公开(公告)号：US20120195341A1

公开(公告)日：2012-08-02

申请号：US13439994

申请日：2012-04-05

Applicant: Thomas Dudley Boone, JR. ,  Timothy Carl Strand ,  Bruce David Terris

Inventor： Thomas Dudley Boone, JR. ,  Timothy Carl Strand ,  Bruce David Terris

IPC: H01S5/18

CPC classification number: G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/001 ,  H01S5/0014 ,  H01S5/1085 ,  H01S5/18 ,  H01S2301/14

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract translation: 具有内部偏振旋转的诸如水平腔表面发射激光器的激光器可用于硬盘驱动器中的热辅助记录。 可以通过在激光器内的小平面的两个光束反射来实现激光器的期望的偏振。 小面可以在单个离子束蚀刻步骤中形成。 激光可以用在热辅助记录头上，以产生与盘的磁道方向对齐的偏振光束。

公开(公告)号：US08035927B2

公开(公告)日：2011-10-11

申请号：US12021085

申请日：2008-01-28

Applicant: Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

Inventor： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Robert E. Fontana, Jr. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

Abstract translation: 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。

公开(公告)号：US20100165518A1

公开(公告)日：2010-07-01

申请号：US12345795

申请日：2008-12-30

Applicant: Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

Inventor： Thomas Dudley Boone, JR. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC: G11B5/33

CPC classification number: G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

Abstract: A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

Abstract translation: 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 施加栅极电压降低了电荷载流子的动量，这使得它们的移动更容易被存在磁场所改变，从而增加了传感器的灵敏度。

公开(公告)号：US20100163521A1

公开(公告)日：2010-07-01

申请号：US12345715

申请日：2008-12-30

Applicant: Hamid Balamane ,  Thomas Dudley Boone, JR. ,  Jordan Asher Katine ,  Barry Cushing Stipe

Inventor： Hamid Balamane ,  Thomas Dudley Boone, JR. ,  Jordan Asher Katine ,  Barry Cushing Stipe

IPC: B44C1/22 ,  B05D5/12

CPC classification number: G11B5/314 ,  G11B5/3163 ,  G11B5/6088 ,  G11B2005/0021

Abstract: A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself.

Abstract translation: 公开了一种在硬盘驱动器中制造用于热辅助记录应用的c孔径或E-antenna等离激元近场源的方法。 C孔径或E天线用于记录头部应用。 该技术采用电子束光刻，部分反应离子蚀刻和金属填充来构建c-孔。 该过程策略相对于c孔径切口对c孔径内径的自对准，所需的少量工艺步骤以及c孔口凹口本身的精确且一致的形状具有优于其它技术的优点。

公开(公告)号：US07466521B2

公开(公告)日：2008-12-16

申请号：US11411606

申请日：2006-04-25

Applicant: Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

Inventor： Thomas Dudley Boone, Jr. ,  Liesl Folks ,  Stefan Maat

IPC: G11B5/39

CPC classification number: G11B5/3993 ,  G11B2005/0016 ,  G11C11/14

Abstract: An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

Abstract translation: 具有不连续分流结构的非凡磁阻器件EMR。 不连续的分流结构提高了EMR器件的响应线性。 EMR器件包括EMR异质结构，其包括EMR有源层。 异质结构可以包括第一，第二和第三半导体层，第二层夹在第一和第三层之间。 中间或第二半导体层提供二维电子气。 异质结构具有第一和第二相对侧，一对电压引线和一对与结构的第一侧连接的电流引线。 不连续的分流结构与结构的第二侧连接，并且可以是一系列不连续的导电元件，例如半球状金元素的形式。

公开(公告)号：US20080278860A1

公开(公告)日：2008-11-13

申请号：US11747683

申请日：2007-05-11

Applicant: Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

Inventor： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Ernesto E. Marinero ,  Neil Smith

IPC: G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/398 ,  G11B5/3993 ,  G11C11/14 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

Abstract translation: 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。

公开(公告)号：US08634162B2

公开(公告)日：2014-01-21

申请号：US11683972

申请日：2007-03-08

Applicant: Christian Rene Bonhote ,  Thomas Dudley Boone, Jr. ,  Quang Le ,  Jui-Lung Li ,  Jeffrey S. Lille ,  Scott Arthur MacDonald ,  Neil Leslie Robertson ,  Xhavin Sinha ,  Petrus Antonius Van Der Heijden

Inventor： Christian Rene Bonhote ,  Thomas Dudley Boone, Jr. ,  Quang Le ,  Jui-Lung Li ,  Jeffrey S. Lille ,  Scott Arthur MacDonald ,  Neil Leslie Robertson ,  Xhavin Sinha ,  Petrus Antonius Van Der Heijden

IPC: G11B5/147

CPC classification number: G11B5/3146 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3166 ,  G11B5/3169

Abstract: A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head may also include a magnetic trailing shield that wraps around the main pole portion. The trailing shield can have a hack edge defining a trailing shield throat height that is either between the secondary flare point or coincident or behind the secondary flare point, depending on design requirements.

