公开(公告)号：US08035927B2

公开(公告)日：2011-10-11

申请号：US12021085

申请日：2008-01-28

Applicant: Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

Inventor： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

Abstract translation: 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。

公开(公告)号：US08018765B2

公开(公告)日：2011-09-13

申请号：US12553670

申请日：2009-09-03

Applicant: Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

Inventor： Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

IPC: G11C11/15 ,  G11C11/14

CPC classification number: G11C11/14 ,  G11C5/02 ,  G11C19/0808

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

Abstract translation: 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

公开(公告)号：US20100039849A1

公开(公告)日：2010-02-18

申请号：US12191956

申请日：2008-08-14

Applicant: Robert E. Fontana, JR. ,  Jordan A. Katine ,  Ching Hwa Tsang ,  Barry Stipe ,  Bruce D. Terris

Inventor： Robert E. Fontana, JR. ,  Jordan A. Katine ,  Ching Hwa Tsang ,  Barry Stipe ,  Bruce D. Terris

IPC: G11C11/15 ,  G11C11/14 ,  G11C11/00 ,  H01L21/00

CPC classification number: G11C11/15 ,  G11C5/02 ,  G11C11/1675 ,  H01L27/228

Abstract: Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.

Abstract translation: 公开了用于三维磁存储器的读/写元件。 一个实施例描述了集成读/写元件的阵列。 阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。 阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。 阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。 在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。 第一写入导体和第二写入导体在磁极周围形成电流环。

公开(公告)号：US07633718B2

公开(公告)日：2009-12-15

申请号：US11168070

申请日：2005-06-27

Applicant: Robert E. Fontana, Jr. ,  Stefan Maat

Inventor： Robert E. Fontana, Jr. ,  Stefan Maat

IPC: G11B5/48 ,  G11B21/16 ,  G11B5/33 ,  G11B5/127

CPC classification number: H01L43/08 ,  G11C11/14 ,  H01L43/12

Abstract: EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.

Abstract translation: 公开了EMR元件和制造EMR元件的方法。 EMR结构包括形成有源区的一个或多个层，例如二维电子气（2DEG）。 EMR结构具有第一侧表面，具有从EMR结构的主体向外延伸的多个引线突起和相对的第二侧表面。 引线突起用于形成EMR元件的电流和电压引线。 有源区域延伸穿过每个引线突起，并且可沿着每个引线突起的周边被接近。 沿着每个引线突起的周边形成导电材料，并沿周边与EMR结构的有源区接触。 引线突起和与每个引线突起的有源区接触的相应的导电材料形成用于EMR元件的引线，例如电流引线和电压引线。

公开(公告)号：US07606065B2

公开(公告)日：2009-10-20

申请号：US12116111

申请日：2008-05-06

Applicant: Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

Inventor： Robert E. Fontana, Jr. ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

IPC: G11C11/15 ,  G11C11/14

CPC classification number: G11C11/14 ,  G11C5/02 ,  G11C19/0808

Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

Abstract translation: 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

公开(公告)号：US20090258186A1

公开(公告)日：2009-10-15

申请号：US12101066

申请日：2008-04-10

Applicant: Robert E. Fontana, JR. ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand ,  Bruce David Terris

Inventor： Robert E. Fontana, JR. ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe ,  Timothy Carl Strand ,  Bruce David Terris

IPC: G03F7/00 ,  B32B3/10

CPC classification number: G11B5/314 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173 ,  G11B2005/0021 ,  Y10T428/24273

Abstract: A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface.

Abstract translation: 用于形成用于热辅助记录（TAR）盘驱动器中的多个滑动件的方法包括在将晶片切割成晶片之前在晶片表面上形成多个孔结构和可选地邻接的光通道的晶片级工艺 个人滑块 晶片具有布置成多个矩形区域的大致平坦的表面。 在每个矩形区域中，第一金属层沉积在晶片表面上，随后是一层辐射透射的孔隙材料，然后将其光刻图案化以限定孔的宽度，孔的宽度平行于矩形的长度 形状区域。 在孔材料的图案化层上沉积第二金属层。 然后将所得结构光刻图案化以限定孔结构，该孔结构包括由金属包围并具有与晶片表面正交的平行辐射入射面和出射面的孔隙材料。

公开(公告)号：US20090154027A1

公开(公告)日：2009-06-18

申请号：US11957466

申请日：2007-12-16

Applicant: Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jordan A. Katine ,  Neil Smith

Inventor： Hamid Balamane ,  Jeffrey R. Childress ,  Robert E. Fontana, JR. ,  Jordan A. Katine ,  Neil Smith

IPC: G11B5/33

CPC classification number: G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B2005/3996

Abstract: Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.

