公开(公告)号：US09015914B2

公开(公告)日：2015-04-28

申请号：US13556564

申请日：2012-07-24

申请人： Taro Nishino ,  Takashi Iwamoto

发明人： Taro Nishino ,  Takashi Iwamoto

IPC分类号： H03H3/02 ,  H01L41/25 ,  H01L41/319 ,  H01L41/27 ,  H01L41/29 ,  H01L41/312 ,  H03H9/02

CPC分类号： H01L41/319 ,  H01L41/25 ,  H01L41/27 ,  H01L41/29 ,  H01L41/312 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02055 ,  H03H9/02094 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

摘要翻译： 一种制造电子部件的方法包括：制备具有平坦表面的压电体的第一步骤，将离子注入压电体的第二步骤，使得在压电体中形成离子注入层;第三步骤，形成 在压电体的平坦表面上的牺牲层，在压电体的平坦表面上形成绝缘体和牺牲层以形成压电结构的第四步骤;在离子注入处分割压电体的第五步骤 以形成其中将与压电体分离的压电膜接合到绝缘体的压电层状结构，在压电膜的分割表面的部分上形成电极的第六步骤，以及除去牺牲层的第七步骤 从压电层状结构。

公开(公告)号：US08997320B2

公开(公告)日：2015-04-07

申请号：US12864060

申请日：2008-11-26

申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

IPC分类号： H03H3/02 ,  H03H3/007 ,  H03H3/04 ,  C23C4/06 ,  H03H3/10 ,  H03H9/02 ,  C23C4/04 ,  C23C4/10

CPC分类号： H03H3/02 ,  C23C4/04 ,  C23C4/06 ,  C23C4/10 ,  H03H3/007 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02559 ,  Y10T29/42 ,  Y10T29/49147 ,  Y10T29/49155

摘要： Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.

摘要翻译： 提供一种具有优异的频率温度系数（TCF）和高精度的IDT图案形成的声波器件的制造方法，能够抵抗200度以上的高温处理。 根据本发明的声波装置的制造方法包括在压电基板（1）的主表面（1a）上形成IDT（2），并通过热喷涂形成薄膜的材料（3） 线性热膨胀系数比形成有IDT（2）的压电基板（1）的相对的主表面（1b）上的压电基板。

公开(公告)号：US20100301700A1

公开(公告)日：2010-12-02

申请号：US12864073

申请日：2008-11-26

申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

IPC分类号： H01L41/04 ,  H01L41/22

CPC分类号： H03H3/10 ,  Y10T29/42

摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。

公开(公告)号：US20100052472A1

公开(公告)日：2010-03-04

申请号：US12507284

申请日：2009-07-22

申请人： Taro Nishino ,  Takashi Iwamoto

发明人： Taro Nishino ,  Takashi Iwamoto

IPC分类号： H01L41/08 ,  H01L41/22

CPC分类号： H01L41/319 ,  H01L41/25 ,  H01L41/27 ,  H01L41/29 ,  H01L41/312 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02055 ,  H03H9/02094 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

摘要翻译： 一种制造电子部件的方法包括：制备具有平坦表面的压电体的第一步骤，将离子注入压电体的第二步骤，使得在压电体中形成离子注入层;第三步骤，形成 在压电体的平坦表面上的牺牲层，在压电体的平坦表面上形成绝缘体和牺牲层以形成压电结构的第四步骤;在离子注入处分割压电体的第五步骤 以形成其中将与压电体分离的压电膜接合到绝缘体的压电层状结构，在压电膜的分割表面的部分上形成电极的第六步骤，以及除去牺牲层的第七步骤 从压电层状结构。

公开(公告)号：US08319394B2

公开(公告)日：2012-11-27

申请号：US12864073

申请日：2008-11-26

申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Kiyoto Araki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

IPC分类号： H03H9/25

CPC分类号： H03H3/10 ,  Y10T29/42

摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).

摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。

公开(公告)号：US20120284979A1

公开(公告)日：2012-11-15

申请号：US13556564

申请日：2012-07-24

申请人： Taro NISHINO ,  Takashi IWAMOTO

发明人： Taro NISHINO ,  Takashi IWAMOTO

IPC分类号： H01L41/22

CPC分类号： H01L41/319 ,  H01L41/25 ,  H01L41/27 ,  H01L41/29 ,  H01L41/312 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02055 ,  H03H9/02094 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

摘要翻译： 一种制造电子部件的方法包括：制备具有平坦表面的压电体的第一步骤，将离子注入压电体的第二步骤，使得在压电体中形成离子注入层;第三步骤，形成 在压电体的平坦表面上的牺牲层，在压电体的平坦表面上形成绝缘体和牺牲层以形成压电结构的第四步骤;在离子注入处分割压电体的第五步骤 以形成其中将与压电体分离的压电膜接合到绝缘体的压电层状结构，在压电膜的分割表面的部分上形成电极的第六步骤，以及除去牺牲层的第七步骤 从压电层状结构。

公开(公告)号：US08120230B2

公开(公告)日：2012-02-21

申请号：US12784564

申请日：2010-05-21

申请人： Tsutomu Takai ,  Norihiro Hayakawa ,  Taro Nishino

发明人： Tsutomu Takai ,  Norihiro Hayakawa ,  Taro Nishino

IPC分类号： H03H9/25

CPC分类号： H03H9/02984 ,  H01L2224/05001 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/181 ,  H03H9/02937 ,  H03H9/059 ,  H03H9/1078 ,  H03H9/1085 ,  H03H2009/0019 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.

