公开(公告)号：US20170229301A9

公开(公告)日：2017-08-10

申请号：US13622089

申请日：2012-09-18

申请人： Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Akihiro KAJITA ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Ichiro MIZUSHIMA

发明人： Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Akihiro KAJITA ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Ichiro MIZUSHIMA

IPC分类号： H01L21/28 ,  B82Y40/00

CPC分类号： H01L21/76846 ,  H01L21/02373 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US20130217226A1

公开(公告)日：2013-08-22

申请号：US13622089

申请日：2012-09-18

申请人： Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Akihiro KAJITA ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Ichiro MIZUSHIMA

发明人： Masayuki KITAMURA ,  Atsuko SAKATA ,  Makoto WADA ,  Yuichi YAMAZAKI ,  Masayuki KATAGIRI ,  Akihiro KAJITA ,  Tadashi SAKAI ,  Naoshi SAKUMA ,  Ichiro MIZUSHIMA

IPC分类号： H01L21/28 ,  B82Y40/00

CPC分类号： H01L21/76846 ,  H01L21/02373 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a co-catalyst layer and catalyst layer above a surface of a semiconductor substrate. The co-catalyst layer and catalyst layer have fcc structure. The fcc structure is formed such that (111) face of the fcc structure is to be oriented parallel to the surface of the semiconductor substrate. The catalyst includes a portion which contacts the co-catalyst layer. The portion has the fcc structure. An exposed surface of the catalyst layer is planarized by oxidation and reduction treatments. A graphene layer is formed on the catalyst layer.

摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 该方法包括在半导体衬底的表面上方形成助催化剂层和催化剂层。 助催化剂层和催化剂层具有fcc结构。 fcc结构形成为使得fcc结构的（111）面平行于半导体衬底的表面定向。 催化剂包括与助催化剂层接触的部分。 该部分具有fcc结构。 通过氧化和还原处理使催化剂层的暴露表面平坦化。 在催化剂层上形成石墨烯层。

公开(公告)号：US08398927B2

公开(公告)日：2013-03-19

申请号：US12495004

申请日：2009-06-30

申请人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： B01J19/08

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/16

摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

摘要翻译： 碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

公开(公告)号：US07642542B2

公开(公告)日：2010-01-05

申请号：US11531577

申请日：2006-09-13

申请人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

发明人： Mariko Suzuki ,  Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/24

CPC分类号： H01L33/02 ,  H01L33/24 ,  H01L33/44 ,  H01L33/58

摘要： A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

摘要翻译： 一种半导体发光器件包括：第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

公开(公告)号：US07528535B2

公开(公告)日：2009-05-05

申请号：US11075883

申请日：2005-03-10

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

IPC分类号： H01J1/62

CPC分类号： H01J1/32 ,  H01J9/247 ,  H01J65/046

摘要： A cold cathode discharge lamp includes: a transparent hollow housing; a fluorescent film formed on inner surfaces of the hollow housing; a pair of cold cathodes that are located in the hollow housing; and a discharge gas that contains hydrogen gas sealed within the hollow housing. Each of the cold cathodes includes: a supporting body that has conductivity; an insulating diamond film formed on the supporting body; and an insulating layer that insulates the supporting body from the insulating diamond film.

摘要翻译： 冷阴极放电灯包括：透明中空壳体; 形成在中空壳体的内表面上的荧光膜; 位于中空壳体中的一对冷阴极; 以及包含密封在中空壳体内的氢气的放电气体。 每个冷阴极包括：具有导电性的支撑体; 形成在所述支撑体上的绝缘金刚石膜; 以及将支撑体与绝缘金刚石膜绝缘的绝缘层。

公开(公告)号：US20070046170A1

公开(公告)日：2007-03-01

申请号：US11366468

申请日：2006-03-03

申请人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tomio Ono ,  Tadashi Sakai ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J1/62

CPC分类号： H01J61/0672 ,  H01J9/022 ,  H01J61/0675 ,  H01J61/72

摘要： A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.

摘要翻译： 用于放电灯的冷阴极包括具有弯曲部分的金属板; 形成在所述金属板的除了所述弯曲部之外的表面上的金刚石膜; 以及安装在金属板上的金属构件。

公开(公告)号：US20070029935A1

公开(公告)日：2007-02-08

申请号：US11495731

申请日：2006-07-31

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiroaki Yoshida ,  Mariko Suzuki

IPC分类号： H01J17/02

CPC分类号： H01J21/04 ,  H01J3/021

摘要： The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.

摘要翻译： 电子发射装置包括第一电极; 具有面对第一电极的第一面和与第一面相对的第二面的半导体势垒，形成有宽带隙半导体; 形成密封在第一电极和半导体势垒之间的空间的绝缘材料; 封闭在空间中的惰性气体; 第二电极，被设置为面对介于其间的真空的半导体势垒的第二面; 第一电压施加单元，其在所述第一电极和所述半导体势垒之间施加电压; 以及在半导体阻挡层和第二电极之间施加电压的第二施加电压单元。