公开(公告)号：US5949120A

公开(公告)日：1999-09-07

申请号：US805497

申请日：1997-02-26

申请人： Kazutoshi Kato ,  Yoshifumi Muramoto ,  Osaake Nakajima ,  Masahiro Yuda ,  Atsuo Kozen

发明人： Kazutoshi Kato ,  Yoshifumi Muramoto ,  Osaake Nakajima ,  Masahiro Yuda ,  Atsuo Kozen

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/103 ,  H01L31/06 ,  H01L31/0232

CPC分类号： H01L31/1035 ,  G02B6/12004 ,  G02B6/42 ,  G02B2006/12123 ,  G02B2006/12126

摘要： This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the first layer. The first semiconductor layer is arranged on the side of the first layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. The second semiconductor layer is arranged on the side of the second layer and has a shorter wavelength at a light absorption edge and a lower refractive index than in the photoabsorption layer. When a predetermined reverse bias voltage is applied between the first and second semiconductor layers, the first layer is entirely depleted and the second layer is partially depleted.

摘要翻译： 该半导体光电检测器包括光吸收层，n型第一半导体层和p型第二半导体层。 光吸收层包括与第一层接触形成的n型第一层和p型第二层。 第一半导体层布置在第一层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 第二半导体层布置在第二层的侧面，并且在光吸收边缘处具有较短的波长，并且在光吸收层中具有较低的折射率。 当在第一和第二半导体层之间施加预定的反向偏置电压时，第一层完全耗尽，第二层被部分耗尽。

公开(公告)号：US09001859B2

公开(公告)日：2015-04-07

申请号：US13577858

申请日：2011-01-27

申请人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

发明人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/22 ,  H01S5/20

CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

摘要： The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

摘要翻译： 脊状半导体激光器是其中由AlInAs化合物制成的载流子停止层，由AlGaInAs化合物制成的覆盖层和由InGaAsP化合物制成的蚀刻停止层的半导体激光器依次堆叠在有源层的一侧 由AlGaInAs化合物制成。 脊状半导体激光器设置有脊波导，该脊波导包括在由InP化合物制成的层中，在蚀刻停止层的包覆层的相对侧上由InGaAsP化合物制成的衍射光栅。

公开(公告)号：US20120314727A1

公开(公告)日：2012-12-13

申请号：US13577858

申请日：2011-01-27

申请人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

发明人： Atsuo Kozen ,  Yasuyoshi Ote ,  Jun-ichi Asaoka ,  Kenji Hirai ,  Hiroshi Yokoyama

IPC分类号： H01S5/323 ,  H01L21/02

CPC分类号： H01S5/1231 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2086 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3235 ,  H01S2304/04

摘要： The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.

摘要翻译： 脊状半导体激光器是其中由AlInAs化合物制成的载流子停止层，由AlGaInAs化合物制成的覆盖层和由InGaAsP化合物制成的蚀刻停止层的半导体激光器依次堆叠在有源层的一侧 由AlGaInAs化合物制成。 脊状半导体激光器设置有脊波导，该脊波导包括在由InP化合物制成的层中，在蚀刻停止层的包覆层的相对侧上由InGaAsP化合物制成的衍射光栅。