知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

32 records (took 0.022 seconds)

    Flexible cable interconnect assembly
    3.
    发明授权
    Flexible cable interconnect assembly 有权
    柔性电缆互连组件

    公开(公告)号：US06966784B2

    公开(公告)日：2005-11-22

    申请号：US10742501

    申请日：2003-12-19

    Applicant: Koenraad F. Van Schuylenbergh ,  Armin R. Völkel ,  Thomas H. DiStefano ,  Michel A. Rosa ,  David K. Fork ,  Eugene M. Chow ,  Meng H. Lean

    Inventor： Koenraad F. Van Schuylenbergh ,  Armin R. Völkel ,  Thomas H. DiStefano ,  Michel A. Rosa ,  David K. Fork ,  Eugene M. Chow ,  Meng H. Lean

    IPC: H05K1/14 ,  H01B11/00 ,  H01R12/00 ,  H01R12/04 ,  H05K3/32 ,  H05K3/36

    CPC classification number: H01R12/78 ,  H05K1/147 ,  H05K3/323 ,  H05K3/361 ,  H05K3/365 ,  H05K2201/044 ,  H05K2201/09845

    Abstract: A data transmission interconnect assembly (e.g., a router) capable of transmission speeds in excess of 40 Gbps in which a line-card is detachably coupled to a backplane using flexible flat cables that are bent to provide a continuous, smooth curve between the connected boards, and connected by a connection apparatus that employs cable-to-cable interface members that are transparent to the transmitted signal waves. Microspring contact structures are formed on the cables, or on a contact structure pressed against the cables, to provide interface arrangements that are smaller than a wavelength of the transmitted signal. A connector apparatus uses a cam mechanism to align the cables, and then to press a contact structure, having micro spring interface members formed thereon, against the cables. An alterative contact structure uses anisotropic conductive film.

    Abstract translation: 能够传输速度超过40Gbps的数据传输互连组件（例如，路由器），其中线卡可以使用柔性扁平电缆可拆卸地耦合到背板，弯曲以在连接的板之间提供连续的平滑曲线 并且通过采用对所发送的信号波透明的电缆到电缆接口部件的连接装置连接。 微电缆接触结构形成在电缆上或按压在电缆上的接触结构上，以提供小于传输信号的波长的接口布置。 连接器装置使用凸轮机构对准电缆，然后将形成有微弹簧接口构件的接触结构压靠在电缆上。 替代接触结构使用各向异性导电膜。

    Single-crystal-silicon ribbon hinges for micro-mirror and MEMS assembly on SOI material
    4.
    发明授权
    Single-crystal-silicon ribbon hinges for micro-mirror and MEMS assembly on SOI material 失效
    单晶硅丝带铰链用于微镜和MEMS组件在SOI材料上

    公开(公告)号：US06654155B2

    公开(公告)日：2003-11-25

    申请号：US09724329

    申请日：2000-11-29

    Applicant: Michel A. Rosa ,  Decai Sun

    Inventor： Michel A. Rosa ,  Decai Sun

    IPC: G02B2600

    CPC classification number: G02B26/0841 ,  B81B7/0006 ,  B81B2203/058 ,  G02B2006/12104 ,  Y10T428/26 ,  Y10T428/265

    Abstract: Provided is a micro-electromechanical assembly including an out-of-plane device formed on a device layer of a single crystal silicon substrate. A ribbon structure is formed on the device layer, where the ribbon structure has at least one of a width or depth, which is less than the width or depth of the out-of-plane device. A connection interface provides a connection point between a first end of the out-of-plane device and a first end of a ribbon structure, wherein the ribbon structure and out-of-plane device are integrated as a single piece.

    Abstract translation: 提供了一种微机电组件，其包括形成在单晶硅衬底的器件层上的面外器件。 带状结构形成在器件层上，其中带状结构具有小于面外器件的宽度或深度的宽度或深度中的至少一个。 连接接口提供了平面外设备的第一端和带状结构的第一端之间的连接点，其中带状结构和平面外设备被集成为单件。

    Wafer scale integration of electroplated 3D structures using successive lithography, electroplated sacrificial layers, and flip-chip bonding
    10.
    发明授权
    Wafer scale integration of electroplated 3D structures using successive lithography, electroplated sacrificial layers, and flip-chip bonding 有权
    使用连续光刻，电镀牺牲层和倒装芯片接合的电镀3D结构的晶片尺度集成

    公开(公告)号：US07169649B2

    公开(公告)日：2007-01-30

    申请号：US11012597

    申请日：2004-12-16

    Applicant: Michel A. Rosa ,  Eric Peeters

    Inventor： Michel A. Rosa ,  Eric Peeters

    IPC: H01L21/56

    CPC classification number: B41J2/161 ,  B41J2/1625 ,  B41J2/1628 ,  B41J2/164

    Abstract: Wafer scale fabrication of three dimentional substantially enclosed structures on a MEMS/IC die use a combination of electrodeposition of structural and sacrificial layers and flip-chip alignment and bonding technology. A first wafer contains a die with MEMS and/or IC structures. On this MEMS/IC processed die, a first three dimensional structural component is formed using standard lithographic processes and electrodeposition of a structural layer. A second sacrificial wafer is separately processed using similar lithographic and electrodeposition processes to form a corresponding second three dimensional structural component. The wafers are placed in a flip-chip bonder and aligned. Once aligned, the structural components are bonded together. The bonded wafers are then removed from the bonder and the second sacrificial wafer substrate removed. The resultant die includes a three dimensional structural component with a substantially enclosed cavity as well as MEMS and IC elements.

    Abstract translation: 在MEMS / IC芯片上的三维基本封闭结构的晶片尺寸制造使用结合和牺牲层的电沉积和倒装芯片对准和结合技术的组合。 第一晶片包含具有MEMS和/或IC结构的管芯。 在该MEMS / IC处理的模具上，使用标准光刻工艺和结构层的电沉积形成第一三维结构部件。 使用类似的光刻和电沉积工艺分别处理第二牺牲晶片以形成对应的第二三维结构部件。 将晶片放置在倒装芯片接合器中并对齐。 一旦对准，结构部件结合在一起。 然后将粘合的晶片从粘合剂上除去，并且去除第二牺牲晶片衬底。 所得模具包括具有基本上封闭的空腔以及MEMS和IC元件的三维结构部件。

Patent Agency Ranking