11C11/16

Abstract: A magnetic sensor is provided with a channel of a semiconductor, a first insulating film and a metal body arranged opposite to each other with the channel in between, a ferromagnet provided on the first insulating film, a first reference electrode connected to the metal body, a second reference electrode connected to the metal body, a magnetic shield covering a portion opposed to the ferromagnet in the channel, and a second insulating film provided between the channel and the magnetic shield. The magnetic shield has a through hole extending toward the portion opposed to the ferromagnet in the channel.

Abstract translation: 磁传感器设置有沟道，半导体通道，第一绝缘膜和金属体，第一绝缘膜和金属体之间具有通道相互布置，设置在第一绝缘膜上的铁磁体，连接到金属体的第一参考电极， 连接到金属体的第二参考电极，覆盖与通道中的铁磁体相对的部分的磁屏蔽，以及设置在通道和磁屏蔽之间的第二绝缘膜。 磁屏蔽件具有向通道中与铁磁体相对的部分延伸的通孔。

公开(公告)号：US20100314702A1

公开(公告)日：2010-12-16

申请号：US12796034

申请日：2010-06-08

Applicant: Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

Inventor： Tomoyuki SASAKI ,  Tohru Oikawa ,  Katsumichi Tagami ,  Masaki Kubota

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A spin transport device is provided, which includes a channel comprised of a semiconductor material, a magnetization fixed layer arranged on the channel via a first insulating layer, a magnetization free layer arranged on the channel via a second insulating layer, and first and second electrodes arranged on the channel, wherein carrier densities of a first region of the channel including a contact surface with the first insulating layer, a second region of the channel including a contact surface with the second insulating layer, a third region of the channel including an opposite surface to the first electrode, and a fourth region of the channel including an opposite surface to the second electrode are higher than an average carrier density of the whole channel. Accordingly, a spin transport device that can realize good spin transportation and electric resistance characteristics while suppressing the scattering of spin can be provided.

Abstract translation: 提供自旋传输装置，其包括由半导体材料构成的通道，经由第一绝缘层布置在通道上的磁化固定层，经由第二绝缘层布置在通道上的无磁化层，以及第一和第二电极 布置在通道上，其中通道的第一区域的载流子密度包括与第一绝缘层的接触表面，通道的第二区域包括与第二绝缘层的接触表面，通道的第三区域包括相对的 并且包括与第二电极相反的表面的沟道的第四区域高于整个通道的平均载流子密度。 因此，可以提供能够在抑制旋转散射的同时实现良好的自旋运输和电阻特性的自旋输送装置。

公开(公告)号：US20110204886A1

公开(公告)日：2011-08-25

申请号：US13017707

申请日：2011-01-31

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

IPC: G01R33/02 ,  G11B5/23

CPC classification number: G01R33/1284 ,  B82Y25/00 ,  G01R33/093

Abstract: A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.

Abstract translation: 磁传感器包括第一铁磁体，第二铁磁体，从第一铁磁体延伸到第二铁磁体的通道，覆盖通道的磁屏蔽以及设置在通道和磁屏蔽之间的绝缘膜，而 磁屏蔽件具有朝向通道延伸的通孔。

公开(公告)号：US20120241883A1

公开(公告)日：2012-09-27

申请号：US13409844

申请日：2012-03-01

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Yoshihiro TSUCHIYA

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Yoshihiro TSUCHIYA

IPC: H01L43/02

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor 1) comprises a channel layer 10 constituted by a semiconductor, ferromagnetic layers 20A, 20B formed on the channel layer 10, and tunneling layers 22A, 22B formed so as to be interposed between the channel layer 10 and ferromagnetic layers 20A, 20B, while the tunneling layers 22A, 22B are constituted by a material substituting a part of Mg in MgO with Zn. As a result of studies, the inventors observed a decrease in areal resistance in a tunnel material having substituted a part of Mg in MgO with Zn. Therefore, the tunneling layers 22A, 22B can lower their areal resistance when constructed by a material having substituted a part of Mg in MgO with Zn.

Abstract translation: 本发明提供一种其隧道层和磁头具有降低的面积电阻的自旋传输装置。 自旋传输装置（磁传感器1）包括由半导体构成的沟道层10，形成在沟道层10上的铁磁层20A，20B，以及形成为介于沟道层10和铁磁层之间的隧道层22A，22B 层20A，20B，而隧道层22A，22B由用MgO代替MgO中的一部分Mg的材料构成。 作为研究的结果，本发明人观察到在用MgO取代MgO中的一部分Mg的隧道材料中的面电阻降低。 因此，隧道层22A，22B可以通过用MgO取代MgO中的一部分Mg的材料构成，从而降低它们的面积电阻。

公开(公告)号：US20120228683A1

公开(公告)日：2012-09-13

申请号：US13416574

申请日：2012-03-09

Applicant: Tohru OIKAWA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA ,  Kiyoshi NOGUCHI

Inventor： Tohru OIKAWA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA ,  Kiyoshi NOGUCHI

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  H01F10/3254 ,  H01F10/329

Abstract: This spin device includes a semiconductor layer 3 formed of single crystalline Si, a first tunnel insulating layer T1 formed on a surface of the semiconductor layer 3, and a first ferromagnetic metal layer 1 formed on the first tunnel insulating layer T1. Area density of dangling bonds in an interface between the semiconductor layer 3 and the first tunnel insulating layer T1 is 3×1014/cm2 or less. In this case, a polarization rate can be greatly improved.

Abstract translation: 该自旋装置包括由单晶Si形成的半导体层3，形成在半导体层3的表面上的第一隧道绝缘层T1和形成在第一隧道绝缘层T1上的第一铁磁金属层1。 半导体层3与第一隧道绝缘层T1的界面中的悬挂键的面积密度为3×10 14 / cm 2以下。 在这种情况下，可极大地提高极化率。

公开(公告)号：US20120056254A1

公开(公告)日：2012-03-08

申请号：US13216965

申请日：2011-08-24

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI ,  Toshio SUZUKI

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI ,  Toshio SUZUKI

IPC: H01L29/82

CPC classification number: H01L29/66984 ,  G11C11/161 ,  G11C11/1675 ,  H01L29/82

Abstract: The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.

Abstract translation: 本发明提供一种自旋注入电极结构，自旋传输元件和自旋传输器件，其能够在室温下在硅沟道层中有效地自旋注入。 自旋注入电极结构IE包括硅沟道层12，设置在硅沟道层12的第一部分上的第一氧化镁膜13A和设置在第一氧化镁膜13A上的第一铁磁层14A。 第一氧化镁膜13A部分地包括与硅沟道层12和第一铁磁层14A两者晶格匹配的第一晶格匹配部分P.

公开(公告)号：US20110205666A1

公开(公告)日：2011-08-25

申请号：US13017935

申请日：2011-01-31

Applicant: Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

Inventor： Tomoyuki SASAKI ,  Tohru OIKAWA ,  Kiyoshi NOGUCHI

IPC: G11B5/127 ,  G01R33/02

CPC classification number: G01R33/1284 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A magnetic sensor comprises a channel, a ferromagnetic body and first and second reference electrodes on the channel, a magnetic shield covering a part of the channel opposing the ferromagnetic body, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the part of the channel opposing the ferromagnetic body.

Abstract translation: 磁传感器包括通道，铁磁体和通道上的第一和第二参考电极，覆盖与铁磁体相对的通道的一部分的磁屏蔽以及设置在通道和磁屏蔽之间的绝缘膜，而磁性传感器 屏蔽件具有朝向与铁磁体相对的通道的部分延伸的通孔。