公开(公告)号：US08772942B2

公开(公告)日：2014-07-08

申请号：US12693637

申请日：2010-01-26

申请人： Daniel C. Edelstein ,  Takeshi Nogami ,  Kazumichi Tsumura ,  Takamasa Usui

发明人： Daniel C. Edelstein ,  Takeshi Nogami ,  Kazumichi Tsumura ,  Takamasa Usui

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/4814 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metallic liner stack including at least a Group VIIIB element layer and a CuMn alloy layer is deposited within a trench in a dielectric layer. Copper is deposited on the metallic liner stack and planarized to form a conductive interconnect structure, which can be a metal line, a metal via, or a combination thereof. The deposited copper and the metallic liner stack are annealed before or after planarization. The Mn atoms are gettered by the Group VIIIB element layer to form a metallic alloy liner including Mn and at least one of Group VIIIB elements. Mn within the metallic alloy liner combines with oxygen during the anneal to form MnO, which acts as a strong barrier to oxygen diffusion, thereby enhancing the reliability of the conductive interconnect structure.

公开(公告)号：US07944053B2

公开(公告)日：2011-05-17

申请号：US12276796

申请日：2008-11-24

申请人： Takamasa Usui ,  Tadayoshi Watanabe

发明人： Takamasa Usui ,  Tadayoshi Watanabe

IPC分类号： H01L23/48

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first insulating film is formed on a semiconductor substrate. A first interconnection is formed in a trench formed in the first insulating film. A first barrier film is formed between the first interconnection and first insulating film. A second insulating film is formed on the upper surface of the first interconnection, and in a first hollow portion between the side surface of the first barrier film and the first insulating film. The second insulating film is formed from the upper surface of the first interconnection to a depth higher than the bottom surface of the first interconnection. The first hollow portion is formed below the bottom surface of the second insulating film.

摘要翻译： 在半导体衬底上形成第一绝缘膜。 第一互连形成在形成在第一绝缘膜中的沟槽中。 在第一互连和第一绝缘膜之间形成第一阻挡膜。 第一绝缘膜形成在第一互连件的上表面上，第一绝缘膜在第一阻挡膜的侧表面和第一绝缘膜之间的第一中空部分中形成。 第二绝缘膜由第一互连的上表面形成为比第一互连的底表面高的深度。 第一中空部形成在第二绝缘膜的下表面的下方。

公开(公告)号：US07943517B2

公开(公告)日：2011-05-17

申请号：US11877243

申请日：2007-10-23

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。

公开(公告)号：US07638829B2

公开(公告)日：2009-12-29

申请号：US11432660

申请日：2006-05-12

申请人： Yumi Hayashi ,  Hayato Nasu ,  Kazumichi Tsumura ,  Takamasa Usui ,  Hiroyoshi Tanimoto

发明人： Yumi Hayashi ,  Hayato Nasu ,  Kazumichi Tsumura ,  Takamasa Usui ,  Hiroyoshi Tanimoto

IPC分类号： H01L27/108

CPC分类号： H01L29/945 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/40 ,  H01L29/66181

摘要： A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.

摘要翻译： 形成在半导体衬底上的晶体管具有通过栅极绝缘膜形成的栅电极和形成在半导体衬底中的第一和第二扩散层，第一和第二扩散层位于栅电极的两侧。 第一电极连接到晶体管的第一扩散层。 形成在第一电极上的电容器绝缘膜由包含衬底的氧化硅膜形成，该衬底的扩散速度比Cu快，并且比Cu更容易与氧反应。 形成在电容器绝缘膜上的第二电极由Cu层和含有该物质的另一Cu层中的一个形成。

公开(公告)号：US20080246155A1

公开(公告)日：2008-10-09

申请号：US12059213

申请日：2008-03-31

申请人： Yumi Hayashi ,  Tadayoshi Watanabe ,  Takamasa Usui

发明人： Yumi Hayashi ,  Tadayoshi Watanabe ,  Takamasa Usui

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76886 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment includes: a semiconductor substrate having a semiconductor element formed on a surface thereof; an interwiring insulating film formed above the semiconductor substrate; a wiring formed in the interwiring insulating film; a first intervia insulating film formed under the interwiring insulating film; a first via formed in the first intervia insulating film and connected to a lower surface of the wiring; a second intervia insulating film formed on the interwiring insulating film; a second via formed in the second intervia insulating film and connected to an upper surface of the wiring; and a CuSiN film formed in at least one of a position between the interwiring insulating film and the first intervia insulating film, and a position between the interwiring insulating film and the second intervia insulating film.

