公开(公告)号：US5585957A

公开(公告)日：1996-12-17

申请号：US216610

申请日：1994-03-23

申请人： Masashi Nakao ,  Yasuhiro Kondou ,  Masanobu Okayasu ,  Mitsuru Naganuma ,  Yasuhiro Suzuki ,  Masahiro Yuda ,  Osamu Mitomi ,  Kazuo Kasaya ,  Junichi Nakano ,  Kiyoyuki Yokoyama

发明人： Masashi Nakao ,  Yasuhiro Kondou ,  Masanobu Okayasu ,  Mitsuru Naganuma ,  Yasuhiro Suzuki ,  Masahiro Yuda ,  Osamu Mitomi ,  Kazuo Kasaya ,  Junichi Nakano ,  Kiyoyuki Yokoyama

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/42 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01S5/02 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S5/50 ,  H01L27/14

CPC分类号： H01L33/06 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/131 ,  G02B6/42 ,  H01L31/035236 ,  H01L31/1844 ,  H01L33/0062 ,  H01S5/06255 ,  H01S5/227 ,  H01S5/34 ,  G02B2006/12107 ,  G02B2006/12128 ,  H01S2304/04 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2277 ,  H01S5/3203 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H01S5/5027 ,  Y02E10/544

摘要： An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 .mu.m, a ridge height of from 1 .mu.m to 5 .mu.m, and a gap distance of from 1 .mu.m to 10 .mu.m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer monolithically grown on a nonplanar semiconductor substrate.

摘要翻译： 光学功能器件包括半导体衬底，设置在所述半导体衬底上并选自由发光层，光吸收层和光波导层组成的组的光学功能层。 光学功能层具有多量子阱层。 优选地，半导体衬底是具有脊和邻近所述脊的两个沟槽的非平面半导体衬底，所述脊具有1至10μm的脊宽度，1μm至5μm的脊高度，以及间隙 距离1亩至10亩。 这种光学功能器件可以通过在具有特定尺寸的脊的非平面半导体衬底上生长，通过金属有机气相外延生长应变的多量子阱层来制造。 集成光学器件或电路优选地包括在非平面半导体衬底上的具有特定范围的脊形因子的光学功能器件。 可以通过组合具有稍微不同组成的多个光学功能器件并且包括在非平面半导体衬底上单片生长的应变多量子阱层的一部分来制造集成光学器件。

公开(公告)号：US5155737A

公开(公告)日：1992-10-13

申请号：US788784

申请日：1991-11-06

申请人： Masahiro Ikeda ,  Osamu Mikami ,  Hiroshi Yasaka ,  Mitsuru Naganuma ,  Shingo Uehara ,  Katsuhiko Kurumada

发明人： Masahiro Ikeda ,  Osamu Mikami ,  Hiroshi Yasaka ,  Mitsuru Naganuma ,  Shingo Uehara ,  Katsuhiko Kurumada

IPC分类号： G02F3/02 ,  H01S3/1055 ,  H01S5/06 ,  H01S5/0625

CPC分类号： G02F3/026 ,  H01S3/1055 ,  H01S5/0609 ,  H01S5/06256

摘要： A wide band distributed Bragg reflector having a reflectivity extremely greater than that of a narrow band distributed Bragg reflector mirror portion on the output side of a bistable type wavelength conversion device is arranged on the incident side. The input light in TM polarization mode is used as an input signal light and the wavelength conversion is performed by tuning the narrow band distributed Bragg reflection mirror portion on the output side from which an output light in TE polarization mode outgoes perpendicularly to the input light. The input signal light and the output signal light are polarized in such a manner that they are perpendicular to one another and, therefore, the device can be realized as a one-directional device. The use of any isolator is not required.