公开(公告)号：US20090314349A1

公开(公告)日：2009-12-24

申请号：US12295250

申请日：2007-03-29

Applicant: Masashi Ueda ,  Tomoko Takagi ,  Norikazu Itou

Inventor： Masashi Ueda ,  Tomoko Takagi ,  Norikazu Itou

IPC: H01L31/036 ,  H01L29/04

CPC classification number: C23C16/24 ,  C23C16/509 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02P70/521

Abstract: Object of this invention is to provide a plasma CVD method capable of forming a microcrystalline silicon film at low hydrogen gas flow rate, thereby providing a low-cost microcrystalline silicon solar cell.In the plasma CVD method forming the microcrystalline silicon film, plural antennas are arranged to form an antenna array structure in a vacuum chamber. One end of each antenna is connected to a high frequency power source and anther end is grounded. Substrates are placed facing the antenna arrays, and the substrate temperature is kept between 150 and 250° C. Plasma is generated by introducing gas mixture of hydrogen and silane to the chamber, and by introducing high frequency power to the antennas. When hydrogen/silane gas flow ratio is controlled in the range from 1 to 10, microcrystalline silicon films are formed on the substrates with the ratio Ic/Ia between 2 and 6, whereas Ic and Ia are the Raman scattering intensity at around 520 cm−1 and at around 480 cm−1, related to crystalline silicon and amorphous silicon, respectively

Abstract translation: 本发明的目的是提供能够以低氢气流速形成微晶硅膜的等离子体CVD方法，从而提供低成本的微晶硅太阳能电池。 在形成微晶硅膜的等离子体CVD法中，布置多个天线以在真空室中形成天线阵列结构。 每个天线的一端连接到高频电源，另一端接地。 衬底被放置成面向天线阵列，并且衬底温度保持在150和250℃之间。通过将氢气和硅烷的气体混合物引入腔室并通过向天线引入高频功率来产生等离子体。 当氢/硅烷气体流量比控制在1到10的范围内时，微晶硅膜以2/6的比例Ic / Ia形成在基片上，而Ic和Ia是在520cm -1处的拉曼散射强度， 1和约480cm -1，分别与晶体硅和非晶硅相关