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    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield
    1.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield 有权
    电流垂直于平面（CPP）磁阻（MR）传感器，其参考层集成在磁屏蔽中

    公开(公告)号：US08514525B2

    公开(公告)日：2013-08-20

    申请号：US12881162

    申请日：2010-09-13

    Applicant: Jeffrey R. Childress ,  Jordan Asher Katine ,  Manfred Ernst Schabes

    Inventor： Jeffrey R. Childress ,  Jordan Asher Katine ,  Manfred Ernst Schabes

    IPC: G11B5/10 ,  G11B5/39

    CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

    Abstract: A current-perpendicular-to-the-plane magnetoresistive (CPP MR) sensor has a shield layers that also functions as the sensor's reference layer. In a CPP MR disk drive read head, the shield layer has a fixed magnetization oriented substantially parallel to the air-bearing surface (ABS) of the slider that supports the read head. The quiescent magnetization of the sensor free layer is oriented at an angle relative to the magnetization of the shield layer, preferably between 120 and 150 degrees, to optimize the sensor response to magnetic fields from the recorded data bits on the disk. The magnetization of the free layer is biased by a biasing structure that includes a ferromagnetic side biasing layer formed near the side edges of the free layer and a ferromagnetic back biasing layer that is recessed from the ABS and has a magnetization oriented generally orthogonal to the ABS.

    Abstract translation: 电流垂直于平面的磁阻（CPP MR）传感器具有也用作传感器参考层的屏蔽层。 在CPP MR磁盘驱动器读取头中，屏蔽层具有固定的磁化取向，该固定磁化基本上平行于支撑读取磁头的滑块的空气轴承表面（ABS）。 传感器自由层的静态磁化相对于屏蔽层的磁化方向成一定角度，优选地在120和150度之间，以优化传感器对磁盘上记录数据位的响应。 自由层的磁化由偏置结构偏置，该偏置结构包括形成在自由层的侧边缘附近的铁磁侧偏置层和从ABS凹陷的铁磁反向偏置层，并且具有大致正交于ABS的磁化 。

    CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same
    2.
    发明授权
    CPP read sensors having constrained current paths made of lithographically-defined conductive vias and methods of making the same 有权
    CPP读取具有由光刻定义的导电通孔制成的约束电流路径的传感器及其制造方法

    公开(公告)号：US07765675B2

    公开(公告)日：2010-08-03

    申请号：US11219108

    申请日：2005-09-01

    Applicant: Jeffrey Robinson Childress ,  Jordan Asher Katine

    Inventor： Jeffrey Robinson Childress ,  Jordan Asher Katine

    IPC: G11B5/187 ,  B44C1/22

    CPC classification number: H01F41/308 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/398 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49041

    Abstract: Current-perpendicular-to-plane (CPP) read sensors for magnetic heads having constrained current paths made of lithographically-defined conductive vias, and methods of making the same, are disclosed. In one example, a sensor stack structure which includes an electrically conductive spacer layer is formed over a first shield layer. An insulator layer is deposited over and adjacent the spacer layer, and a resist structure which exposes one or more portions of the insulator layer is formed over the insulator layer. With the resist structure in place, the exposed insulator layer portions are removed by etching to form one or more apertures through the insulator layer down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure.

    Abstract translation: 公开了具有由光刻定义的导电通孔制成的约束电流路径的磁头的电流垂直平面（CPP）读取传感器及其制造方法。 在一个示例中，包括导电间隔层的传感器堆叠结构形成在第一屏蔽层上。 绝缘体层沉积在间隔层之上并与其相邻，并且在绝缘体层上形成暴露绝缘体层的一个或多个部分的抗蚀剂结构。 在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体层部分，以形成穿过绝缘体层的一个或多个孔直到间隔层。 导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。

    Thermally assisted recording head with near field transducer having integral heatsink
    4.
    发明授权
    Thermally assisted recording head with near field transducer having integral heatsink 有权
    具有集成散热片的近场传感器的热辅助记录头

    公开(公告)号：US08339739B2

    公开(公告)日：2012-12-25

    申请号：US12807296

    申请日：2010-08-31

    Applicant: Hamid Balamane ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe

    Inventor： Hamid Balamane ,  Jordan Asher Katine ,  Neil Leslie Robertson ,  Barry Cushing Stipe

    IPC: G11B5/187

    CPC classification number: G11B5/314 ,  G11B5/3136 ,  G11B5/6088 ,  G11B2005/0021

    Abstract: A write head structure for use with thermally assisted recording is disclosed. Improved heat sinking is provided for removing thermal energy created by a ridge aperture near field light transducer. Metal films conduct heat away from the region near the ridge aperture to the high pressure air film at the ABS between the head and media. This heat is further dissipated by the media. The metal films have varying thickness to improve lateral conductivity and may be composed of Au combined with a harder metal such as Ru to improve wear characteristics at the ABS.

