Abstract:
An SiC semiconductor device having a p-type 4H—SiC region formed on a part of a surface portion of an SiC substrate, a defect reduction layer formed in a surface portion of the 4H—SiC region, the defect reduction layer having C defect density
Abstract:
It is an object to provide a heating apparatus that uses a spectral selective type heat radiating material and has improved safety and energy efficiency, and the present invention is a heating apparatus that uses a spectral selective type heat radiating material having a high emissivity in a specific wavelength region, wherein a film of the spectral selective type heat radiating material is formed on a surface of a heat radiant while leaving at least one region of the surface of the heat radiant with nothing formed thereon, having property capable of identifying whether or not the heating apparatus is operating and preventing the temperature of a surface of the heat radiant from rising excessively, and also is a heating apparatus that uses a spectral selective type heat radiating material, wherein the spectral selectivity of spectral emissivity is controlled by adjusting the thickness of the film of the spectral selective type heat radiating material.
Abstract:
An object of the invention is to make it possible to correctly and easily measure a thermal diffusivity within a three-layer substance containing an non-metal substance. A non-metal film 1 whose thermophsical properties are unknown is disposed between a first metal film 2 and a second metal film 3, thereby forming a sample having a three-layer structure. The metal films 2 and 3 have predetermined known thermophsical properties, belong to the same sort of substance and have the same thickness. The three-layer substance is disposed on a transparent substrate 4 and is heated from below the second metal film 3, using a picosecond light pulse coming from below and passing through the transparent substrate 4. The light pulse used in the irradiation is converted into a heat in the second metal film 3 during only one picosecond, with such heat diffusing through interface/non-metal film layer/interface and thus arriving at the first metal film 2. By measuring a temperature change on the surface of the first metal film 2, it is possible to perform correct measurement by using the thermoreflectance method formerly suggested in a patent application by the inventors of the present invention.
Abstract:
The present invention provides a heat-storage type heater which has a function of compensating a time lag between the generation and emission of heat, and comprises means for supplying heat to a heat-storing material 1 capable of being supercooled, the heat-storing material 1 being filled into a plurality of small containers 2, means 3 for releasing the supercooled state of the heat-storing material, and a thermal radiation surface.
Abstract:
There is provided a wireless-type power supply method that is applied to the case where an object to which energy is to be transmitted is relatively small, such as a micromachine, and that allows high-voltage electrical energy to be transmitted without using a wire. In this method, the optical energy from an light source is converted into high-voltage electrical energy by means of an energy transducer formed of either a piezoelectric element or a photovoltaic element on the above-described object, and the high-voltage electrical energy is supplied to an actuator, whereby the construction of the receiving side of the energy transmission is simplified.
Abstract:
The present invention provides a heat-storage type heater which has a function of compensating a time lag between the generation and emission of heat, and comprises means for supplying heat to a heat-storing material 1 capable of being supercooled, the heat-storing material 1 being filled into a plurality of small containers 2, means 3 for releasing the supercooled state of the heat-storing material, and a thermal radiation surface.
Abstract:
There is provided a slider displacement direction conversion mechanism in an electrostatic actuator which can convert the displacement direction of a slider in the perpendicular direction to a substrate surface, the mechanism comprises a slider which is displaced under the force from the electrostatic actuator generating the electrostatic force parallel to the substrate surface, and a plurality of elastic beams fixed to a substrate which supports the slider, the elastic beams are entirely or locally provided with displaceable members supporting the slider, and the displaceable member is easily displaced in the direction different from the displacement direction when the slider is subjected to the force in the displacement direction.
Abstract:
A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.