CELL MODULE AND MANUFACTURING METHOD FOR CELL MODULE
    1.
    发明申请
    CELL MODULE AND MANUFACTURING METHOD FOR CELL MODULE 有权
    细胞模块和细胞模块的制造方法

    公开(公告)号:US20130337310A1

    公开(公告)日:2013-12-19

    申请号:US14001790

    申请日:2012-02-16

    Abstract: A cell module 10 comprises: a cell stack 20 comprising multiple cells 30 which are electrically connected to each other; a plate-shaped heat dissipating member 70 arranged such that it extends along a direction in which the multiple cells 30 are arranged, and such that it is thermally connected to the multiple cells 30; and an intervening layer 80 arranged between the cell stack 20 and the heat dissipating member 70, and configured to allow heat to propagate from the cell stack 20 to the heat dissipating member 70, and to suppress a relative displacement between the cell stack 20 and the heat dissipating member 70.

    Abstract translation: 电池模块10包括:电池组20,其包括彼此电连接的多个电池30; 布置成使得其沿着多个单元30布置的方向延伸的板状散热构件70,并且使其与多个单元30热连接; 以及布置在电池组20和散热构件70之间的中间层80,并且被配置为允许热量从电池堆20传播到散热构件70,并且抑制电池堆20和电池组20之间的相对位移 散热构件70。

    Method for manufacturing semiconductor device
    7.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US06887767B2

    公开(公告)日:2005-05-03

    申请号:US10392878

    申请日:2003-03-21

    CPC classification number: H01L21/76235

    Abstract: A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.

    Abstract translation: 一种制造半导体器件的方法,包括在半导体衬底上形成缓冲膜,形成元件分隔沟槽,在元件分隔沟槽的表面上形成氧化膜,并用氢氟酸洗涤半导体衬底。 洗涤物去除部分缓冲膜,缓冲膜的端部从元件分隔槽的顶部边缘向内移除预定距离。 氧化膜的距离和厚度由表达式0 <= x <=(d /2sinθ)表示,其中x表示距离,θ表示平行于半导体衬底的平面与侧面之间的角度 元件分隔沟的表面。

    Circuit board and method for manufacturing semiconductor modules and circuit boards
    10.
    发明授权
    Circuit board and method for manufacturing semiconductor modules and circuit boards 失效
    电路板及制造半导体模块及电路板的方法

    公开(公告)号:US08378229B2

    公开(公告)日:2013-02-19

    申请号:US12813978

    申请日:2010-06-11

    Abstract: A circuit board includes a substrate made principally of metal. An opening is provided on the substrate. A first wiring layer is provided on one surface of the substrate via a first insulating layer, and a second wiring layer is provided on the other surface of the substrate via a second insulating layer. A conductor penetrates the substrate via the opening and connects the first wiring layer with the second wiring layer. An end of the opening at one surface side of the substrate has a tapering form on a surface layer thereof, and the first insulating layer has a recess on an upper surface thereof in an upper region of the opening.

    Abstract translation: 电路板包括主要由金属制成的基板。 在基板上设置开口。 第一布线层经由第一绝缘层设置在基板的一个表面上,第二布线层经由第二绝缘层设置在基板的另一表面上。 导体经由开口穿透基板,并将第一布线层与第二布线层连接。 在基板的一个表面侧的开口的端部在其表面层上具有渐缩形状,并且第一绝缘层在开口的上部区域中具有在其上表面上的凹部。

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