发明申请
US20060134532A1 Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device
有权
用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法
- 专利标题： Method for correcting mask pattern, photomask, method for fabricating photomask, electron beam writing method for fabricating photomask, exposure method, semiconductor device, and method for fabricating semiconductor device
- 专利标题（中）： 用于校正掩模图案，光掩模，用于制造光掩模的方法，用于制造光掩模的电子束写入方法，曝光方法，半导体器件和用于制造半导体器件的方法
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申请号： US11287826申请日： 2005-11-28
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公开(公告)号： US20060134532A1公开(公告)日： 2006-06-22
- 发明人: Kazuhisa Ogawa , Satomi Nakamura , Kazuyoshi Kawahara
- 申请人： Kazuhisa Ogawa , Satomi Nakamura , Kazuyoshi Kawahara
- 优先权： JPP2004-345908 20041130
- 主分类号： G03C5/00
- IPC分类号： G03C5/00 ; G06F17/50 ; G03F1/00
摘要：
A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
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