公开(公告)号：US20060141683A1

公开(公告)日：2006-06-29

申请号：US10529373

申请日：2004-08-17

申请人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

发明人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

IPC分类号： H01L21/84 ,  H01L21/20 ,  C30B11/00

CPC分类号： H01L21/02686 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L29/66757

摘要： A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.

摘要翻译： 制造半导体材料薄膜的方法包括：扫描照射步骤，为了在基板的表面上形成多晶硅膜，将具有可见波长的第一脉冲激光聚焦成具有 在基板的表面上的宽度方向上的大致高斯形状的强度分布，并且施加光，使得线形状在宽度方向上偏移; 边缘处理步骤，在沿一个方向的一个位置执行扫描照射步骤之后，将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。

公开(公告)号：US07732815B2

公开(公告)日：2010-06-08

申请号：US11836312

申请日：2007-08-09

申请人： Toru Takeguchi ,  Shinsuke Yura

发明人： Toru Takeguchi ,  Shinsuke Yura

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/112

CPC分类号： H01L21/02675 ,  B23K26/064 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/40 ,  B23K2101/42 ,  B23K2103/50 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.

摘要翻译： 根据本发明实施例的半导体薄膜包括：通过向非晶半导体薄膜施加激光而形成的多晶半导体薄膜; 以及排列成尺寸为激光的振荡波长的约1/2的晶格形状的晶粒。

公开(公告)号：US06787978B2

公开(公告)日：2004-09-07

申请号：US09993692

申请日：2001-11-27

申请人： Shinsuke Yura ,  Shigeki Harada ,  Ko Sano

发明人： Shinsuke Yura ,  Shigeki Harada ,  Ko Sano

IPC分类号： H01J1102

CPC分类号： H01J11/12 ,  H01J11/36 ,  H01J11/44 ,  H01J2211/245 ,  H01J2211/326 ,  H01J2211/442 ,  H01J2211/444

摘要： A PDP with improved luminous efficiency is provided which prevents erroneous discharge and emission in adjacent cell spaces (8) and which effectively takes out light produced in the cell spaces (8), and a plasma display device having the PDP is also provided. The space between a front substrate (not shown) and a back substrate (1) is sectioned into a plurality of independent cell spaces (8) by grid-like barrier ribs (2). The cell spaces (8) include discharge cells (9) and non-discharge cells (10). The discharge cells (9) and the non-discharge cells (10) are alternately arranged in horizontal and vertical directions (in alternate checkers). A phosphor (3) is applied in the discharge cells (9) and the phosphor (3) is not applied in the non-discharge cells (10).

摘要翻译： 提供了一种具有提高的发光效率的PDP，其防止相邻单元空间（8）中的错误放电和发射，并且有效地取出在单元空间（8）中产生的光，并且还提供具有PDP的等离子体显示装置。 前面基板（未图示）与背面基板（1）之间的空间被格栅状的隔壁（2）分割为多个独立的单元间隙（8）。 电池空间（8）包括放电单元（9）和非放电单元（10）。 放电单元（9）和非放电单元（10）在水平和垂直方向上交替布置（在交替的检查中）。 在放电单元（9）中施加荧光体（3），在非放电单元（10）中不施加荧光体（3）。

公开(公告)号：US06522072B1

公开(公告)日：2003-02-18

申请号：US09666474

申请日：2000-09-20

申请人： Shinsuke Yura ,  Kazuya Kawabe ,  Shigeki Harada ,  Takashi Hashimoto

发明人： Shinsuke Yura ,  Kazuya Kawabe ,  Shigeki Harada ,  Takashi Hashimoto

IPC分类号： H01J1102

CPC分类号： H01J11/12 ,  H01J11/24 ,  H01J2211/245 ,  H01J2211/323

摘要： A sustain electrode (10, 20) formed by a metal thick film consists of (i) a base portion (15, 25) extending along a second direction (D2) and (ii) a projecting portion (16, 26) coupled with the base portion (15, 25) to extend toward another sustain electrode (20, 10) with respect to the base portion (15, 25). The projecting portion (16, 26) consists of (ii-1) two first portions (161, 261) coupled with an end of the base portion (15, 25) in the second direction (D2) to extend along a first direction (D1), (ii-2) a second portion (162, 262) coupled with an end of the first portion (161, 261) on the side of the other sustain electrode (20, 10) in the first direction (D1) to extend along the second direction (D2) and connect the two first portions (161, 261) with each other, and (ii-3) a third portion (163, 263) coupled with portions of the first portions (161, 261) separate from the second portion (162, 262) for connecting the two first portions (161, 261) with each other. Luminance of an AC-PDP comprising a sustain electrode consisting of only a metal thick film can be improved.

