Invention Application
US20120228683A1 SPIN DEVICE, AND MAGNETIC SENSOR AND SPIN FET USING THE SAME
审中-公开
旋转装置，以及使用其的磁性传感器和旋转FET
- Patent Title: SPIN DEVICE, AND MAGNETIC SENSOR AND SPIN FET USING THE SAME
- Patent Title (中): 旋转装置，以及使用其的磁性传感器和旋转FET
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Application No.: US13416574Application Date: 2012-03-09
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Publication No.: US20120228683A1Publication Date: 2012-09-13
- Inventor: Tohru OIKAWA , Tomoyuki SASAKI , Yoshitomo TANAKA , Kiyoshi NOGUCHI
- Applicant: Tohru OIKAWA , Tomoyuki SASAKI , Yoshitomo TANAKA , Kiyoshi NOGUCHI
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2011-054564 20110311
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
This spin device includes a semiconductor layer 3 formed of single crystalline Si, a first tunnel insulating layer T1 formed on a surface of the semiconductor layer 3, and a first ferromagnetic metal layer 1 formed on the first tunnel insulating layer T1. Area density of dangling bonds in an interface between the semiconductor layer 3 and the first tunnel insulating layer T1 is 3×1014/cm2 or less. In this case, a polarization rate can be greatly improved.
Information query
IPC分类:
