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1.发明授权Process for forming thin film metal oxide materials having improved electrical properties 失效用于形成具有改善的电性能的薄膜金属氧化物材料的方法
公开(公告)号：US5908658A
公开(公告)日：1999-06-01
申请号：US897137
申请日：1997-07-22
IPC分类号： H01L21/02 , H01L21/316 , B05D5/12
CPC分类号： H01L21/31604 , H01L28/40
摘要： A process is provided for preparing mixed metal oxide materials having improved leakage characteristics when formed into a capacitor. The process comprises: (a) preparing a solution of a liquid precursor of the mixed metal oxide materials having a given composition in a water-immiscible solvent; (b) adding a small amount of water to the solution to form a two-phase mixture; (c) refluxing the two-phase mixture for a period of time; and (d) removing the water. Optionally, an additional amount of the water-immiscible solvent may be added prior to removing the water. In this case, both the added amount of the water-immiscible solvent and the water are removed simultaneously. The treated metal organic acid salt solutions provide ceramic thin films having improved leakage characteristics as compared to the prior art thin films prepared from untreated prior art solutions.
摘要翻译： 提供一种制备在形成电容器时具有改善的泄漏特性的混合金属氧化物材料的方法。 该方法包括：（a）将具有给定组成的混合金属氧化物材料的液体前体溶液在水不混溶溶剂中制备; （b）向溶液中加入少量水以形成两相混合物; （c）将两相混合物回流一段时间; 和（d）去除水。 任选地，可以在除去水之前加入另外量的与水不混溶的溶剂。 在这种情况下，同时除去水不混溶溶剂和水的添加量。 经处理的金属有机酸盐溶液提供与由未处理的现有技术溶液制备的现有技术薄膜相比具有改进的泄漏特性的陶瓷薄膜。
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公开(公告)号：US5885648A
公开(公告)日：1999-03-23
申请号：US863117
申请日：1997-05-27
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , B05D3/02
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： Oxide materials having a composition described by the formula SrBi.sub.2.00- Ta.sub.2.00-x Nb.sub.x O.sub.9, where x ranges from 0.00 to 2.00 and is controlled to within about 1%, are provided having improved high temperature performance. A batch of the desired composition is initially prepared by conventional processes to provide a nominal composition that may be close to the desired composition, but not the exact desired composition. A portion of the batch is processed to form a thin film, the stoichiometry of which is then analyzed. The batch composition is then modified by adding thereto a quantity of one or more of the constituents to bring the batch composition to the desired stoichiometry. Further improved high temperature performance is achieved with values of x within the range of about 0.10 to 1.9, and more preferably, about 0.4 to 0.7, and most preferably about 0.56. The thus-modified metal organic acid salt solutions provide ceramic thin films having improved electrical properties (particularly consistent properties from batch-to-batch, improved ferroelectric remnant polarization, and much improved high temperature performance) as compared to the thin films prepared from unmodified solutions. The present invention provides for new materials, particularly new niobium-substituted, bismuth-layered structured materials and a process to make these materials on a consistent batch-to-batch basis.
摘要翻译： 具有由式SrBi2.00-Ta2.00-xNbxO9描述的组成的氧化物材料，其中x为0.00-2.00，控制在约1％内，具有改进的高温性能。 最初通过常规方法制备一批所需组合物以提供可接近所需组合物的标称组成，但不是精确的所需组成。 处理批料的一部分以形成薄膜，然后分析其化学计量。 然后通过向其中加入一定量的一种或多种组分来使批料组合物达到所需的化学计量来修饰批料组合物。 在x值在约0.10至1.9范围内，更优选约0.4至0.7，最优选约0.56的范围内实现进一步提高的高温性能。 与由未改性的溶液制备的薄膜相比，由此改性的金属有机酸盐溶液提供了具有改善的电性能（特别是分批批次的性能，改善的铁电残余极化以及大大提高的高温性能）的陶瓷薄膜 。 本发明提供了新的材料，特别是新的铌取代的铋层状结构材料，以及使这些材料以一批一批的方式制备的方法。
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公开(公告)号：US5643505A
公开(公告)日：1997-07-01
申请号：US511670
申请日：1995-08-07
IPC分类号： C03C3/12 , C01G9/08 , C01G15/00 , C03B8/00 , C03C3/32 , C03C4/10 , C04B35/547 , G02B1/02 , G02B5/20 , B29D11/00 , B05B5/00 , B05D5/06
CPC分类号： C01G15/006 , C01G9/08 , G02B1/02 , G02B5/208
摘要： Low cost broadband infrared windows are fabricated using a near net shape process which greatly reduces the cost of machining and grinding window materials. The fabrication of zinc sulfide (ZnS) IR windows uses ceramic powder processing to avoid the expensive prior art chemical vapor deposition method. Further, the invention involves a means of hardening and strengthening ZnS as part of the powder process, with IR transmission performance comparable to undoped CVD-prepared ZnS. The compositional modification used in the practice of the invention involves the introduction of gallium sulfide (Ga.sub.2 S.sub.3) as a second phase which acts to toughen and harden the ZnS. The process of the present invention achieves a hardening effect without degrading the IR transmission properties also by means of controlling the polycrystalline microstructure grains to a very small size. At the same time, porosity, which strongly degrades IR transmission, is minimized by full densification. The gallium is introduced into the ZnS by a coprecipitation process to both lower the raw material cost and obtain a suitable submicrometer precursor for the subsequent ceramic processing. The Ga-doped ZnS is then densified into an IR window and a second phase, zinc thiogallate (ZnGa.sub.2 S.sub.4), is precipitated out as a hardening phase by heat treatment. Alternatively, Ga metal is evaporated onto densified ZnS and subjected to heat treatment to form the zinc thiogallate phase.
摘要翻译： 低成本宽带红外窗口使用近净形状工艺制造，大大降低了加工和研磨窗材料的成本。 硫化锌（ZnS）IR窗口的制造使用陶瓷粉末加工来避免昂贵的现有技术化学气相沉积方法。 此外，本发明涉及一种硬化和强化ZnS作为粉末工艺的一部分的手段，其IR传输性能与未掺杂的CVD制备的ZnS相当。 在本发明的实践中使用的组成变化包括引入作为增韧和硬化ZnS的第二相的硫化镓（Ga 2 S 3）。 本发明的方法也可以通过将多晶微结构晶粒控制到非常小的尺寸来实现硬化效果而不降低IR透射特性。 同时，通过完全致密化将孔隙率大大降低，使透射率大大降低。 通过共沉淀法将镓引入到ZnS中，以降低原材料成本并获得用于随后的陶瓷加工的合适的亚微米前体。 然后将Ga掺杂的ZnS致密化为IR窗口，通过热处理将第二相（硫化镓锌（ZnGa 2 S 4））析出为硬化相。 或者，将Ga金属蒸发到致密化的ZnS上，并进行热处理以形成硫代镓酸锌相。
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4.发明授权
公开(公告)号：US5075475A
公开(公告)日：1991-12-24
申请号：US615112
申请日：1990-11-19
CPC分类号： C07F7/0896 , C07F7/0836 , C07F7/10 , C08G77/54
摘要： Silanol-terminated aromatic imide compounds of Formula I ##STR1## where R.sub.3 and R.sub.4 are each selected from the group consisting of a C.sub.1 to C.sub.6 alkyl group, an unsubstituted aryl group and a substituted aryl group, Z is a divalent radical.are prepared by:(a) reacting a bromoaniline compound with a chosen silylating agent to form a compound having the formula BrC.sub.6 H.sub.5 NSi(R.sub.1).sub.3 Si(R.sub.2).sub.3, where R.sub.1 and R.sub.2 are each a C.sub.1 to C.sub.4 alkyl group(b) reacting the compound formed in step "a" with n-butyllithium, followed by reaction with a chosen halogenated alkylsilane compound to form a compound having Formula II ##STR2## where R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are as defined above (c) reacting the compound of Formula II formed in step "b" with a dianhydride compound having the formula ##STR3## where Z is as defined above to form a compound having Formula III ##STR4## where R.sub.3, R.sub.4, and Z are as defined above (d) hydrolyzing the compound of Formula III formed in step "c" to form the compound of Formula I.The compound of Formula I may be polymerized. A preferred copolymer in accordance with the present invention is formed by polymerizing the compound of Formula I with a silicon compound having the formula ##STR5## where R.sub.3 and R.sub.4 are as defined above,X=halogen, OH, OR, NRR, or ureido,R is selected from the group consisting of aC.sub.1This invention was made with United States Government support under Contract No. F33615-86-C-5081 awarded by the Department of the Air Force. The United States Government has certain rights in this invention.
摘要翻译： 式I的硅烷醇封端的芳族酰亚胺化合物其中R 3和R 4各自选自C 1至C 6烷基，未取代的芳基和取代的芳基，Z是二价基团。 通过以下方法制备：（a）使溴苯胺化合物与选择的甲硅烷基化剂反应，形成具有式BrC 6 H 5 NS 1（R 1）3 Si（R 2）3的化合物，其中R 1和R 2各自为C 1至C 4烷基（b） 在步骤“a”中用正丁基锂形成的化合物，然后与选择的卤代烷基硅烷化合物反应以形成具有式II的化合物其中R 1，R 2，R 3和R 4如上所定义（c）使 在步骤“b”中形成的式II化合物与具有式“IMAGE”的二酐化合物，其中Z如上定义，以形成具有式III的化合物其中R3，R4和Z如上定义 （d）水解步骤“c”中形成的式III化合物以形成式I化合物。式I化合物可以聚合。 根据本发明的优选的共聚物是通过将式I化合物与式（III）的硅化合物聚合而形成的，其中R 3和R 4如上定义，X =卤素，OH，OR，NRR或脲基， R选自C1至C6烷基，未取代的芳基和取代的芳基Y = -O-或p = 1-10。
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公开(公告)号：US4782184A
公开(公告)日：1988-11-01
申请号：US683951
申请日：1984-12-19
IPC分类号： C07D207/00 , C07D213/36 , C07D215/12 , C07C87/452
CPC分类号： C07C201/08 , C07C201/12 , C07C209/36
摘要： A method is disclosed for making amino-substituted ethynlated biphenyl compounds, which includes selectively nitrating symmetrically substituted biphenyl compounds, reacting the resulting nitro-substituted aromatic compound with a copper acetylide to replace the iodo substituents with ethynyl groups, and then reacting the ethynylated, nitro-substituted aromatic compound with hydrogen in the gas phase to reduce the nitro groups to amino groups. The preferred nitrating agent is nitronium trifluoromethanesulfonate, made by reaction of anhydrous nitric acid with trifluoromethanesulfonic anhydride in an anhydrous solvent.
摘要翻译： 公开了制备氨基取代的乙炔化联苯化合物的方法，其包括选择性硝化对称取代的联苯化合物，使得到的硝基取代的芳族化合物与乙炔化铜反应，以乙炔基代替碘取代基，然后使乙炔化的硝基 - 取代的芳族化合物与氢气在气相中以将硝基还原成氨基。 优选的硝化剂是硝酸三氟甲磺酸盐，由无水硝酸与三氟甲磺酸酐在无水溶剂中反应制得。
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公开(公告)号：US4720590A
公开(公告)日：1988-01-19
申请号：US453431
申请日：1982-12-27
IPC分类号： C08G75/02 , C07C39/367 , C07C205/11 , C07C323/07 , C07C323/09 , C08G75/00 , C08G75/04 , C08G75/06 , C07C148/00 , C07C149/00
CPC分类号： C07C323/00 , C07C205/11 , C07C39/367
摘要： [2,2,2-Trifluoro-1-(trifluoromethyl)]ethylidene-bisbenzenethiols are new compounds useful as precursors in the manufacture of polysulfide polymers and copolymers.
摘要翻译： [2,2,2-三氟-1-（三氟甲基）]亚乙基双苯硫醇是可用作制备多硫化物聚合物和共聚物的前体的新化合物。
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7.发明授权Tunable impedance surface and method for fabricating a tunable impedance surface 有权可调谐阻抗表面和制造可调谐阻抗表面的方法公开(公告)号：US07683854B2
公开(公告)日：2010-03-23
申请号：US11350429
申请日：2006-02-09
IPC分类号： H01Q15/02
CPC分类号： H01Q15/008
摘要： A tunable impedance surface includes a varactor. The varactor comprises a bottom electrode formed on a surface of a substrate. First and second ferroelectric elements are on top of the bottom electrode and electrically connected to one another through the bottom electrode. A first top electrode is on top of and electrically connected to the first ferroelectric element and a second top electrode is on top of and electrically connected to the second ferroelectric element.
摘要翻译： 可调阻抗表面包括变容二极管。 变容二极管包括形成在基板的表面上的底部电极。 第一和第二铁电元件位于底部电极的顶部并通过底部电极彼此电连接。 第一顶部电极位于第一铁电元件的顶部并且电连接到第一铁电元件，并且第二顶部电极在第二铁电元件的顶部并且电连接到第二铁电元件。
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公开(公告)号：US07335552B2
公开(公告)日：2008-02-26
申请号：US10147093
申请日：2002-05-15
IPC分类号： H01L21/8242
CPC分类号： H01L21/02183 , H01G4/008 , H01G4/33 , H01L21/02244 , H01L21/02255 , H01L21/31683 , H01L28/60
摘要： A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
摘要翻译： 一种在衬底上形成导体的方法，包括在衬底的玻璃层上沉积钽的步骤; 氧化钽; 以及在氧化的钽上沉积贵金属以形成导体。 该方法可用于形成铁电电容器或其它薄膜铁电体器件。 该装置可以包括包括玻璃层的基板; 和连接到玻璃层的电极。 包括的电极可以包括通过包含Ta 2 O 5 5的粘合层连接到玻璃层的贵金属。
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9.发明授权Controlled carbon content MOD precursor materials using organic acid anhydride 失效受控碳含量使用有机酸酐的MOD前体材料
公开(公告)号：US5721009A
公开(公告)日：1998-02-24
申请号：US669122
申请日：1996-06-24
IPC分类号： C07F9/00 , C07F9/94 , C23C18/12 , H01L21/314 , H01L21/316 , B05D3/02
CPC分类号： C23C18/1216 , C07F9/005 , C07F9/94 , H01L21/02197 , H01L21/02282 , H01L21/31691
摘要： Metal organic acid salt solutions for use as precursor materials for forming layered ferroelectric thin films are synthesized using an organic acid anhydride as the exchange reagent. The reaction is much faster than previous techniques, allows exact control of exchange with control of hydrolysis product, and may be used to control the solvent of the final solution. The reaction creates no water, and can be used to exactly control the extent of reaction of all metals. By using less than or equal to a stoichiometric amount of anhydride and then further reacting the remaining alkoxides, lower carbon content solutions with less decomposable organic can be formed. As such, the present invention discloses a much improved and faster synthesis technique giving improved solutions and corresponding thin film metal oxide compositions with improved and consistent electrical performance.
摘要翻译： 使用有机酸酐作为交换剂合成用作形成层状铁电薄膜的前体材料的金属有机酸盐溶液。 反应比以前的技术快得多，允许精确控制水解产物的交换，并可用于控制最终溶液的溶剂。 该反应不产生水，可用于精确控制所有金属的反应程度。 通过使用少于或等于化学计量的酸酐，然后使剩余的醇盐进一步反应，可以形成较低碳含量的溶液与较不可分解的有机物。 因此，本发明公开了一种改进和更快速的合成技术，其提供改进的溶液和相应的具有改进和一致电性能的薄膜金属氧化物组合物。
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10.发明授权Microwave-absorbing materials containing polar icosahedral molecular units and methods of making the same 失效含有极性二十面体分子单元的微波吸收材料及其制备方法
公开(公告)号：US5574077A
公开(公告)日：1996-11-12
申请号：US159277
申请日：1993-11-30
CPC分类号： C08F8/42
摘要： A microwave-absorbing material composed of blends of polar icosahedral molecular units with a variety of host matrices, or with polymers with the units covalently bonded in a pendant manner to the polymer chain. Both blends and polymers must impart a high degree of orientational mobility to the units so that they can absorb microwave radiation. These materials employ orientationally mobile, polar icosahedral molecular units as the source of dielectric loss at microwave frequencies. Examples of these units are the polar carboranes (ortho- and meta-carborane), polar carboranes with electronegative and/or electropositive substitutes, and polar "buckminsterfullerenes."
摘要翻译： 由极性二十面体分子单元与各种主体基质的共混物组成的微波吸收材料，或具有以垂饰方式与聚合物链共价键合的单元的聚合物组成的微波吸收材料。 共混物和聚合物必须赋予单元高度的取向迁移率，使得它们能够吸收微波辐射。 这些材料采用定向移动的极性二十面体分子单元作为微波频率下的介电损耗来源。 这些单元的实例是极性碳硼烷（正 - 和偏碳硼烷），具有电负性和/或正电性取代基的极性碳硼烷，以及极性“屈敏敏聚乙烯醚”。
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