摘要翻译： 由金属厚膜形成的维持电极（10,20）由（i）沿着第二方向（D2）延伸的基部（15,25）和（ii）与所述第二方向（D2）连接的突出部（16,26） 基部（15,25）相对于所述基部（15,25）朝向另一个维持电极（20,10）延伸。 突出部分（16,26）由（ii-1）两个第一部分（161,261）组成，两个第一部分（161,261）沿着第二方向（D2）与基部（15,25）的端部联接，以沿着第一方向 D1），（ii-2）与所述第一部分（161,261）的在所述第一方向（D1）的所述另一个维持电极（20,10）一侧的端部连接的第二部分（162,262），至 沿着第二方向（D2）延伸并且将两个第一部分（161,261）彼此连接，并且（ii-3）与第一部分（161,261）的部分分离的第三部分（163,263）分离 从用于将两个第一部分（161,261）彼此连接的第二部分（162,262）。 可以提高包括仅由金属厚膜构成的维持电极的AC-PDP的亮度。

公开(公告)号：US5763987A

公开(公告)日：1998-06-09

申请号：US636307

申请日：1996-04-23

申请人： Kazutoshi Morikawa ,  Shinsuke Yura ,  Shinji Kawabuchi

发明人： Kazutoshi Morikawa ,  Shinsuke Yura ,  Shinji Kawabuchi

IPC分类号： H01J3/02 ,  H01J9/02 ,  H01J1/30 ,  H01J31/02

CPC分类号： H01J3/022 ,  H01J9/025

摘要： An electron source includes a cathode electrode having an emitter of conical shape. A first insulating film surrounds the emitter. A first extracting electrode disposed on the first insulating film draws out electrons from the emitter. A second insulating film is disposed on the extracting electrode and a focusing electrode is disposed on the second insulating film for focusing the electrons. The films and electrodes are hollowed to constitute a well surrounding the emitter, and the electrodes are applied predetermined voltages respectively to control the electrons emitted from the emitter. A disturbance that the voltage applied to the focusing electrode causes to the electric field around a summit of the emitter is suppressed. The electrode source may be made by determining a thickness of a masking material so that, when forming the conical emitter, an area occupied by the films deposited on the masking material in the well is smaller than the well when all the films have been completed. The emitter of conical shape is formed in the cathode electrode by using the mask having the determined thickness. The first insulating film, the extracting electrode, the second insulating film, and the focusing electrode are then successively formed, after removing the mask and the layers deposited on the mask successively.

摘要翻译： 电子源包括具有圆锥形发射体的阴极电极。 第一绝缘膜围绕发射器。 设置在第一绝缘膜上的第一提取电极从发射极引出电子。 第二绝缘膜设置在提取电极上，并且聚焦电极设置在用于聚焦电子的第二绝缘膜上。 膜和电极被挖空以构成围绕发射极的阱，并且分别施加预定电压的电极以控制从发射极发射的电子。 施加到聚焦电极的电压导致发射极顶端附近的电场的干扰被抑制。 可以通过确定掩模材料的厚度来制造电极源，使得当形成锥形发射器时，当所有膜已经完成时，沉积在阱中的掩模材料上的膜占据的面积小于阱。 通过使用具有确定厚度的掩模，在阴极中形成锥形发射器。 然后，依次形成第一绝缘膜，提取电极，第二绝缘膜和聚焦电极，然后依次形成除去掩模和掩模之后的层。

公开(公告)号：US08080450B2

公开(公告)日：2011-12-20

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US07223644B2

公开(公告)日：2007-05-29

申请号：US10530026

申请日：2004-08-17

申请人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

发明人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

IPC分类号： H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/78675

摘要： A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.