    Abstract translation: 公开了一种用于热辅助记录的写头结构。 提供改进的散热用于去除由场光传感器附近的脊孔产生的热能。 金属膜将热量从脊孔附近的区域传导到头部和介质之间的ABS处的高压空气膜。 这种热量被介质进一步消散。 金属膜具有不同的厚度以改善横向导电性，并且可以由Au与诸如Ru的较硬金属组合以提高ABS的磨损特性。

    Three-terminal spin-torque oscillator (STO)
    5.
    发明授权
    Three-terminal spin-torque oscillator (STO) 有权
    三端自旋转矩振荡器（STO）

    公开(公告)号：US08320080B1

    公开(公告)日：2012-11-27

    申请号：US13149419

    申请日：2011-05-31

    Applicant: Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

    Inventor： Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

    IPC: G11B5/127 ,  G11B5/187

    CPC classification number: H01F10/3254 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/3903 ,  G11B2005/0005 ,  H01F10/1936 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    Abstract: A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

    Abstract translation: 自旋转矩振荡器（STO）具有单个自由铁磁层，其形成具有非磁性导电间隔层的巨磁电阻（GMR）结构和具有隧道势垒层的隧道磁阻（TMR）结构的一部分。 STO具有三个电气端子，其连接到通过导电间隔层提供自旋转矩激励电流的电路和通过隧道势垒层的较小感测电流。 当STO用作磁场传感器时，激励电流使得自由层的磁化在没有外部磁场的情况下以固定的基频振荡。 耦合到感测电流的检测器响应于外部磁场检测自由层磁化振荡频率从基极频率的偏移。

    CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REFERENCE LAYER INTEGRATED IN MAGNETIC SHIELD
    6.
    发明申请
    CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REFERENCE LAYER INTEGRATED IN MAGNETIC SHIELD 有权
    具有参考层的电流 - 平面（CPP）磁传感器（MR）传感器集成在磁屏蔽

    公开(公告)号：US20120063035A1

    公开(公告)日：2012-03-15

    申请号：US12881162

    申请日：2010-09-13

    Applicant: Jeffrey R. Childress ,  Jordan Asher Katine ,  Manfred Ernst Schabes

    Inventor： Jeffrey R. Childress ,  Jordan Asher Katine ,  Manfred Ernst Schabes

    IPC: G11B5/127

    CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

    Abstract: A current-perpendicular-to-the-plane magnetoresistive (CPP MR) sensor has a shield layers that also functions as the sensor's reference layer. In a CPP MR disk drive read head, the shield layer has a fixed magnetization oriented substantially parallel to the air-bearing surface (ABS) of the slider that supports the read head. The quiescent magnetization of the sensor free layer is oriented at an angle relative to the magnetization of the shield layer, preferably between 120 and 150 degrees, to optimize the sensor response to magnetic fields from the recorded data bits on the disk. The magnetization of the free layer is biased by a biasing structure that includes a ferromagnetic side biasing layer formed near the side edges of the free layer and a ferromagnetic back biasing layer that is recessed from the ABS and has a magnetization oriented generally orthogonal to the ABS.

    Abstract translation: 电流垂直于平面的磁阻（CPP MR）传感器具有也用作传感器参考层的屏蔽层。 在CPP MR磁盘驱动器读取头中，屏蔽层具有固定的磁化取向，该固定磁化基本上平行于支撑读取磁头的滑块的空气轴承表面（ABS）。 传感器自由层的静态磁化相对于屏蔽层的磁化方向成一定角度，优选地在120和150度之间，以优化传感器对磁盘上记录数据位的响应。 自由层的磁化由偏置结构偏置，该偏置结构包括形成在自由层的侧边缘附近的铁磁侧偏置层和从ABS凹陷的铁磁反向偏置层，并且具有大致正交于ABS的磁化 。

    CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same
    9.
    发明授权
    CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers and method of making same 有权
    CPP读取传感器具有由具有周围的氧化金属子层的光刻定义的导电通孔制成的约束电流路径及其制造方法

    公开(公告)号：US07646570B2

    公开(公告)日：2010-01-12

    申请号：US11496604

    申请日：2006-07-31

    Applicant: Hardayal Singh Gill ,  Jordan Asher Katine ,  Alexander Zeltser

    Inventor： Hardayal Singh Gill ,  Jordan Asher Katine ,  Alexander Zeltser

    IPC: G11B5/39 ,  H04R31/00

    CPC classification number: G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01F41/306 ,  H01F41/308 ,  Y10T29/49046 ,  Y10T29/49052

    Abstract: Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.

    Abstract translation: 公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。 在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。 然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。 根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。 接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。 在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。 导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。 有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。 通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。

    THREE-TERMINAL SPIN-TORQUE OSCILLATOR (STO)
    10.
    发明申请
    THREE-TERMINAL SPIN-TORQUE OSCILLATOR (STO) 有权
    三端旋转振荡器（STO）

    公开(公告)号：US20120307404A1

    公开(公告)日：2012-12-06

    申请号：US13149419

    申请日：2011-05-31

    Applicant: Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

    Inventor： Patrick Mesquita Braganca ,  Bruce Alvin Gurney ,  Jordan Asher Katine

    IPC: G11B5/48 ,  H03B7/14

    CPC classification number: H01F10/3254 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/3903 ,  G11B2005/0005 ,  H01F10/1936 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    Abstract: A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

    Abstract translation: 自旋转矩振荡器（STO）具有单个自由铁磁层，其形成具有非磁性导电间隔层的巨磁电阻（GMR）结构和具有隧道势垒层的隧道磁阻（TMR）结构的一部分。 STO具有三个电气端子，其连接到通过导电间隔层提供自旋转矩激励电流的电路和通过隧道势垒层的较小感测电流。 当STO用作磁场传感器时，激励电流使得自由层的磁化在没有外部磁场的情况下以固定的基频振荡。 耦合到感测电流的检测器响应于外部磁场检测自由层磁化振荡频率从基极频率的偏移。

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