摘要翻译： 声波装置包括包括设置在基板上的IDT电极的声波元件和布置成覆盖声波元件以保持特性的保护膜。 保护膜是以硅和氮为主要成分的氮化硅膜，当硅与氮的组成比由1：X表示时，X为1.15以下。

公开(公告)号：US20100293770A1

公开(公告)日：2010-11-25

申请号：US12864060

申请日：2008-11-26

申请人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

发明人： Toshiyuki Fuyutsume ,  Taro Nishino ,  Hisashi Yamazaki ,  Noboru Tamura ,  Nakaba Ichikawa ,  Masaki Aruga

IPC分类号： H04R17/00

CPC分类号： H03H3/02 ,  C23C4/04 ,  C23C4/06 ,  C23C4/10 ,  H03H3/007 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02559 ,  Y10T29/42 ,  Y10T29/49147 ,  Y10T29/49155

摘要： Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.

摘要翻译： 提供一种具有优异的频率温度系数（TCF）和高精度的IDT图案形成的声波器件的制造方法，能够抵抗200度以上的高温处理。 根据本发明的声波装置的制造方法包括在压电基板（1）的主表面（1a）上形成IDT（2），并通过热喷涂形成薄膜的材料（3） 线性热膨胀系数比形成有IDT（2）的压电基板（1）的相对的主表面（1b）上的压电基板。

公开(公告)号：US20100219717A1

公开(公告)日：2010-09-02

申请号：US12784564

申请日：2010-05-21

申请人： Tsutomu TAKAI ,  Norihiro HAYAKAWA ,  Taro NISHINO

发明人： Tsutomu TAKAI ,  Norihiro HAYAKAWA ,  Taro NISHINO

IPC分类号： H01L41/053

CPC分类号： H03H9/02984 ,  H01L2224/05001 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/181 ,  H03H9/02937 ,  H03H9/059 ,  H03H9/1078 ,  H03H9/1085 ,  H03H2009/0019 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An acoustic wave device includes an acoustic wave element including an IDT electrode provided on a substrate, and a protective film arranged to cover the acoustic wave element so as to stabilize characteristics. The protective film is a silicon nitride film composed of silicon and nitrogen as main components and when a composition ratio of the silicon to the nitrogen is represented by 1:X, X is about 1.15 or less.

摘要翻译： 声波装置包括包括设置在基板上的IDT电极的声波元件和布置成覆盖声波元件以保持特性的保护膜。 保护膜是以硅和氮为主要成分的氮化硅膜，当硅与氮的组成比由1：X表示时，X为1.15以下。

公开(公告)号：US08253301B2

公开(公告)日：2012-08-28

申请号：US12507284

申请日：2009-07-22

申请人： Taro Nishino ,  Takashi Iwamoto

发明人： Taro Nishino ,  Takashi Iwamoto

IPC分类号： H01L41/08

CPC分类号： H01L41/319 ,  H01L41/25 ,  H01L41/27 ,  H01L41/29 ,  H01L41/312 ,  H01L41/313 ,  H03H3/02 ,  H03H9/02055 ,  H03H9/02094 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： A method for manufacturing an electronic component includes a first step of preparing a piezoelectric body with a flat surface, a second step of implanting ions into the piezoelectric body such that an ion-implanted layer is formed in the piezoelectric body, a third step of forming sacrificial layers on the flat surface of the piezoelectric body, a fourth step of forming an insulating body over the flat surface of the piezoelectric body and the sacrificial layers to form a piezoelectric structure, a fifth step of dividing the piezoelectric body at the ion-implanted layer to form a piezoelectric laminar structure in which a piezoelectric film separated from the piezoelectric body is bonded to the insulating body, a sixth step of forming electrodes on portions of a division surface of the piezoelectric film, and a seventh step of removing the sacrificial layers from the piezoelectric laminar structure.

摘要翻译： 一种制造电子部件的方法包括：制备具有平坦表面的压电体的第一步骤，将离子注入压电体的第二步骤，使得在压电体中形成离子注入层;第三步骤，形成 在压电体的平坦表面上的牺牲层，在压电体的平坦表面上形成绝缘体和牺牲层以形成压电结构的第四步骤;在离子注入处分割压电体的第五步骤 以形成其中将与压电体分离的压电膜接合到绝缘体的压电层状结构，在压电膜的分割表面的部分上形成电极的第六步骤，以及除去牺牲层的第七步骤 从压电层状结构。