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1.发明授权公开(公告)号：US12119742B2
公开(公告)日：2024-10-15
申请号：US17690034
申请日：2022-03-09
发明人： Osamu Ohtake , Ryuichi Furukoshi
CPC分类号： H02M1/4208 , H02M3/335
摘要： An integrated circuit for digitally controlling a critical mode power factor correction (PFC) circuit according to one or more embodiments may include: an output voltage detector and a switching current detector; an A/D converter and a sample and hold circuit that perform analog-to-digital conversion of an output signal of the output voltage detector and the switching current detector; an arithmetic unit that performs calculation based on the output signal of the A/D converter and generates a pulse signal to turn on/off a switching device of the PFC circuit; a correction value calculator that calculates, based on a switching frequency of the PFC circuit, a correction value for linearly correcting the output signal of the A/D converter; and an adder that adds the correction value to the output signal of the A/D converter to correct the output signal of the A/D converter and inputs the corrected output signal to the arithmetic unit.
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公开(公告)号：US12039291B2
公开(公告)日：2024-07-16
申请号：US17860142
申请日：2022-07-08
发明人： Naohiko Shimoyama
CPC分类号： G06F7/588 , G06F11/0757
摘要： An abnormality detection circuit and method of detecting an abnormality in a CPU is disclosed that may include counting a count value from an initial value to a timeout value; storing a seed value readable from the CPU; generating a key value for verification by performing a specified arithmetic processing on the seed value; waiting for a key value to be written by the CPU; comparing the key value written by the CPU with the key value for verification; and when the count value is equal to the timeout value without the counter being reset, in response to the key value and the key value for verification matching, resetting the counter and storing the seed value to be determined at the time of resetting the counter in the seed value storage section.
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公开(公告)号：US11824554B2
公开(公告)日：2023-11-21
申请号：US17560329
申请日：2021-12-23
发明人： Hideki Hayashi
IPC分类号： H03M1/34
CPC分类号： H03M1/34
摘要： An analog-to-digital converter is disclosed that converts an input analog potential to a digital conversion value. An analog-to-digital converter according to one or more embodiments may include a comparator that compares the input analog potential with a reference potential; and a conversion circuit that measures comparison operation time from a start to an end of a comparison operation by the comparator and outputs the digital conversion value according to the measured comparison operation time and a comparison result by the comparator.
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公开(公告)号：US20230238434A1
公开(公告)日：2023-07-27
申请号：US17709735
申请日：2022-03-31
发明人： Hironori AOKI
CPC分类号： H01L29/402 , H01L29/063 , H01L29/7823
摘要： A semiconductor device according to one or more embodiments may include: on a semiconductor substrate, a high voltage circuit region; a transistor element region; an isolation region that elementally isolates the transistor element region from the high voltage circuit region; and a capacitively coupled field plate including plural lines of conductors, wherein the capacitively coupled field plate is provided to extend circumferentially along an outer circumferential portion of the high voltage circuit region and across the transistor element region, in a plan view of the semiconductor device, and one or more dividing sections divides at least one of the plural lines of conductors in the capacitively coupled field plate to make the at least one line discontinuous.
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公开(公告)号：US20230163760A1
公开(公告)日：2023-05-25
申请号：US17534496
申请日：2021-11-24
发明人： Katsuyuki TORII
IPC分类号： H03K17/567 , H01L29/739 , H01L49/02 , H01L27/06
CPC分类号： H03K17/567 , H01L29/7397 , H01L28/20 , H01L27/0658
摘要： A semiconductor device according to one or more embodiments may include a drive circuit comprising: a gate control circuit that generates a gate control signal; a first resistor comprising a first electrode electrically connected to the gate control circuit and a second electrode; and a second resistor comprising a first electrode electrically connected to the gate control circuit and a second electrode that is not electrically connected to the second electrode of the first resistor; wherein the second resistor comprises a resistance value greater than that of the first resistor; an IGBT circuit comprising: a first IGBT cell electrically connected to the second electrode of the first resistor; and a second IGBT cell electrically connected to the second electrode of the second resistor.
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公开(公告)号：US20230006111A1
公开(公告)日：2023-01-05
申请号：US17944263
申请日：2022-09-14
发明人： Yousuke UMETSU , Kazuyoshi HAGA
摘要： A dimming agent according to one or more embodiments is disclosed that may include at least one of terbium, praseodymium, manganese, titanium. A diffuse reflection intensity of the dimming agent in a wavelength of from 400 nm to 750 nm may be 80% or less.
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公开(公告)号：US11522075B2
公开(公告)日：2022-12-06
申请号：US17160744
申请日：2021-01-28
发明人： Yuuichi Oshino
IPC分类号： H01L29/739 , H01L21/225 , H01L29/08 , H01L29/66
摘要： A semiconductor device according to one or more embodiments may include a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type with a higher impurity concentration than an impurity concentration of the first semiconductor region, the second semiconductor region being provided on a first principal surface of the first semiconductor region, a third semiconductor region of a second conductivity type provided on an upper surface of the second semiconductor region, the third semiconductor region being doped with an impurity in accordance with an impurity concentration profile including peaks along a film thickness direction, a fourth semiconductor region of the first conductivity type provided on an upper surface of the third semiconductor region.
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公开(公告)号：US20220123761A1
公开(公告)日：2022-04-21
申请号：US17563109
申请日：2021-12-28
发明人： Hideki Hayashi
IPC分类号： H03M1/46
摘要： An analog-digital conversion circuit is disclosed for comparing a comparison potential with a reference potential generated based on a reference power supply to convert a comparison potential to a digital value. An analog-to-digital converter generates the comparison potential based on a sampled and held input potential, the digital value, and the reference power supply. A current amount control unit controls current amount flowing to the current amount control element in each bit circuit. In response to second switches of the bit circuits being turned on in order from the upper bit in each bit circuit by the digital value, the current amount control unit applies a current control potential to the current amount control element in any of the bit circuits that the noise current is more than allowable value while the noise current proportional to the charge flowing from the capacitor is more than the allowable value.
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公开(公告)号：US11245006B2
公开(公告)日：2022-02-08
申请号：US16724862
申请日：2019-12-23
发明人： Dosi Dosev , Don Rankila , Tatsuya Kamimura , Shunsuke Fukunaga , Steven L. Kosier , Peter West
摘要： A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern. The exterior trench pattern includes a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material, and the interior trench pattern includes a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material.
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公开(公告)号：US20210225814A1
公开(公告)日：2021-07-22
申请号：US16309968
申请日：2017-10-30
发明人： Takaya UENO , Hitoshi MUROFUSHI
IPC分类号： H01L25/075 , H01L33/50 , H01L33/32
摘要： A light emitting device (1) includes: three or more light emitting units (10, 20, 30) that individually include blue light emitting element, a wavelength range of the blue light emitting element accommodated in respective packages being different from each other. The light emitting device mixes output lights from the light emitting units (10, 20, 30) to output white light of a predetermined chromaticity. In an xy chromaticity diagram, the chromaticity of the output light from each of light emitting units (10, 20, 30) is located at a distance from the predetermined chromaticity. The difference between the chromaticity of the output light from each of the light emitting units (10, 20, 30) and the predetermined chromaticity is not greater than 0.04.
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