QUANTUM BITS AND METHODS OF FORMING THE SAME
    1.
    发明申请
    QUANTUM BITS AND METHODS OF FORMING THE SAME 有权
    量子位及其形成方法

    公开(公告)号:US20140357493A1

    公开(公告)日:2014-12-04

    申请号:US14460988

    申请日:2014-08-15

    IPC分类号: G06N99/00 H01L39/22 H01L39/24

    摘要: A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.

    摘要翻译: 提供了布置在基板上的约瑟夫逊结(JJ)量子位(量子位)。 在一个实施例中,每个量子位包括电介质层,介电层下面的超导体基层部分和邻近电介质层/超导体基极层部分结的第一介电扩散区域。 该量子位还包括超导介质层部分,覆盖介电层并且具有与介电层/超导体台面层部分接合部相邻的第二介电扩散区域,第一和第二介电扩散区域减轻了多个量子位上的其它半导体工艺的进一步扩散 。

    QUANTUM BITS AND METHOD OF FORMING THE SAME
    4.
    发明申请
    QUANTUM BITS AND METHOD OF FORMING THE SAME 有权
    量子位及其形成方法

    公开(公告)号:US20130119351A1

    公开(公告)日:2013-05-16

    申请号:US13294473

    申请日:2011-11-11

    IPC分类号: H01L39/22

    摘要: Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

    摘要翻译: 提供了形成约瑟夫逊结(JJ)量子位(量子位)的方法。 在一个实施方案中,该方法包括在基底上形成JJ三层。 JJ三层由夹在底部超导体材料层和顶部超导体材料层之间的介电层构成。 该方法还包括对JJ三层进行热硬化处理以控制电介质层扩散到底部超导体材料层和顶部超导体材料层中,以及蚀刻JJ三层中的开口以形成一个或多个JJ量子位。

    METHODS OF FORMING SUPERCONDUCTOR CIRCUITS
    5.
    发明申请
    METHODS OF FORMING SUPERCONDUCTOR CIRCUITS 有权
    形成超导体电路的方法

    公开(公告)号:US20110287944A1

    公开(公告)日:2011-11-24

    申请号:US12783116

    申请日:2010-05-19

    IPC分类号: H01L39/24 H01L39/22

    CPC分类号: H01L39/2493 H01L27/18

    摘要: Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.

    摘要翻译: 公开了形成超导装置的方法。 在一个实施例中,该方法可以包括在超导材料层上沉积保护性阻挡层,固化保护性阻挡层,在保护性阻挡层上沉积光致抗蚀剂材料层并照射和显影光致抗蚀剂材料层以在 光致抗蚀剂材料层。 该方法还可以包括蚀刻保护性阻挡层,以基于开口图案在保护阻挡层中形成开口,基于保护性阻挡层中的开口蚀刻超导体材料层,以在超导体材料层中形成限定第一 一组超导体材料凸起的孔并剥离光致抗蚀剂材料层和保护性阻挡层。

    Quantum bits and method of forming the same
    6.
    发明授权
    Quantum bits and method of forming the same 有权
    量子位及其形成方法

    公开(公告)号:US09355362B2

    公开(公告)日:2016-05-31

    申请号:US13294473

    申请日:2011-11-11

    IPC分类号: H01L39/24 G06N99/00 H01L39/22

    摘要: Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

    摘要翻译: 提供了形成约瑟夫逊结(JJ)量子位(量子位)的方法。 在一个实施方案中,该方法包括在基底上形成JJ三层。 JJ三层由夹在底部超导体材料层和顶部超导体材料层之间的介电层构成。 该方法还包括对JJ三层进行热硬化处理以控制电介质层扩散到底部超导体材料层和顶部超导体材料层中,以及蚀刻JJ三层中的开口以形成一个或多个JJ量子位。