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1.发明授权Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US07799510B2
公开(公告)日：2010-09-21
申请号：US12603055
申请日：2009-10-21
IPC分类号： G03C5/00
摘要： A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
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2.发明申请Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US20060134532A1
公开(公告)日：2006-06-22
申请号：US11287826
申请日：2005-11-28
摘要： A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 提供一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
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3.发明申请METHOD FOR CORRECTING MASK PATTERN, PHOTOMASK, METHOD FOR FABRICATING PHOTOMASK, ELECTRON BEAM WRITING METHOD FOR FABRICATING PHOTOMASK, EXPOSURE METHOD, SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权用于校正掩模图案的方法，光电子学，制造光电子能力的方法，用于制造光电子束的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US20100038798A1
公开(公告)日：2010-02-18
申请号：US12603055
申请日：2009-10-21
IPC分类号： H01L23/48 , H01L21/302
摘要： A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
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公开(公告)号：US20070283313A1
公开(公告)日：2007-12-06
申请号：US11735778
申请日：2007-04-16
IPC分类号： G06F17/50
CPC分类号： H01L21/32139 , G03F1/30 , G03F1/70 , H01L21/0274
摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。
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公开(公告)号：USD480177S1
公开(公告)日：2003-09-30
申请号：US29142459
申请日：2001-05-25
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6.发明授权Original plate evaluation method, computer readable storage medium, and original plate manufacturing method 有权原版评估方法，计算机可读存储介质和原版制版方法公开(公告)号：US08438527B2
公开(公告)日：2013-05-07
申请号：US13426965
申请日：2012-03-22
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/84 , G03F7/70625
摘要： According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision.
摘要翻译： 根据一个实施例，公开了原版评估方法。 原版包括基板和N形图案，其形状彼此不同。 该方法包括基于第一准则从N个图案中选择N1个图案，获得N1个图案的测量值，执行所获得的测量值是否满足第一指定值，根据第二准则从N个图案中选择N2个图案，预测形状 对应于N2图案的传送图案，执行预测形状是否满足第二规格值的判定，以及基于该判定来评估印版。
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公开(公告)号：US07541117B2
公开(公告)日：2009-06-02
申请号：US11735778
申请日：2007-04-16
CPC分类号： H01L21/32139 , G03F1/30 , G03F1/70 , H01L21/0274
摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.
摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。
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8.发明申请ORIGINAL PLATE EVALUATION METHOD, COMPUTER READABLE STORAGE MEDIUM, AND ORIGINAL PLATE MANUFACTURING METHOD 有权原始评估方法，计算机可读存储介质和原始制版方法公开(公告)号：US20130055172A1
公开(公告)日：2013-02-28
申请号：US13426965
申请日：2012-03-22
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G03F1/84 , G03F7/70625
摘要： According to one embodiment, an original plate evaluation method is disclosed. The original plate includes a substrate and N patterns differing from one another in shape. The method includes selecting N1 patterns from the N patterns based on first criterion, obtaining measured values for the N1 patterns, performing a decision whether the obtained measured values satisfy first specification value, selecting N2 patterns from the N patterns based on second criterion, predicting shapes of transfer patterns corresponding to N2 patterns, performing a decision whether the predicted shapes satisfy second specification value, and evaluating the plate based on the decision.
摘要翻译： 根据一个实施例，公开了原版评估方法。 原版包括基板和N形图案，其形状彼此不同。 该方法包括基于第一准则从N个图案中选择N1个图案，获得N1个图案的测量值，执行所获得的测量值是否满足第一指定值，根据第二准则从N个图案中选择N2个图案，预测形状 对应于N2图案的传送图案，执行预测形状是否满足第二规格值的判定，以及基于该判定来评估印版。
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公开(公告)号：USD665752S1
公开(公告)日：2012-08-21
申请号：US29414729
申请日：2012-03-02
申请人： Hajime Fukushima , Satomi Nakamura
设计人： Hajime Fukushima , Satomi Nakamura
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10.发明授权Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device 有权用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法公开(公告)号：US07767364B2
公开(公告)日：2010-08-03
申请号：US11287826
申请日：2005-11-28
IPC分类号： G03F1/00
摘要： A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
摘要翻译： 提供一种用于校正要在半导体器件制造工艺的光刻步骤中使用的光掩模上形成的掩模图案的方法。 该方法包括以下步骤：从掩模图案提取具有光学隔离部分的隔离图案，并以与隔离图案的隔离部分平行延伸并具有终端的相邻图案提供从终端延伸的延伸部分 在隔离图案的隔离部分的隔离部分沿隔离图案的隔离部分延伸的方向旁边。
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