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    Avalanche photodiodes having accurate and reproductible amplification layer
    1.
    发明授权
    Avalanche photodiodes having accurate and reproductible amplification layer 有权
    具有准确可再生扩增层的雪崩光电二极管

    公开(公告)号：US08710546B2

    公开(公告)日：2014-04-29

    申请号：US13191758

    申请日：2011-07-27

    申请人： Mi-Ran Park ,  O-Kyun Kwon

    发明人： Mi-Ran Park ,  O-Kyun Kwon

    IPC分类号： H01L31/107 ,  H01L31/02

    CPC分类号： H01L31/107 ,  H01L31/02027 ,  H01L31/02161 ,  H01L31/184 ,  Y02E10/544

    摘要： Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

    摘要翻译： 提供了一种雪崩光电二极管及其制造方法。 制造雪崩光电二极管的方法包括：在n型衬底上依次形成化合物半导体吸收层，化合物半导体分级层，电荷层，化合物半导体放大层，选择性湿蚀刻层和p型导电层。 通过金属有机化学气相沉积工艺形成衬底。

    Semiconductor integrated circuits including optoelectronic device for changing optical phase
    3.
    发明授权
    Semiconductor integrated circuits including optoelectronic device for changing optical phase 有权
    包括用于改变光学相位的光电器件的半导体集成电路

    公开(公告)号：US08422834B2

    公开(公告)日：2013-04-16

    申请号：US12746167

    申请日：2008-06-03

    申请人： Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

    发明人： Jeong-Woo Park ,  Gyung-Ock Kim ,  Mi-Ran Park ,  Jong-Bum You

    IPC分类号： G02F1/035 ,  G02F1/295 ,  G02B6/10 ,  G02B6/12

    CPC分类号： G02F1/218 ,  G02F2001/212 ,  G02F2201/302

    摘要： Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.

    摘要翻译： 提供了一种半导体集成电路。 半导体集成电路包括设置在基板上并且包括光波导部分和一对凹部的半导体图案。 光波导部分的厚度范围为约0.05μm至约0.5μm。 凹部设置在光波导部分的两侧，并且具有比光波导部分更薄的厚度。 第一掺杂区域和第二掺杂区域分别设置在凹部中。 第一和第二掺杂区域分别掺杂有第一导电型掺杂剂和第二导电型掺杂剂。 在至少光波导部分中形成本征区域以接触第一和第二掺杂区域。

    HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF
    5.
    发明申请
    HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF 审中-公开
    混合金属粘结垂直孔表面发射激光及其制造方法

    公开(公告)号：US20090155942A1

    公开(公告)日：2009-06-18

    申请号：US12355836

    申请日：2009-01-19

    申请人： O Kyun KWON ,  Mi Ran PARK ,  Won Seok HAN ,  Jong Hee KIM ,  Hyun Woo SONG

    发明人： O Kyun KWON ,  Mi Ran PARK ,  Won Seok HAN ,  Jong Hee KIM ,  Hyun Woo SONG

    IPC分类号： H01L21/02

    CPC分类号： H01S5/18316 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

    摘要： Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.

    摘要翻译： 提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。 垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层 腔表面发射激光。 在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器 和良好的特点。

    Optical waveguide platform with hybrid-integrated optical transmission device and optical active device and method of manufacturing the same
    7.
    发明授权
    Optical waveguide platform with hybrid-integrated optical transmission device and optical active device and method of manufacturing the same 有权
    具有混合集成光传输装置和光学有源装置的光波导平台及其制造方法

    公开(公告)号：US09042686B2

    公开(公告)日：2015-05-26

    申请号：US13487807

    申请日：2012-06-04

    申请人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    发明人： Hyun Soo Kim ,  Jong Sool Jeong ,  Mi-Ran Park ,  Byungseok Choi ,  O-Kyun Kwon

    IPC分类号： G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/10 ,  G02B6/43 ,  G02B6/122

    CPC分类号： G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

    摘要： Disclosed are an optical waveguide platform with integrated active transmission device and monitoring photodiode. The optical waveguide platform with hybrid integrated optical transmission device and optical active device includes an optical waveguide region formed by stacking a lower cladding layer, a core layer and an upper cladding layer on a substrate; a trench region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region, in which the optical transmission device is mounted in the trench region and the optical active device is flip-chip bonded to the spot expanding region. The monitoring photodiode is flip-chip bonded to the spot expanding region of the core layer of the optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during flip-chip bonding.