Abstract translation: 一种用于数据记录的磁写头，具有限定二次闪光点的阶梯状磁性壳结构的磁性写入极。 由磁性壳体部分限定的次级火炬点可以相对于与写入磁头的空气轴承表面（ABS）的距离比在主极结构上光刻的传统闪光点更加严格地控制。 这使得使用当前可用的工具和光刻技术可以使写入头的有效喇叭点移动得更接近ABS。 写头还可以包括围绕主极部分包裹的磁​​性后挡板。 后挡板可以具有限定根据设计要求在二次火炬点之间或者在二次火炬点之间或后面的尾部屏蔽喉部高度的黑色边缘。

公开(公告)号：US08379495B2

公开(公告)日：2013-02-19

申请号：US13439994

申请日：2012-04-05

Applicant: Thomas Dudley Boone, Jr. ,  Timothy Carl Strand ,  Bruce David Terris

Inventor： Thomas Dudley Boone, Jr. ,  Timothy Carl Strand ,  Bruce David Terris

IPC: G11B11/00

CPC classification number: G11B5/314 ,  G11B5/4866 ,  G11B5/6088 ,  G11B2005/001 ,  H01S5/0014 ,  H01S5/1085 ,  H01S5/18 ,  H01S2301/14

Abstract: A laser, such as a horizontal cavity surface emitting laser, with internal polarization rotation may be used in thermally assisted recording in hard disk drives. The desired polarization of the laser may be accomplished with two beam reflections off of facets within the laser. The facets may be formed in a single ion beam etching step. The laser may be used on a thermally assisted recording head to produce a polarized beam that is aligned with a track direction of the disk.

Abstract translation: 具有内部偏振旋转的诸如水平腔表面发射激光器的激光器可用于硬盘驱动器中的热辅助记录。 可以通过在激光器内的小平面的两个光束反射来实现激光器的期望的偏振。 小面可以在单个离子束蚀刻步骤中形成。 激光可以用在热辅助记录头上，以产生与盘的磁道方向对齐的偏振光束。

公开(公告)号：US08000062B2

公开(公告)日：2011-08-16

申请号：US12345795

申请日：2008-12-30

Applicant: Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

Inventor： Thomas Dudley Boone, Jr. ,  Bruce Alvin Gurney ,  Ernesto E. Marinero

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G01R33/028 ,  G01R33/091 ,  G01R33/095 ,  G11B5/3993 ,  G11B2005/0002 ,  H01L43/08

Abstract: A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

Abstract translation: 洛伦兹磁阻传感器采用门控电压来控制量子阱结构中电荷载流子的动量。 栅电极可以形成在传感器结构的顶部以施加栅极电压。 栅极电压的应用降低了电荷载流子的动量，这使得它们的运动由于存在磁场而更容易改变，从而增加了传感器的灵敏度。

公开(公告)号：US20090190269A1

公开(公告)日：2009-07-30

申请号：US12021085

申请日：2008-01-28

Applicant: Thomas Dudley Boone, JR. ,  Liesl Folks ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

Inventor： Thomas Dudley Boone, JR. ,  Liesl Folks ,  Robert E. Fontana, JR. ,  Bruce Alvin Gurney ,  Jordan Asher Katine ,  Sergio Nicoletti

IPC: G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/095 ,  G11B5/3993 ,  H01L43/08 ,  H01L43/12

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

Abstract translation: 具有与磁分路结构自对准的引线结构的非凡的磁阻传感器（EMR传感器）。 为了形成根据本发明的实施例的EMR传感器，沉积多个层以形成诸如二维电子气体结构（2DEG）的量子阱结构。 沉积具有两个开口的第一掩模结构，并且执行材料去除处理以将传感器材料的部分从由开口暴露的区域中去除。 第一掩模中的两个开口之间的距离限定一组引线和分流结构之间的距离。 然后沉积非磁性金属。 然后形成第二掩模结构以限定引线的形状。