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公开(公告)号:US20170018716A1
公开(公告)日:2017-01-19
申请号:US14800431
申请日:2015-07-15
IPC分类号: H01L51/00
CPC分类号: H01L21/02606 , C01B32/16 , H01L2924/13061
摘要: A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.
摘要翻译: 公开了形成碳纳米管(CNT)的方法。 该方法包括将多个基本上半导体纯碳纳米管(CNT)种子分散在基底上以提供接种的基底,使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷,以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。
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公开(公告)号:US09559308B1
公开(公告)日:2017-01-31
申请号:US14800431
申请日:2015-07-15
CPC分类号: H01L21/02606 , C01B32/16 , H01L2924/13061
摘要: A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.
摘要翻译: 公开了形成碳纳米管(CNT)的方法。 该方法包括将多个基本上半导体纯碳纳米管(CNT)种子分散在基底上以提供接种的基底,使接种的基底臭氧化以除去多个基本上半导体纯的CNT种子的端面上的缺陷,以及生长碳扩展 多个基本上半导体纯的CNT的端面种子形成多个基本上纯的CNT。
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