公开(公告)号：US5580380A

公开(公告)日：1996-12-03

申请号：US380079

申请日：1995-01-30

Applicant: Jiang Liu ,  Scott Wolter ,  Michael T. McClure ,  Brian R. Stoner ,  Jeffrey T. Glass ,  John J. Hren

Inventor： Jiang Liu ,  Scott Wolter ,  Michael T. McClure ,  Brian R. Stoner ,  Jeffrey T. Glass ,  John J. Hren

IPC: C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/458 ,  C23C16/50 ,  C23C16/511 ,  C30B25/10

CPC classification number: C23C16/274 ,  C23C16/02 ,  C23C16/4581 ,  C30B25/105

Abstract: A method for making a field emitter comprising the steps of providing a projection; electrically biasing the projection; and exposing the electrically biased projection to a hydrocarbon containing plasma to form a layer of diamond nuclei on the projection. The diamond nuclei are relatively inert and have a high nucleation density. The projection is preferably a material capable of forming a carbide, such as (111) oriented silicon. Refractory metals may also be used for the projection. The electrical biasing is preferably at a voltage in a range of about -150 to -250 volts. The hydrocarbon containing plasma preferably comprises a plasma including about 2 to 5% by weight of methane in hydrogen. An intervening carbide layer is preferably formed at a surface of the projection and underlying the layer of diamond nuclei. The field emitter produced by the method and having a relatively high diamond nucleation density is also disclosed.

Abstract translation: 一种用于制造场发射器的方法，包括以下步骤：提供投影; 电偏置投影; 并将电偏置的投影暴露于含烃等离子体，以在投影上形成金刚石核层。 金刚石核相对惰性且成核密度高。 突起优选是能够形成碳化物的材料，例如（111）取向的硅。 耐火金属也可用于投影。 电偏压优选为约-150至-250伏特的电压。 含有烃的等离子体优选包含含氢约2-5重量％的甲烷的等离子体。 优选地，在突起的表面和金刚石核层的下方形成中间碳化物层。 还公开了通过该方法制备并具有相对高的金刚石成核密度的场发射体。

公开(公告)号：US20120122736A1

公开(公告)日：2012-05-17

申请号：US13201181

申请日：2010-02-11

Applicant: R. Michael Angelo ,  April S. Brown ,  Scott Wolter ,  William V. Lampert

Inventor： R. Michael Angelo ,  April S. Brown ,  Scott Wolter ,  William V. Lampert

IPC: G01N27/00 ,  C40B40/10 ,  H01L21/00 ,  G01N27/22 ,  G01N27/04 ,  C12Q1/70 ,  C12M1/34 ,  G01N27/02

CPC classification number: G01N33/5438 ,  Y10T29/41

Abstract: A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.

Abstract translation: 一种传感器，包括电耦合到III-V族半导体材料的电子电路，例如砷化铟（InAs）和与III-V族半导体材料接触的抗体。 传感器在抗体 - 抗原结合事件时产生半导体电性能的可测量的N变化。 电子设备可测量的电气特性可包括电阻率，电容，阻抗和电感。 使用本发明的传感器检测抗原的方法。 使用本发明的传感器检测分析物与刺激物的反应的方法。 传感器阵列包括本发明的多个传感器。

公开(公告)号：US09958442B2

公开(公告)日：2018-05-01

申请号：US13201181

申请日：2010-02-11

Applicant: R. Michael Angelo ,  April S. Brown ,  Scott Wolter ,  William V. Lampert

Inventor： R. Michael Angelo ,  April S. Brown ,  Scott Wolter ,  William V. Lampert

IPC: G01N33/53 ,  G01N33/543

CPC classification number: G01N33/5438 ,  Y10T29/41

Abstract: A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.