公开(公告)号：US20110051507A1

公开(公告)日：2011-03-03

申请号：US12552246

申请日：2009-09-01

Applicant: Joy Sarkar ,  Robert Gleixner

Inventor： Joy Sarkar ,  Robert Gleixner

IPC: G11C11/00 ,  G06F12/00 ,  G06F12/02

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349

Abstract: Subject matter disclosed herein relates to enhancing an operational lifespan of non-volatile memory.

Abstract translation: 本文公开的主题涉及增强非易失性存储器的操作寿命。

公开(公告)号：US20050079651A1

公开(公告)日：2005-04-14

申请号：US11001871

申请日：2004-12-01

Applicant: Robert Gleixner ,  Donald Danielson ,  Patrick Paluda ,  Rajan Naik

Inventor： Robert Gleixner ,  Donald Danielson ,  Patrick Paluda ,  Rajan Naik

IPC: H01L21/603 ,  H01L23/485 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/14 ,  Y10T428/1291 ,  Y10T428/24248 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48744

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract translation: 引线键合结构包括形成在微电子管芯的表面上或其中的铜焊盘。 导电层被包括在与铜焊盘接触的位置，并且接合线接合到导电层。 导电层由材料形成，以在氧化环境和温度高达至少约350℃的环境中的至少一个中提供接合线和铜焊盘之间的稳定接触。

公开(公告)号：US08036016B2

公开(公告)日：2011-10-11

申请号：US12552246

申请日：2009-09-01

Applicant: Joy Sarker ,  Robert Gleixner

Inventor： Joy Sarker ,  Robert Gleixner

IPC: G11B5/10

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349

Abstract: Subject matter disclosed herein relates to enhancing an operational lifespan of non-volatile memory.

Abstract translation: 本文公开的主题涉及增强非易失性存储器的操作寿命。