    摘要翻译： 公开了一种具有集成主动传输装置和监测光电二极管的光波导平台。 具有混合集成光传输装置和光学有源装置的光波导平台包括通过在基板上层叠下包层，芯层和上包层而形成的光波导区域; 通过蚀刻光波导区域的一部分形成的沟槽区域; 以及形成在光波导区域的芯层上的点扩展区域，其中光传输装置安装在沟槽区域中，并且光学有源器件被倒装芯片接合到点扩展区域。 监视光电二极管被倒装芯片接合到光波导的芯层的点扩展区域，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。

    Tunable laser module
    8.
    发明授权
    Tunable laser module 有权
    可调激光模块

    公开(公告)号：US08428091B2

    公开(公告)日：2013-04-23

    申请号：US12973481

    申请日：2010-12-20

    申请人： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

    发明人： Mi-Ran Park ,  O-Kyun Kwon ,  Byung-seok Choi ,  Dae Kon Oh

    IPC分类号： H01S3/10 ,  H01S3/04 ,  H01S5/00

    CPC分类号： H01S5/423 ,  H01S5/0085 ,  H01S5/02415 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/50

    摘要： Provided is a tunable laser module emitting an optical signal having high speed, high power and wideband wavelength tuning. The tunable laser module includes a laser array configured to emit an optical signal having a plurality of different lasing wavelengths, a temperature controller configured to change a temperature of the laser array, and an optical integration device configured to modulate or amplify the optical signal at a side of the laser array opposing the temperature controller.

    摘要翻译： 提供了一种发射具有高速度，高功率和宽带波长调谐的光信号的可调谐激光模块。 可调谐激光器模块包括配置成发射具有多个不同的激光波长的光信号的激光器阵列，配置成改变激光器阵列的温度的温度控制器，以及配置成在一个或多个激光器阵列处调制或放大光信号的光学积分装置 激光器阵列的一侧与温度控制器相对。

    Shared photodiode image sensor
    9.
    发明授权
    Shared photodiode image sensor 有权
    共享光电二极管图像传感器

    公开(公告)号：US08338868B2

    公开(公告)日：2012-12-25

    申请号：US12626343

    申请日：2009-11-25

    申请人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

    发明人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

    摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

    摘要翻译： 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

    Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same
    10.
    发明授权
    Vertical cavity surface emitting laser module having monitoring photodiode and method of fabricating the same 有权
    具有监测光电二极管的垂直腔表面发射激光器模块及其制造方法

    公开(公告)号：US07804875B2

    公开(公告)日：2010-09-28

    申请号：US11635938

    申请日：2006-12-08

    申请人： Mi Ran Park ,  O Kyun Kwon

    发明人： Mi Ran Park ,  O Kyun Kwon

    IPC分类号： H01S5/026 ,  H01S5/183

    CPC分类号： H01S5/02296 ,  H01S5/0264 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095

    摘要： Provided are a vertical cavity surface emitting laser (VCSEL) module providing accurate alignment between a VCSEL and a monitoring photodiode (MPD) for efficiently detecting light emitted by the VCSEL and a method of fabricating the VCSEL module. The VCSEL module includes: a first mirror layer, a first semiconductor conducting layer, an active layer, a tunnel junction layer, and a second semiconductor conducting layer sequentially formed on a first region in a substrate having first and second regions; a MPD disposed on a portion of the second semiconductor conducting layer in the first region; and a VCSEL including layers having the same shapes as the first mirror layer, the first semiconductor conducting layer, the active layer, the tunnel junction layer and the second semiconductor conducting layer in the first region, and a second mirror layer formed on a portion of the second semiconductor conducting layer, and sequentially formed on the second region in the substrate. The predetermined distance is set so that light emitted by the VCSEL can be detected by the MPD.

    摘要翻译： 提供了垂直腔表面发射激光器（VCSEL）模块，其提供VCSEL和监视光电二极管（MPD）之间的精确对准，用于有效地检测由VCSEL发射的光以及制造VCSEL模块的方法。 VCSEL模块包括：第一半导体层，第一半导体导电层，有源层，隧道结层和顺序地形成在具有第一和第二区域的衬底的第一区域上的第二半导体导电层; 设置在所述第一区域中的所述第二半导体导电层的一部分上的MPD; 以及VCSEL，其包括在第一区域中具有与第一镜像层，第一半导体层，有源层，隧道结层和第二半导体导电层相同形状的层，以及形成在第一区域的一部分上的第二镜层 第二半导体导电层，并顺序地形成在基板的第二区域上。 设定预定距离，使得能够通过MPD检测由VCSEL发出的光。