公开(公告)号：US20070283313A1

公开(公告)日：2007-12-06

申请号：US11735778

申请日：2007-04-16

申请人： Kazuhisa Ogawa ,  Satomi Nakamura ,  Kohichi Nakayama

发明人： Kazuhisa Ogawa ,  Satomi Nakamura ,  Kohichi Nakayama

IPC分类号： G06F17/50

CPC分类号： H01L21/32139 ,  G03F1/30 ,  G03F1/70 ,  H01L21/0274

摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。

公开(公告)号：US20060143172A1

公开(公告)日：2006-06-29

申请号：US10543968

申请日：2004-02-04

申请人： Isao Ashida ,  Kohichi Nakayama

发明人： Isao Ashida ,  Kohichi Nakayama

IPC分类号： G06F17/30

CPC分类号： G03F1/20

摘要： Based on design data 151 and mask characteristic data 152 indicating at least the characteristics of a complementary stencil mask, generating alignment marks, designing membrane shapes, performing PUF division and boundary processing, complementarily dividing the mask, stitching, arranging complementary patterns, verifying pattern shapes, making corrections in the membrane, configuring the mask, verifying exposure, making corrections by inverting the mask, verifying the results of correction, converting the data, and thereby generating the drawing membrane data and drawing pattern data.

摘要翻译： 基于设计数据151和至少指示互补模板掩模的特征的掩模特征数据152，产生对准标记，设计膜形状，执行PUF划分和边界处理，互补地划分掩模，缝合，布置互补图案，验证图案形状 ，对膜进行校正，配置掩模，验证曝光，通过翻转掩模进行校正，验证校正结果，转换数据，从而生成绘图膜数据和绘制图案数据。

公开(公告)号：US09057682B2

公开(公告)日：2015-06-16

申请号：US13613398

申请日：2012-09-13

申请人： Kohichi Nakayama ,  Kenji Osaki ,  Hisashi Matsuda ,  Hitoshi Sakakida ,  Toshio Hirano ,  Toshiaki Hirate ,  Sueyoshi Mizuno ,  Ikuo Saito

发明人： Kohichi Nakayama ,  Kenji Osaki ,  Hisashi Matsuda ,  Hitoshi Sakakida ,  Toshio Hirano ,  Toshiaki Hirate ,  Sueyoshi Mizuno ,  Ikuo Saito

IPC分类号： G01N29/12 ,  G01N29/04 ,  G01N29/00 ,  F01D5/16 ,  F01D21/00 ,  G01H3/04 ,  G01H3/10

CPC分类号： G01N29/12 ,  F01D5/16 ,  F01D21/003 ,  F05D2220/31 ,  G01H3/04 ,  G01H3/10

摘要： According to the embodiment, there is provided a blade vibration measuring apparatus, having, a contactless displacement sensor which outputs a displacement measurement signal as measuring a displacement of a turbine moving blade in a rotation axis direction, a blade top position identifying device which outputs a blade top position identification signal to identify a top position based on a distance between the contactless displacement sensor and the top position of the turbine moving blade as receiving the displacement measurement signal output from the contactless displacement sensor, and a blade vibration calculating device which calculates vibration amplitude and a vibration frequency of the turbine moving blade based on temporal variation of the distance between the contactless displacement sensor and the top position of the turbine moving blade as receiving the blade top position identification signal output from the blade top position identifying device.

摘要翻译： 根据本实施方式，提供一种叶片振动测量装置，具有：无级位移传感器，其输出测定涡轮机动叶片沿旋转轴方向的位移的位移测量信号;叶片顶部位置识别装置，其输出 叶片顶部位置识别信号，用于当接收从非接触位移传感器输出的位移测量信号时基于无接触位移传感器和涡轮机动叶片的顶部位置之间的距离来识别顶部位置;以及叶片振动计算装置，其计算振动 基于从叶片顶部位置识别装置输出的叶片顶部位置识别信号，基于非接触位移传感器与涡轮机动叶片的顶部位置之间的距离的时间变化，涡轮机动叶片的振幅和振动频率。

