摘要:
A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
摘要:
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.
摘要:
A PDP with improved luminous efficiency is provided which prevents erroneous discharge and emission in adjacent cell spaces (8) and which effectively takes out light produced in the cell spaces (8), and a plasma display device having the PDP is also provided. The space between a front substrate (not shown) and a back substrate (1) is sectioned into a plurality of independent cell spaces (8) by grid-like barrier ribs (2). The cell spaces (8) include discharge cells (9) and non-discharge cells (10). The discharge cells (9) and the non-discharge cells (10) are alternately arranged in horizontal and vertical directions (in alternate checkers). A phosphor (3) is applied in the discharge cells (9) and the phosphor (3) is not applied in the non-discharge cells (10).
摘要:
A sustain electrode (10, 20) formed by a metal thick film consists of (i) a base portion (15, 25) extending along a second direction (D2) and (ii) a projecting portion (16, 26) coupled with the base portion (15, 25) to extend toward another sustain electrode (20, 10) with respect to the base portion (15, 25). The projecting portion (16, 26) consists of (ii-1) two first portions (161, 261) coupled with an end of the base portion (15, 25) in the second direction (D2) to extend along a first direction (D1), (ii-2) a second portion (162, 262) coupled with an end of the first portion (161, 261) on the side of the other sustain electrode (20, 10) in the first direction (D1) to extend along the second direction (D2) and connect the two first portions (161, 261) with each other, and (ii-3) a third portion (163, 263) coupled with portions of the first portions (161, 261) separate from the second portion (162, 262) for connecting the two first portions (161, 261) with each other. Luminance of an AC-PDP comprising a sustain electrode consisting of only a metal thick film can be improved.
摘要:
An electron source includes a cathode electrode having an emitter of conical shape. A first insulating film surrounds the emitter. A first extracting electrode disposed on the first insulating film draws out electrons from the emitter. A second insulating film is disposed on the extracting electrode and a focusing electrode is disposed on the second insulating film for focusing the electrons. The films and electrodes are hollowed to constitute a well surrounding the emitter, and the electrodes are applied predetermined voltages respectively to control the electrons emitted from the emitter. A disturbance that the voltage applied to the focusing electrode causes to the electric field around a summit of the emitter is suppressed. The electrode source may be made by determining a thickness of a masking material so that, when forming the conical emitter, an area occupied by the films deposited on the masking material in the well is smaller than the well when all the films have been completed. The emitter of conical shape is formed in the cathode electrode by using the mask having the determined thickness. The first insulating film, the extracting electrode, the second insulating film, and the focusing electrode are then successively formed, after removing the mask and the layers deposited on the mask successively.
摘要:
On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要:
A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.
摘要:
A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
摘要:
A display device mounted in a vacuum area between the front panel and the first base substrate of a CRT display which includes a plurality of second substrates having electron emitting elements. A plurality of deflection electrodes are mounted around the electron emitting elements and have heights which vary so that they decrease toward a peripheral portion of the second substrate for deflecting derived electrons outward to irradiate a fluorescent surface corresponding to the gaps between the second substrates. According to the plurality of second substrates and the deflection electrodes, a large sized display device can be manufactured.
摘要:
A laser machining method and apparatus that allow accurate and fine scribing without the need of a large-scale dust collector and a large quantity of cleaning fluid when a thin film on a substrate is scribed by a laser beam. A laser beam from a laser beam source is focused by a lens, introduced into a window of piping and propagated through cleaning fluid, and the thin film is illuminated with the laser beam from the nozzle. Concurrently with this beam illumination, a jet of the cleaning fluid supplied using a fluid flow controller is discharged from the nozzle that is disposed about substantially the optical axis of the focused laser beam and sized in inside diameter such that the focused laser beam does not make a contact with the nozzle. By these processes, laser-scribing is performed.