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    Multiple directional scans of test structures on semiconductor integrated circuits
    4.
    发明授权
    Multiple directional scans of test structures on semiconductor integrated circuits 有权
    半导体集成电路测试结构的多方向扫描

    公开(公告)号：US07012439B2

    公开(公告)日：2006-03-14

    申请号：US11058943

    申请日：2005-02-15

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    IPC分类号： G01R31/304

    CPC分类号： H01L22/34 ,  G01N21/66 ,  G01N21/956 ,  G01N23/04 ,  G01R31/2884 ,  G01R31/307 ,  H01J2237/2817 ,  Y10S977/849

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    Methods and systems for predicting IC chip yield
    6.
    发明授权
    Methods and systems for predicting IC chip yield 有权
    用于预测IC芯片产量的方法和系统

    公开(公告)号：US06751519B1

    公开(公告)日：2004-06-15

    申请号：US10281433

    申请日：2002-10-24

    申请人： Akella V. S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

    发明人： Akella V. S. Satya ,  Li Song ,  Robert Thomas Long ,  Kurt H. Weiner

    IPC分类号： G06F1900

    CPC分类号： H01L22/20 ,  G01R31/2894 ,  G01R31/307 ,  H01L22/14 ,  H01L22/34

    摘要： Disclosed are methods and apparatus for efficiently managing IC chip yield learning. In general terms, as each wafer lot moves through fabrication, yield information is obtained from each set of test structures for a particular process or defect mechanism. The nature of the yield information is such that it may be used directly or indirectly to predict product wafer test yield. In one implementation, the yield information includes a systematic yield (Y0), a defect density (DD), and a defect clustering factor (&agr;) determined based on the inspected test structure's yield. A running average of the yield information for each process or defect mechanism is maintained as each wafer lot is processed. As a particular wafer lot moves through the various processes, a product wafer-sort test yield may be predicted at any stage in the fabrication process based on the running-average yield information maintained for previously fabricated wafer lots.

    摘要翻译： 公开了用于有效管理IC芯片产量学习的方法和装置。 一般来说，随着每个晶片批次移动通过制造，从特定工艺或缺陷机制的每组测试结构获得产量信息。 产量信息的性质可以直接或间接地用于预测产品晶圆测试产量。 在一个实施方案中，产量信息包括基于检验的测试结构的产量确定的系统产量（Y0），缺陷密度（DD）和缺陷聚类因子（α）。 当处理每个晶片批时，维持每个处理或缺陷机制的产量信息的运行平均值。 随着特定的晶片批次移动通过各种工艺，可以基于为先前制造的晶片批次保持的运行平均产量信息，在制造过程的任何阶段预测产品晶圆分选测试产量。

    Multiple directional scans of test structures on semiconductor integrated circuits
    8.
    发明授权
    Multiple directional scans of test structures on semiconductor integrated circuits 有权
    半导体集成电路测试结构的多方向扫描

    公开(公告)号：US07656170B2

    公开(公告)日：2010-02-02

    申请号：US11675013

    申请日：2007-02-14

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Padma A. Satya, legal representative ,  Robert Thomas Long ,  David J. Walker

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V. S. Satya ,  Robert Thomas Long ,  David J. Walker

    IPC分类号： G01R31/02

    CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。

    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS
    9.
    发明申请
    MULTIPLE DIRECTIONAL SCANS OF TEST STRUCTURES ON SEMICONDUCTOR INTEGRATED CIRCUITS 有权
    半导体集成电路测试结构的多个方向扫描

    公开(公告)号：US20080237487A1

    公开(公告)日：2008-10-02

    申请号：US11675013

    申请日：2007-02-14

    申请人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    发明人： Gustavo A. Pinto ,  Brian C. Leslie ,  David L. Adler ,  Akella V.S. Satya ,  Robert Thomas Long ,  David J. Walker ,  Padma A. Satya

    IPC分类号： G21G5/00

    CPC分类号： H01L23/5226 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the sample are found as a result of the first scan, and the position of one or more of the found defects is determined from the second scan. In a specific embodiment, the sample includes a test structure having a plurality of test elements thereon. A first portion of the test elements is exposed to the beam during the first scan to identify test elements having defects, and a second portion of the test elements is exposed during the second scan to isolate and characterize the defect.

    摘要翻译： 公开了一种检查样品的方法。 用至少一个粒子束沿第一方向扫描样品。 用至少一个粒子束在第二个方向上扫描样品。 第二方向与第一方向成一个角度。 作为第一扫描的结果，发现样品的每个区域的缺陷数，并且从第二次扫描确定发现的一个或多个缺陷的位置。 在具体实施例中，样本包括其上具有多个测试元件的测试结构。 测试元件的第一部分在第一次扫描期间暴露于光束以识别具有缺陷的测试元件，并且第二部分测试元件在第二次扫描期间暴露以分离和表征缺陷。