Abstract:
A cell module 10 comprises: a cell stack 20 comprising multiple cells 30 which are electrically connected to each other; a plate-shaped heat dissipating member 70 arranged such that it extends along a direction in which the multiple cells 30 are arranged, and such that it is thermally connected to the multiple cells 30; and an intervening layer 80 arranged between the cell stack 20 and the heat dissipating member 70, and configured to allow heat to propagate from the cell stack 20 to the heat dissipating member 70, and to suppress a relative displacement between the cell stack 20 and the heat dissipating member 70.
Abstract:
To reduce connection defects between a circuit substrate provided on a core substrate and a circuit to be mounted thereon, thereby improving reliability as a multilayered device mounting substrate. The device mounting substrate includes: a first circuit substrate composed of a substrate, an insulating layer formed on this substrate, and a first conductive layer (including conductive parts) formed on this insulating layer; and a second circuit substrate mounted on the first circuit substrate, being composed of a base, a second conductive layer (including conductive parts) formed on the bottom of the base, and a third conductive layer (including conductive parts) formed on the top of the base. Here, the first and second circuit substrates are bonded by pressure so that the first and second conductive parts are laminated and embedded together into the insulating layer. The first and second conductive parts form connecting areas in the insulating layer, thereby connecting the first and second circuit substrates electrically.
Abstract:
A device mounting board includes an insulating resin layer, a wiring layer provided on one of main surfaces of the insulating resin layer, and bump electrodes connected electrically to the wiring layer and protruding on a side of the insulating resin layer from the wiring layer. A semiconductor module is formed by having the bump electrodes connected to a semiconductor device. A recess is provided in the top face of each bump electrode. The recess communicates with an opening provided on a side surface of the bump electrode.
Abstract:
A method for manufacturing a semiconductor module includes: a first process of forming a conductor on one face of an insulating layer; a second process of exposing the conductor from the other face of the insulating layer; a third process of providing a first wiring layer on an exposed area of the conductor and on the other face of the insulating layer; a fourth process of preparing a substrate on which a circuit element is formed, the second wiring being formed on the substrate; and a fifth process of embedding the conductor in the insulating layer by press-bonding the insulating layer and the substrate in a state where the conductor on which the first wiring layer is provided by the third process is disposed counter to the second wiring layer. Wiring is formed without causing damaging to the circuit element.
Abstract:
A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer 26, a second electrode layer 28, and a memory layer 30 provided between the first and second electrode layers 26 and 28 and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer 30 includes a plurality of mutually isolated sub-memory layers 32, 34, 36, and 38 between the first and second electrode layers 26 and 28.
Abstract:
To reduce connection defects between a circuit substrate provided on a core substrate and a circuit to be mounted thereon, thereby improving reliability as a multilayered device mounting substrate. The device mounting substrate includes: a first circuit substrate composed of a substrate, an insulating layer formed on this substrate, and a first conductive layer (including conductive parts) formed on this insulating layer; and a second circuit substrate mounted on the first circuit substrate, being composed of a base, a second conductive layer (including conductive parts) formed on the bottom of the base, and a third conductive layer (including conductive parts) formed on the top of the base. Here, the first and second circuit substrates are bonded by pressure so that the first and second conductive parts are laminated and embedded together into the insulating layer. The first and second conductive parts form connecting areas in the insulating layer, thereby connecting the first and second circuit substrates electrically.
Abstract:
A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.
Abstract translation:一种制造半导体器件的方法,包括在半导体衬底上形成缓冲膜,形成元件分隔沟槽,在元件分隔沟槽的表面上形成氧化膜,并用氢氟酸洗涤半导体衬底。 洗涤物去除部分缓冲膜,缓冲膜的端部从元件分隔槽的顶部边缘向内移除预定距离。 氧化膜的距离和厚度由表达式0 <= x <=(d /2sinθ)表示,其中x表示距离,θ表示平行于半导体衬底的平面与侧面之间的角度 元件分隔沟的表面。
Abstract:
A cell module comprises: a cell stack comprising multiple cells which are electrically connected to each other; a plate-shaped heat dissipating member arranged such that it extends along a direction in which the multiple cells are arranged, and such that it is thermally connected to the multiple cells ; and an intervening layer arranged between the cell stack and the heat dissipating member, and configured to allow heat to propagate from the cell stack to the heat dissipating member, and to suppress a relative displacement between the cell stack and the heat dissipating member.
Abstract:
Conventional printed circuit boards had a problem of being inferior in heat-radiation characteristic, and metal-core printed circuit boards adopted to improve the heat-radiation characteristic had problems in having low rigidity and a tendency to bend. The ductility of the metal can be obstructed, and the metal protected; by covering substantially the whole area of the front and back sides of the metal core, consisting of metal as the main material, with a first ceramic film and a second ceramic film that obstruct the ductility of the aforementioned metal-core; and covering each of the ceramic films with insulated resin films, to cover the fragility of these ceramics.
Abstract:
A circuit board includes a substrate made principally of metal. An opening is provided on the substrate. A first wiring layer is provided on one surface of the substrate via a first insulating layer, and a second wiring layer is provided on the other surface of the substrate via a second insulating layer. A conductor penetrates the substrate via the opening and connects the first wiring layer with the second wiring layer. An end of the opening at one surface side of the substrate has a tapering form on a surface layer thereof, and the first insulating layer has a recess on an upper surface thereof in an upper region of the opening.