Method for growing carbon nanotubes
    2.
    发明授权
    Method for growing carbon nanotubes 有权
    生长碳纳米管的方法

    公开(公告)号:US09559308B1

    公开(公告)日:2017-01-31

    申请号:US14800431

    申请日:2015-07-15

    IPC分类号: H01L51/00 H01L21/02 H01L51/05

    摘要: A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

    摘要翻译: 公开了形成碳纳米管(CNT)的方法。 该方法包括将多个基本上半导体纯碳纳米管(CNT)种子分散在基底上以提供接种的基底,使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷,以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。

    METHOD FOR GROWING CARBON NANOTUBES
    6.
    发明申请
    METHOD FOR GROWING CARBON NANOTUBES 有权
    生长碳纳米管的方法

    公开(公告)号:US20170018716A1

    公开(公告)日:2017-01-19

    申请号:US14800431

    申请日:2015-07-15

    IPC分类号: H01L51/00

    摘要: A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

    摘要翻译: 公开了形成碳纳米管(CNT)的方法。 该方法包括将多个基本上半导体纯碳纳米管(CNT)种子分散在基底上以提供接种的基底,使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷,以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。