摘要翻译： 薄膜半导体的制造方法包括多晶化，将可见光脉冲激光聚焦成被照射物体的表面上的线状，并且通过使可见光脉冲激光器移位，使得线状照射区域为 与在线状照射区域的宽度方向的下一定时照射的区域重叠，以在物体的表面上形成多晶硅膜。 在将可见光脉冲激光器施加到第一照射区域之前或之前，多晶化步骤将紫外光脉冲激光施加到与第一照射区域部分重叠的第二照射区域上。

公开(公告)号：US07179725B2

公开(公告)日：2007-02-20

申请号：US10529373

申请日：2004-08-17

申请人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

发明人： Mitsuo Inoue ,  Hidetada Tokioka ,  Shinsuke Yura

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L29/66757

摘要： A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.

摘要翻译： 制造半导体材料薄膜的方法包括：扫描照射步骤，为了在基板的表面上形成多晶硅膜，将具有可见波长的第一脉冲激光聚焦成具有 在基板的表面上的宽度方向上的大致高斯形状的强度分布，并且施加光，使得线形状在宽度方向上偏移; 边缘处理步骤，在沿一个方向的一个位置执行扫描照射步骤之后，将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。

公开(公告)号：US5994832A

公开(公告)日：1999-11-30

申请号：US366376

申请日：1994-12-29

申请人： Shinsuke Yura ,  Shinji Horibata

发明人： Shinsuke Yura ,  Shinji Horibata

IPC分类号： H01J29/74 ,  H01J29/46 ,  H01J31/12 ,  H01J31/15 ,  H01J29/08

CPC分类号： H01J29/467 ,  H01J31/127

摘要： A display device mounted in a vacuum area between the front panel and the first base substrate of a CRT display which includes a plurality of second substrates having electron emitting elements. A plurality of deflection electrodes are mounted around the electron emitting elements and have heights which vary so that they decrease toward a peripheral portion of the second substrate for deflecting derived electrons outward to irradiate a fluorescent surface corresponding to the gaps between the second substrates. According to the plurality of second substrates and the deflection electrodes, a large sized display device can be manufactured.

摘要翻译： 一种显示装置，其安装在CRT显示器的前面板和第一基板之间的真空区域中，该显示装置包括具有电子发射元件的多个第二基板。 多个偏转电极安装在电子发射元件周围并且具有变化的高度，使得它们朝向第二基板的周边部分减小，用于偏转导出的电子向外以照射对应于第二基板之间的间隙的荧光表面。 根据多个第二基板和偏转电极，可以制造大尺寸的显示装置。

公开(公告)号：US20120074105A1

公开(公告)日：2012-03-29

申请号：US13375242

申请日：2009-07-10

申请人： Tatsuki Okamoto ,  Shinsuke Yura ,  Tomotaka Katsura ,  Daiji Morita

发明人： Tatsuki Okamoto ,  Shinsuke Yura ,  Tomotaka Katsura ,  Daiji Morita

IPC分类号： B23K26/04 ,  B23K26/38

CPC分类号： B23K26/36 ,  B23K26/146

摘要： A laser machining method and apparatus that allow accurate and fine scribing without the need of a large-scale dust collector and a large quantity of cleaning fluid when a thin film on a substrate is scribed by a laser beam. A laser beam from a laser beam source is focused by a lens, introduced into a window of piping and propagated through cleaning fluid, and the thin film is illuminated with the laser beam from the nozzle. Concurrently with this beam illumination, a jet of the cleaning fluid supplied using a fluid flow controller is discharged from the nozzle that is disposed about substantially the optical axis of the focused laser beam and sized in inside diameter such that the focused laser beam does not make a contact with the nozzle. By these processes, laser-scribing is performed.

摘要翻译： 激光加工方法和装置，当通过激光束刻划基板上的薄膜时，允许精确和精细的划线而不需要大型集尘器和大量清洁流体。 来自激光束源的激光束被透镜聚焦，被引入到管道的窗口中并通过清洁流体传播，并且用来自喷嘴的激光束照射薄膜。 与该光束照明同时，使用流体流量控制器供应的清洁流体的射流从基本上围绕聚焦激光束的光轴设置的喷嘴排出，并且尺寸为内径，使得聚焦的激光束不会 与喷嘴接触。 通过这些处理，执行激光划线。