- 专利标题： BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME
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申请号： US14829487申请日： 2015-08-18
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公开(公告)号： US20150357448A1公开(公告)日： 2015-12-10
- 发明人: PATRICK B. SHEA , Michael Rennie , Sandro J. Di Giacomo
- 申请人： PATRICK B. SHEA , Michael Rennie , Sandro J. Di Giacomo
- 申请人地址： US VA Falls Church
- 专利权人： NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人： NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人地址： US VA Falls Church
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L29/08 ; H01L27/07 ; H01L29/10
摘要：
A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.
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