Three-terminal design for spin accumulation magnetic sensor
    1.
    发明授权
    Three-terminal design for spin accumulation magnetic sensor 有权
    自旋累积磁传感器的三端设计

    公开(公告)号:US08760817B2

    公开(公告)日:2014-06-24

    申请号:US12470827

    申请日:2009-05-22

    IPC分类号: G11B5/33

    摘要: A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source.

    摘要翻译: 具有允许自由层位于空气轴承表面的三端设计的自旋累积传感器。 非磁性导电自旋传输层从自由层结构(位于ABS处)延伸到从ABS去除的参考层结构。 传感器包括用于在参考层结构上施加电流的电流或电压源。 电流源或电压源具有与非磁性自旋传输层连接的引线,也与电接地连接。 用于测量信号电压的电路测量与自由层结构电连接的屏蔽与地之间的电压。 自由层结构可以包括自旋扩散层,其确保在到达电压源的引线之前所有自旋电流完全消散,从而防止自旋电流分流到电压源。

    Device for generating high frequency magnetic fields in a rest-frame of a magnetic medium
    2.
    发明授权
    Device for generating high frequency magnetic fields in a rest-frame of a magnetic medium 有权
    用于在磁介质的静止框架中产生高频磁场的装置

    公开(公告)号:US08514519B2

    公开(公告)日:2013-08-20

    申请号:US12603443

    申请日:2009-10-21

    IPC分类号: G11B5/187 G11B5/127

    CPC分类号: G11B5/3133 G11B2005/001

    摘要: A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media.

    摘要翻译: 一种具有磁摆动结构的磁头,用于启动磁性中的高频磁振荡以提高介质可写性并增加数据密度。 摆动结构包括在非磁性反平行耦合层上彼此反平行耦合的多个磁性层。 摆动结构从数据写入的角度开始排列正好,从而在磁介质上写入数据之前开始高频振荡。

    THREE-TERMINAL SPIN-TORQUE OSCILLATOR (STO)
    4.
    发明申请
    THREE-TERMINAL SPIN-TORQUE OSCILLATOR (STO) 有权
    三端旋转振荡器(STO)

    公开(公告)号:US20120307404A1

    公开(公告)日:2012-12-06

    申请号:US13149419

    申请日:2011-05-31

    IPC分类号: G11B5/48 H03B7/14

    摘要: A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

    摘要翻译: 自旋转矩振荡器(STO)具有单个自由铁磁层,其形成具有非磁性导电间隔层的巨磁电阻(GMR)结构和具有隧道势垒层的隧道磁阻(TMR)结构的一部分。 STO具有三个电气端子,其连接到通过导电间隔层提供自旋转矩激励电流的电路和通过隧道势垒层的较小感测电流。 当STO用作磁场传感器时,激励电流使得自由层的磁化在没有外部磁场的情况下以固定的基频振荡。 耦合到感测电流的检测器响应于外部磁场检测自由层磁化振荡频率从基极频率的偏移。

    TUNABLE GRAPHENE MAGNETIC FIELD SENSOR
    6.
    发明申请
    TUNABLE GRAPHENE MAGNETIC FIELD SENSOR 审中-公开
    可控圆形磁场传感器

    公开(公告)号:US20110037464A1

    公开(公告)日:2011-02-17

    申请号:US12539437

    申请日:2009-08-11

    IPC分类号: G01R33/02

    摘要: A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor.

    摘要翻译: 采用石墨烯感应层的磁场传感器,其中作用在穿过感测层的电荷载流子上的洛伦兹力导致穿过石墨烯层的电荷载流子的路径变化。 可以检测到路径的这种变化,指示存在磁场。 传感器包括一个或多个通过非磁性的电绝缘材料与石墨烯层分离的栅电极。 栅极电压施加到栅极电极改变了石墨烯层的电阻,并且可以用于控制传感器的灵敏度和速度。

    Integrated servo and read EMR sensor
    8.
    发明授权
    Integrated servo and read EMR sensor 有权
    集成伺服和读取EMR传感器

    公开(公告)号:US07848060B2

    公开(公告)日:2010-12-07

    申请号:US12487345

    申请日:2009-06-18

    IPC分类号: G11B5/39 G01R33/09

    摘要: A magnetic storage system according to one embodiment includes magnetic media containing magnetic domain tracks; and at least one head for reading from the magnetic media, each head having: a first Extraordinary Magentoresistive (EMR) device for detecting magnetic fields of a first magnetic domain track; a second EMR device for detecting magnetic fields of a second magnetic domain track. The system further includes a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head. A system according to another embodiment includes a first Extraordinary Magnetoresistive (EMR) device for detecting magnetic fields of a magnetic domain of interest. A system according to yet another embodiment includes an Extraordinary Magnetoresistive (EMR) device for deriving servoing information.

    摘要翻译: 根据一个实施例的磁存储系统包括含有磁畴轨迹的磁介质; 以及用于从磁性介质读取的至少一个磁头,每个磁头具有:用于检测第一磁畴磁道的磁场的第一非均衡磁阻(EMR)装置; 用于检测第二磁畴轨道的磁场的第二EMR装置。 该系统还包括用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。 根据另一实施例的系统包括用于检测感兴趣的磁畴的磁场的第一非均匀磁阻(EMR)装置。 根据又一实施例的系统包括用于导出伺服信息的非寻常磁阻(EMR)装置。

    SLIDER WITH INTEGRATED WRITER AND SEMICONDUCTOR HETEROSTUCTURE READ SENSOR
    9.
    发明申请
    SLIDER WITH INTEGRATED WRITER AND SEMICONDUCTOR HETEROSTUCTURE READ SENSOR 有权
    具有集成写入和半导体异质读取传感器的滑块

    公开(公告)号:US20100165511A1

    公开(公告)日:2010-07-01

    申请号:US12345812

    申请日:2008-12-30

    IPC分类号: G11B5/60

    CPC分类号: G11B5/6005 G11B5/3993

    摘要: A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.

    摘要翻译: 一种用于磁数据记录的滑块,其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成,其有利地提供所需的物理坚固性,并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层,以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。

    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media
    10.
    发明授权
    Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media 失效
    具有霍尔效应传感器的磁头和用于检测来自磁记录介质的记录位的电路

    公开(公告)号:US07440227B2

    公开(公告)日:2008-10-21

    申请号:US11069414

    申请日:2005-02-28

    IPC分类号: G11B5/37

    CPC分类号: G11B5/376

    摘要: A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.

    摘要翻译: 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中,传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极,它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点,其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面(ABS)的高迁移率二维电子或空穴气体,以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地,传感器不需要在常规传感器中使用的磁性材料,因此不会与其相关的磁性噪声。