公开(公告)号：US07802225B2

公开(公告)日：2010-09-21

申请号：US12026604

申请日：2008-02-06

申请人： Kaoru Koike ,  Kohichi Nakayama

发明人： Kaoru Koike ,  Kohichi Nakayama

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating electric characteristics of the gate; determining a gate length of a rectangular gate having electric characteristics equivalent to the calculated electric characteristics; calculating a corrective coefficient for describing an associated relationship between a statistical value of the extracted gate length distribution and the determined gate length; extracting a gate length distribution of a gate of a transistor by printing the design pattern, and calculating a gate length distribution representative value from the statistical value of the gate length distribution using the calculated corrective coefficient; and correcting the design pattern so that the calculated gate length distribution representative value will be a specification value.

摘要翻译： 在本发明中，提供了一种光学邻近校正方法，包括以下步骤：从要形成在晶片上的晶体管的栅极的图案形状提取栅极的栅极长度分布; 计算门的电特性; 确定具有与所计算的电特性相当的电特性的矩形栅极的栅极长度; 计算用于描述所提取的栅极长度分布的统计值与所确定的栅极长度之间的关联关系的校正系数; 通过印刷设计图案来提取晶体管的栅极的栅极长度分布，以及使用计算的校正系数从栅极长度分布的统计值计算栅极长度分布代表值; 并且校正设计图案，使得计算的栅极长度分布代表值将是规格值。

公开(公告)号：US07541117B2

公开(公告)日：2009-06-02

申请号：US11735778

申请日：2007-04-16

申请人： Kazuhisa Ogawa ,  Satomi Nakamura ,  Kohichi Nakayama

发明人： Kazuhisa Ogawa ,  Satomi Nakamura ,  Kohichi Nakayama

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： H01L21/32139 ,  G03F1/30 ,  G03F1/70 ,  H01L21/0274

摘要： Disclosed herein is a mask pattern generating method for generating a mask pattern to be formed in a Levenson phase shift mask used in a light exposure process for exposing a photoresist film formed on a fabricated film to be patterned into a conductive layer to light when the conductive layer is patterned by photolithography, the conductive layer including a gate electrode formed in an active region extending in a first direction in a wafer in such a manner as to extend in a second direction orthogonal to the first direction, the mask pattern generating method including: a phase shifter arranging step; a shifter pattern image obtaining step; a trim pattern image obtaining step; and a phase shifter elongating step.

摘要翻译： 本文公开了一种掩模图案生成方法，用于产生将在用于将形成在待图案化的制造膜上的形成在其上的光致抗蚀剂膜暴露于导电层中的莱文森相移掩模中形成的掩模图案，以在导电 层通过光刻法图案化，所述导电层包括形成在沿晶片的第一方向延伸的有源区域中的栅电极，其方式为在与第一方向正交的第二方向上延伸，掩模图案生成方法包括： 移相器布置步骤; 移位图案图像获取步骤; 修剪图案图像获取步骤; 和移相器伸长步骤。

公开(公告)号：US07010434B2

公开(公告)日：2006-03-07

申请号：US10819969

申请日：2004-04-08

申请人： Isao Ashida ,  Kohichi Nakayama

发明人： Isao Ashida ,  Kohichi Nakayama

IPC分类号： G01B3/00 ,  G01B5/00

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A complementary division condition determining method and program and a complementary division method able to propose the optimum complementary division conditions for suppressing pattern displacement and mask destruction, wherein an internal stress of a mask is determined based on a displacement of a peripheral mark in a case when forming an opening in the mask and this value is used for first analysis (step ST12), pattern displacement and stress concentration occurring due to openings of split patterns are analyzed based on a first analysis model in a first analysis (step ST13), and a displacement due to external force of the membrane between the split patterns is analyzed in a second analysis (step ST14).