Abstract translation: 公开了传感器和相关的制造方法。 本文公开的读取传感器包括第一屏蔽层，包括反平行（AP）自由层的传感器堆叠以及设置在传感器堆叠上的绝缘材料。 通过传感器堆叠上方的绝缘材料形成孔，使得随后沉积的第二屏蔽件通过孔电耦合到传感器堆叠。 光圈的宽度控制注入到传感器叠层顶部的电流密度。 此外，可以形成硬偏置结构以电耦合到传感器堆叠。 传感器堆叠和硬偏置结构的电耦合允许电流在其通过传感器堆叠时横向展开，因此提供不均匀的电流密度。

公开(公告)号：US20080310055A1

公开(公告)日：2008-12-18

申请号：US11763962

申请日：2007-06-15

Applicant: Robert E. Fontana, JR. ,  Sergey Kiselev ,  Edward Hin Pong Lee ,  Kenneth Donald Mackay ,  Surya Narayan Pattanaik ,  Chie Ching Poon

Inventor： Robert E. Fontana, JR. ,  Sergey Kiselev ,  Edward Hin Pong Lee ,  Kenneth Donald Mackay ,  Surya Narayan Pattanaik ,  Chie Ching Poon

IPC: G11B5/33

CPC classification number: G11B5/40 ,  G11B5/4853

Abstract: The present invention provides methods and systems for repeatably creating and severing a short circuit to protect an electronic component from ESD. A short circuit may be formed between read sensor pads of a read sensor by depositing a shorting material on a magnetic head using a Laser Induced Forward Transfer (LIFT) process. The short circuit may be unshorted using a laser scan configured to sever the shorting material. In one embodiment, a shorting station may be provided to prevent spreading of the shorting material to undesired areas of the electronic component.

Abstract translation: 本发明提供了用于重复地创建和切断短路以保护电子部件免受ESD的方法和系统。 通过使用激光诱导正转（LIFT）工艺将短路材料沉积在磁头上，可以在读取传感器的读取传感器焊盘之间形成短路。 可以使用配置为切断短路材料的激光扫描来对该短路进行未调整。 在一个实施例中，可以提供短路站以防止短路材料扩散到电子部件的不期望的区域。

公开(公告)号：US07367111B2

公开(公告)日：2008-05-06

申请号：US11340263

申请日：2006-01-25

Applicant: Robert E. Fontana, Jr. ,  Jeffrey S. Lille

Inventor： Robert E. Fontana, Jr. ,  Jeffrey S. Lille

IPC: G11B5/127 ,  H04R31/00

CPC classification number: H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F41/302 ,  H01F41/325 ,  H01L29/66984 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

Abstract translation: 自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层 非磁性层，其中绝缘层和非磁性层包括反铁磁材料。 磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。 偏置层位于绝缘层和非磁性层之间。 偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。

公开(公告)号：US20080037182A1

公开(公告)日：2008-02-14

申请号：US11426908

申请日：2006-06-27

Applicant: Thomas Robert Albrecht ,  Robert E. Fontana ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

Inventor： Thomas Robert Albrecht ,  Robert E. Fontana ,  Bruce Alvin Gurney ,  Timothy Clark Reiley ,  Xiao Z. Wu

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G11B5/40

Abstract: A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive. Another possible programmable resistor uses a phase change material that can change between an amorphous high resistance state and a crystalline low resistance state upon the application of a certain heat treatments.

Abstract translation: 用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。 该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。 当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。 另一种可能的可编程电阻器使用相变材料，其可以在施加某种热处理时在非晶高电阻状态和结晶低电阻状态之间变化。