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    Semiconductor optical device and the fabrication method
    2.
    发明授权
    Semiconductor optical device and the fabrication method 有权
    半导体光学器件及其制造方法

    公开(公告)号：US06717187B2

    公开(公告)日：2004-04-06

    申请号：US10124835

    申请日：2002-04-18

    申请人： Susumu Kondo ,  Matsuyuki Ogasawara ,  Ryuzo Iga ,  Yasuhiro Kondo ,  Yoshio Noguchi ,  Masahiro Yuda ,  Ken Tsuzuki ,  Satoshi Oku

    发明人： Susumu Kondo ,  Matsuyuki Ogasawara ,  Ryuzo Iga ,  Yasuhiro Kondo ,  Yoshio Noguchi ,  Masahiro Yuda ,  Ken Tsuzuki ,  Satoshi Oku

    IPC分类号： H01L3172

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01S5/0265 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/3072

    摘要： A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

    摘要翻译： 半导体光学器件包括半导体衬底和由至少第一覆层，有源区和第二覆层形成的层叠体; 其中层叠体的两侧被由半绝缘半导体晶体形成的掩埋层埋设; 掩埋层包括邻近堆叠体的两侧放置的第一层和与第一层相邻放置的第二层; 第一层包括Ru作为掺杂剂; 第二层的组成不同于第一层的组成，或者第二层的掺杂剂不同于第一层的掺杂剂。 该器件也可以被构造成使得有源区的宽度小于层叠体的包覆层的宽度; 并且在有源区的两侧的掩埋层与有源区之间的空间中设置Ru掺杂半绝缘层。

    Semiconductor photodetector
    4.
    发明授权
    Semiconductor photodetector 失效
    半导体光电探测器

    公开(公告)号：US5949120A

    公开(公告)日：1999-09-07

    申请号：US805497

    申请日：1997-02-26

    申请人： Kazutoshi Kato ,  Yoshifumi Muramoto ,  Osaake Nakajima ,  Masahiro Yuda ,  Atsuo Kozen

    发明人： Kazutoshi Kato ,  Yoshifumi Muramoto ,  Osaake Nakajima ,  Masahiro Yuda ,  Atsuo Kozen

    IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/103 ,  H01L31/06 ,  H01L31/0232

    CPC分类号： H01L31/1035 ,  G02B6/12004 ,  G02B6/42 ,  G02B2006/12123 ,  G02B2006/12126

    摘要： This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.

    摘要翻译： 该半导体光电检测器包括光吸收层，n型第一半导体层和p型第二半导体层。 光吸收层包括与第一层接触形成的n型第一层和p型第二层。 第一半导体层布置在第一层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 第二半导体层布置在第二层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 当在第一和第二半导体层之间施加预定的反向偏置电压时，第一层完全耗尽，第二层被部分耗尽。