Abstract:
A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.
Abstract:
An engine generator can have an engine duct for releasing to the outside a cooling air which is used to cool an engine and a muffler, and a generator duct for releasing to the outside a cooling air which is used to cool a generator. The engine duct and the generator duct can be formed in one body as an exhaust duct. The muffler and the generator can be laterally aligned in parallel with each other, and the engine duct and the generator duct can be located in a manner such that the directions of release of the cooling winds from the engine duct and the generator duct are parallel to each other. The exhaust duct can be located with the generator duct secured to a crankcase. An opening of the engine duct, and an opening of the generator duct can be laterally aligned with each other, and the opening of the generator duct can be positioned above the generator.
Abstract:
With conventional device, the quantity of complex defects differs with each semiconductor device because the concentration of impurities intrinsically contained differs for each silicon wafer. Consequently, there is an undesirable variation in characteristics among the semiconductor devices. The invention provides a method for manufacturing PIN type diode which comprises an intermediate semiconductor region in which complex defects are formed. The method comprises introducing impurities (for example, carbon), which are the same kind of impurities intrinsically contained in the intermediate semiconductor region, into the intermediate semiconductor region, and irradiating the intermediate semiconductor region with helium ions to form point defects.
Abstract:
A power generator system incorporates a generator driven by an engine. A case houses the generator and the engine. A controller communicates with the engine so as to control the speed at which the engine drives the generator. A temperature sensor is disposed so as to sense a temperature within the case and to send a temperature signal to the controller. The controller controls the speed of the engine depending upon at least the temperature signal received from the temperature sensor.
Abstract:
A power generator unit incorporates an engine and a generator driven by the engine. The generator incorporates a sound insulation cover that allows for efficient cooling of the various internal components. An engine crankcase cover mounts the generator close to the engine to promote a compact construction while allowing sufficient cooling of the engine, the generator, and a muffler. A fan draws in cooling air through one or more cooling air vents to cool a battery, an electronic control unit, the engine, the generator, and the muffler. The insulation cover provides quiet operation and efficient cooling of the power generator unit.
Abstract:
A point of sale-data processing apparatus has a handy type optical scanner for reading a bar code attached or marked on a product. The apparatus performs a predetermined process of sales with regard to the product in accordance with product information previously recorded and corresponding to the read bar code. A scanner holding recess for detachably holding the optical scanner is provided at the outer surface of a main body housing of the apparatus, on which various enter keys and a display panel are provided. The scanner held in the recess orients a bar code read window thereof toward the outside of the recess.
Abstract:
There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
Abstract:
A fuel tank has a tank body and a fuel inlet projecting upwardly from the tank body. The fuel tank includes a cylindrical member extending into the tank body, a canister, and a discharging passage in communication with the canister housing an adsorbent for absorbing fuel vapor from the fuel tank. A space between an outer circumferential surface of the cylindrical member and an inner circumferential surface of the fuel inlet is hermetically sealed by a seal. The cylindrical member has a passage for communicating an inside of the cylindrical member with a portion of an outside of the cylindrical member that is lower than the hermetically sealed space. The passage allows air in the tank body to enter the fuel inlet when fuel overflows from the fuel inlet, thereby inhibiting flow of fuel into the canister through the discharging passage.
Abstract:
The present invention provides a technique for accumulating minority carriers in the body region, that is, the intermediate region interposed between the top region and the deep region, and thus increasing the concentration of minority carriers in the intermediate region. A semiconductor device has a top region (34) of a second conductivity type, a deep region (26) of the second conductivity type, and an intermediate region (28) of a first conductivity type for isolating the top region and the deep region. The semiconductor device further has a trench gate (32) facing a portion of the intermediate region via an insulating layer (33). The portion facing the trench gate isolates the top region and the deep region. The trench gate extends along a longitudinal direction. The width of the trench gate is not uniform along the longitudinal direction; instead the width of the trench gate varies along the longitudinal direction.
Abstract:
A power generating apparatus includes an engine for driving a generator, a muffler cover for covering a muffler for exhaust supplied from the engine from an external side of the muffler, a fuel tank for storing fuel to be supplied to the engine, and a canister containing an adsorbent for adsorbing thereonto fuel that evaporates from the fuel tank. The canister includes a communicating tube, which places the canister in communication with the atmosphere. The canister is also in communication with an intake system of the engine. The communicating tube of the canister has its opening at a position near to the muffler as well as to an inner surface, on the side of the muffler, of the muffler cover, to improve the purge characteristics of the adsorbent so that the usable live of the adsorbent is increased.