摘要翻译： 根据实施例的半导体器件包括：在其表面上形成有半导体元件的半导体衬底; 形成在所述半导体衬底上的相互连接的绝缘膜; 在布线绝缘膜中形成的布线; 形成在相互连接绝缘膜下面的第一介电绝缘膜; 第一通孔，其形成在第一互隔绝缘膜中并连接到布线的下表面; 形成在所述相互连接绝缘膜上的第二互感绝缘膜; 第二通孔，其形成在所述第二对位绝缘膜中并连接到所述布线的上表面; 以及形成在所述相互连接绝缘膜和所述第一间隔绝缘膜之间的位置中的至少一个以及所述布线间绝缘膜和所述第二互隔绝缘膜之间的位置的CuSiN膜。

公开(公告)号：US20080203573A1

公开(公告)日：2008-08-28

申请号：US11960209

申请日：2007-12-19

申请人： Takamasa Usui ,  Hideki Shibata ,  Tadashi Murofushi ,  Masakazu Jimbo ,  Hiroshi Hirayama

发明人： Takamasa Usui ,  Hideki Shibata ,  Tadashi Murofushi ,  Masakazu Jimbo ,  Hiroshi Hirayama

IPC分类号： H01L23/48

CPC分类号： H01L23/5222 ,  H01L23/522 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device including first and second wiring layers, and dummy and conductive patterns. The first and second wiring layers each have a hollow structure, and are stacked vertically adjacent to each other on a semiconductor substrate. The dummy pattern is formed in the first wiring layer, and does not function as a signal line. The conductive pattern is formed in the second wiring layer. The dummy and conductive patterns have an overlapping portion where these patterns overlap each other, and a non-overlapping portion where these patterns overlap each other, as viewed from above the semiconductor substrate.

摘要翻译： 提供了包括第一和第二布线层以及虚拟和导电图案的半导体器件。 第一和第二布线层各自具有中空结构，并且在半导体衬底上彼此垂直地堆叠。 虚设图案形成在第一布线层中，不用作信号线。 导电图案形成在第二布线层中。 伪距和导电图案具有这些图案彼此重叠的重叠部分，以及从半导体基板的上方观察这些图案彼此重叠的非重叠部分。

公开(公告)号：US07410248B2

公开(公告)日：2008-08-12

申请号：US11193359

申请日：2005-08-01

申请人： Takaichiro Umeda ,  Hikaru Kaga ,  Tsuyoshi Suzuki ,  Seiji Shimizu ,  Takamasa Usui ,  Yoichiro Shimizu

发明人： Takaichiro Umeda ,  Hikaru Kaga ,  Tsuyoshi Suzuki ,  Seiji Shimizu ,  Takamasa Usui ,  Yoichiro Shimizu

IPC分类号： B41J2/175 ,  B41J2/165 ,  B41J2/19

CPC分类号： B41J2/19 ,  B41J2/17513

摘要： An ink jet printer including a carriage which is movable relative to a sheet of paper, a recording head which is mounted on the carriage and records an image on the sheet by ejecting a droplet of ink toward the sheet, one or more ink tanks which store the ink or inks to be supplied to the recording head, a buffer tank which is mounted on the carriage, and one or more ink flow passages in which the inks are supplied from the ink tanks to the recording head via the buffer tank. The buffer tank has, at a height position higher than a height position where the recording head is provided, one or more air buffer chambers which accommodate respective amounts of the inks, and collect air bubbles produced in the ink flow passages. The printer further includes one or more air bubble discharging passages which communicate, at one ends thereof, with upper portions of the air buffer chambers, and discharge, via the other ends thereof, the air bubbles collected by the air buffer chambers.

摘要翻译： 一种喷墨打印机，其包括可相对于一张纸移动的托架;记录头，其安装在托架上，并通过向纸张喷射墨滴将图像记录在纸张上;一个或多个墨盒，其存储 要提供给记录头的墨水或墨水，安装在滑架上的缓冲罐，以及一个或多个墨水流动通道，其中墨水通过缓冲罐从墨水盒供应到记录头。 缓冲罐在高于设置有记录头的高度位置的高度位置处具有一个或多个空气缓冲室，其适应相应量的油墨，并且收集在油墨流动通道中产生的气泡。 打印机还包括一个或多个气泡排出通道，其一端与空气缓冲室的上部连通，并且经由其另一端排出由空气缓冲室收集的气泡。

公开(公告)号：US20080146015A1

公开(公告)日：2008-06-19

申请号：US11956868

申请日：2007-12-14

申请人： Takamasa USUI ,  Tadayoshi WATANABE ,  Hayato NASU

发明人： Takamasa USUI ,  Tadayoshi WATANABE ,  Hayato NASU

IPC分类号： H01L21/44

CPC分类号： H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76888

摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a precursor film containing therein a predetermined metallic element on a surface of a recess portion formed in an insulating film on a semiconductor substrate; forming a wiring formation film on the precursor film; performing a heat treatment in an oxidation ambient atmosphere to cause the precursor film and the insulating film to react with each other, thereby forming a self-formed barrier film containing a compound, containing therein the predetermined metallic element and a constituent element of the insulating film, as a basic constituent in a boundary surface between the precursor film and the insulating film, and moving the predetermined metallic element unreacted into the wiring formation film through diffusion to cause the predetermined metallic element unreacted to react with oxygen contained in the oxidation ambient atmosphere on a surface of the wiring formation film, thereby precipitating an unreacted metallic oxide film including the predetermined metallic element; forming the same material as that of the wiring formation film on the wiring formation film after the unreacted metallic oxide film is removed; and flattening the wiring formation film until a portion of the insulating film located outside the recess portion is exposed.