摘要翻译： 一种互补分割条件确定方法和程序以及能够提出用于抑制图案位移和掩模破坏的最佳互补分割条件的互补分割方法，其中，基于周边标记的位移来确定掩模的内部应力， 在掩模中形成开口，并且该值用于第一分析（步骤ST12），基于第一分析中的第一分析模型（步骤ST 13）分析由于分割图案的开口而产生的图案位移和应力集中， 并且在第二分析中分析由于分离图案之间的膜的外力引起的位移（步骤ST14）。

公开(公告)号：US20130247671A1

公开(公告)日：2013-09-26

申请号：US13613398

申请日：2012-09-13

申请人： Kohichi Nakayama ,  Kenji Osaki ,  Hisashi Matsuda ,  Hitoshi Sakakida ,  Toshio Hirano ,  Toshiaki Hirate ,  Sueyoshi Mizuno ,  Ikuo Saito

发明人： Kohichi Nakayama ,  Kenji Osaki ,  Hisashi Matsuda ,  Hitoshi Sakakida ,  Toshio Hirano ,  Toshiaki Hirate ,  Sueyoshi Mizuno ,  Ikuo Saito

IPC分类号： G01N29/12

CPC分类号： G01N29/12 ,  F01D5/16 ,  F01D21/003 ,  F05D2220/31 ,  G01H3/04 ,  G01H3/10

摘要： According to the embodiment, there is provided a blade vibration measuring apparatus, having, a contactless displacement 5 sensor which outputs a displacement measurement signal as measuring a displacement of a turbine moving blade in a rotation axis direction, a blade top position identifying device which outputs a blade top position identification signal to identify a top position based on a distance between the contactless displacement sensor 10 and the top position of the turbine moving blade as receiving the displacement measurement signal output from the contactless displacement sensor, and a blade vibration calculating device which calculates vibration amplitude and a vibration frequency of the turbine moving blade based on temporal variation of the distance 15 between the contactless displacement sensor and the top position of the turbine moving blade as receiving the blade top position identification signal output from the blade top position identifying device.

摘要翻译： 根据本实施方式，提供一种叶片振动测定装置，具有：非旋转位移传感器，其输出作为测量涡轮机动叶片在旋转轴方向上的位移的位移测量信号;叶片顶部位置识别装置，其输出 叶片顶部位置识别信号，用于在接收从非接触位移传感器输出的位移测量信号时基于非接触位移传感器10与涡轮机动叶片的顶部位置之间的距离来识别顶部位置;以及叶片振动计算装置， 基于从叶片顶部位置识别装置输出的叶片顶部位置识别信号，基于非接触位移传感器和涡轮机动叶片的顶部位置之间的距离15的时间变化来计算涡轮机动叶片的振动振幅和振动频率 。

公开(公告)号：US20080263483A1

公开(公告)日：2008-10-23

申请号：US12026604

申请日：2008-02-06

申请人： Kaoru Koike ,  Kohichi Nakayama

发明人： Kaoru Koike ,  Kohichi Nakayama

IPC分类号： G06F17/50 ,  H01L21/66

CPC分类号： G03F1/36 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating electric characteristics of the gate; determining a gate length of a rectangular gate having electric characteristics equivalent to the calculated electric characteristics; calculating a corrective coefficient for describing an associated relationship between a statistical value of the extracted gate length distribution and the determined gate length; extracting a gate length distribution of a gate of a transistor by printing the design pattern, and calculating a gate length distribution representative value from the statistical value of the gate length distribution using the calculated corrective coefficient; and correcting the design pattern so that the calculated gate length distribution representative value will be a specification value.

摘要翻译： 在本发明中，提供了一种光学邻近校正方法，包括以下步骤：从要形成在晶片上的晶体管的栅极的图案形状提取栅极的栅极长度分布; 计算门的电特性; 确定具有与所计算的电特性相当的电特性的矩形栅极的栅极长度; 计算用于描述所提取的栅极长度分布的统计值与所确定的栅极长度之间的关联关系的校正系数; 通过印刷设计图案来提取晶体管的栅极的栅极长度分布，以及使用计算的校正系数从栅极长度分布的统计值计算栅极长度分布代表值; 并且校正设计图案，使得计算的栅极长度分布代表值将是规格值。