Thin-film deposition method
    2.
    发明授权
    Thin-film deposition method 失效
    薄膜沉积法

    公开(公告)号:US06933009B2

    公开(公告)日:2005-08-23

    申请号:US10428849

    申请日:2003-05-05

    摘要: In a thin-film deposition method, a substrate is placed in a heat chamber having a pressure equal to or higher than an atmospheric pressure, and the substrate is heated in the heat chamber by supplying gas having a temperature higher than a room temperature by forced convection. The heated substrate is transferred from the heat chamber into a deposition chamber which is a vacuum chamber connected to the heat chamber directly or indirectly with a valve interposed therebetween. Then, a thin-film deposition is carried out on the substrate in the deposition chamber at a deposition temperature higher than the room temperature.

    摘要翻译: 在薄膜沉积方法中,将基板放置在等于或大于大气压力的加热室中,并且通过强制地供给具有高于室温的气体在加热室中加热基板 对流。 加热的基板从加热室转移到沉积室,该沉积室是直接或间接地连接到加热室的真空室,其间插入阀。 然后,在高于室温的沉积温度下,在沉积室中的基板上进行薄膜沉积。

    Internal electrode type plasma processing apparatus and plasma processing method
    7.
    发明授权
    Internal electrode type plasma processing apparatus and plasma processing method 有权
    内部电极型等离子体处理装置和等离子体处理方法

    公开(公告)号:US06719876B1

    公开(公告)日:2004-04-13

    申请号:US09830879

    申请日:2001-05-02

    IPC分类号: H05H100

    摘要: A plasma processing apparatus is of an internal electrode type, and an inductive coupling type electrode arranged facing a substrate has a shape formed by bending back a conductor at its central portion. A high frequency power is supplied to an end of the electrode so that a standing wave of half wavelength are produced at straight portions formed by bending back the electrode to make an antinode there and thus a plasma discharge is generated around the electrode. The controlled standing waves with its antinodes positively generated at the straight portions of the electrode are effectively used.

    摘要翻译: 等离子体处理装置是内部电极型,并且面向基板布置的电感耦合型电极具有通过在其中心部分弯曲导体而形成的形状。 向电极的端部供给高频电力,使得通过使电极弯曲而形成的直线部分产生半波长的驻波,从而在那里形成波腹,从而在电极周围产生等离子体放电。 有效地使用在电极的直线部分积极产生其波腹的受控驻波。

    Microcrystalline Silicon Film Forming Method and Solar Cell
    9.
    发明申请
    Microcrystalline Silicon Film Forming Method and Solar Cell 审中-公开
    微晶硅薄膜成型方法和太阳能电池

    公开(公告)号:US20090314349A1

    公开(公告)日:2009-12-24

    申请号:US12295250

    申请日:2007-03-29

    IPC分类号: H01L31/036 H01L29/04

    摘要: Object of this invention is to provide a plasma CVD method capable of forming a microcrystalline silicon film at low hydrogen gas flow rate, thereby providing a low-cost microcrystalline silicon solar cell.In the plasma CVD method forming the microcrystalline silicon film, plural antennas are arranged to form an antenna array structure in a vacuum chamber. One end of each antenna is connected to a high frequency power source and anther end is grounded. Substrates are placed facing the antenna arrays, and the substrate temperature is kept between 150 and 250° C. Plasma is generated by introducing gas mixture of hydrogen and silane to the chamber, and by introducing high frequency power to the antennas. When hydrogen/silane gas flow ratio is controlled in the range from 1 to 10, microcrystalline silicon films are formed on the substrates with the ratio Ic/Ia between 2 and 6, whereas Ic and Ia are the Raman scattering intensity at around 520 cm−1 and at around 480 cm−1, related to crystalline silicon and amorphous silicon, respectively

    摘要翻译: 本发明的目的是提供能够以低氢气流速形成微晶硅膜的等离子体CVD方法,从而提供低成本的微晶硅太阳能电池。 在形成微晶硅膜的等离子体CVD法中,布置多个天线以在真空室中形成天线阵列结构。 每个天线的一端连接到高频电源,另一端接地。 衬底被放置成面向天线阵列,并且衬底温度保持在150和250℃之间。通过将氢气和硅烷的气体混合物引入腔室并通过向天线引入高频功率来产生等离子体。 当氢/硅烷气体流量比控制在1到10的范围内时,微晶硅膜以2/6的比例Ic / Ia形成在基片上,而Ic和Ia是在520cm -1处的拉曼散射强度, 1和约480cm -1,分别与晶体硅和非晶硅相关