摘要翻译： 根据实施例的制造半导体器件的方法包括：在半导体衬底上的形成在绝缘膜上的凹部的表面上形成含有预定金属元素的前体膜; 在前体膜上形成布线形成膜; 在氧化环境气氛中进行热处理，使前体膜和绝缘膜发生反应，从而形成含有化合物的自形成阻挡膜，其中含有预定的金属元素和绝缘膜的构成元素 作为前体膜和绝缘膜之间的边界面的基本成分，通过扩散将未反应的规定金属元素移动到配线形成膜中，使规定的金属元素未反应与氧化环境气氛中所含的氧反应 形成布线形成膜的表面，由此析出含有规定的金属元素的未反应的金属氧化物膜; 在除去未反应的金属氧化物膜之后，在布线形成膜上形成与布线形成膜相同的材料; 并使布线形成膜平坦化，直到露出位于凹部外侧的绝缘膜的一部分。

公开(公告)号：US07364279B2

公开(公告)日：2008-04-29

申请号：US11073874

申请日：2005-03-08

申请人： Takamasa Usui ,  Masayuki Takata

发明人： Takamasa Usui ,  Masayuki Takata

IPC分类号： B41J2/17 ,  B41J2/175

CPC分类号： B41J2/17523 ,  B41J2/17513 ,  B41J2/17556

摘要： An ink-jet printer, including: a printing head for performing printing on a print medium by ejecting ink from nozzles; an ink tank for storing the ink to be supplied to the printing head; an ink passage through which the ink is supplied from the ink tank to the printing head; a buffer tank which stores the ink supplied through the ink passage; and an air-discharging device which discharges an air accumulated in the buffer tank through an air-discharge passage and which includes a valve member operable to open and close a communication opening that is provided in the air-discharge passage a part of which functions as a valve chamber and having: a valve portion which opens and closes the communication opening and which includes a sealing member; and a rod portion connected to the valve portion, wherein the air-discharging device further includes air-discharge-flow assuring means for assuring a discharge flow of the air flowing from the buffer tank through the air-discharge passage.

摘要翻译： 一种喷墨打印机，包括：用于通过从喷嘴喷射墨在打印介质上进行打印的打印头; 用于存储要供应到打印头的墨水的墨盒; 油墨通道，油墨从油墨罐供应到打印头; 缓冲罐，储存通过油墨通道供给的油墨; 以及排气装置，其通过排气通道排出积存在缓冲罐中的空气，并且其包括可操作以打开和关闭设置在排气通道中的连通开口的阀构件，该连通开口的一部分的功能为 阀室，具有：打开和关闭连通开口并包括密封件的阀部分; 以及与所述阀部连接的杆部，其中，所述排气装置还包括排气流保证装置，用于确保从所述缓冲罐经过所述排气通道流出的空气的排出流。

公开(公告)号：US20080018355A1

公开(公告)日：2008-01-24

申请号：US11769432

申请日：2007-06-27

申请人： Kiyoshi TAKEKOSHI ,  Hisatomi Hosaka ,  Junichi Hagihara ,  Kunihiko Hatsushika ,  Takamasa Usui ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Yoshiyuki Ido

发明人： Kiyoshi TAKEKOSHI ,  Hisatomi Hosaka ,  Junichi Hagihara ,  Kunihiko Hatsushika ,  Takamasa Usui ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Yoshiyuki Ido

IPC分类号： G01R31/26

CPC分类号： G01R31/2862 ,  G01R1/0433 ,  G01R1/0491 ,  G01R31/2831 ,  G01R31/286 ,  G01R31/2865 ,  G01R31/2867 ,  G01R31/287 ,  G01R31/2886

摘要： A reliability evaluation test apparatus of this invention includes a wafer storage section which stores a wafer in a state wherein the electrode pads of a number of devices formed on the wafer and the bumps of a contactor are totally in electrical contact with each other. The wafer storage section transmits/receives a test signal to/from a measurement section and has a hermetic and heat insulating structure. The wafer storage section has a pressure mechanism which presses the contactor and a heating mechanism which directly heats the wafer totally in contact with the contactor to a predetermined high temperature. The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.

摘要翻译： 本发明的可靠性评价试验装置包括晶片存储部，其以形成在晶片上的多个器件的电极焊盘和接触器的凸块完全电接触的状态存储晶片。 晶片存储部分向/从测量部分发送/接收测试信号，并具有密封和隔热结构。 晶片存储部分具有压力接触器的压力机构和将与接触器完全接触的晶片直接加热到预定高温的加热机构。 在加速条件下评估形成在半导体晶片上的互连膜和绝缘膜的可靠性。