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    A METHOD OF MAKING METAL GATE TRANSISTORS
    1.
    发明申请
    A METHOD OF MAKING METAL GATE TRANSISTORS 失效
    制造金属栅极晶体管的方法

    公开(公告)号：US20080001202A1

    公开(公告)日：2008-01-03

    申请号：US11427980

    申请日：2006-06-30

    申请人： James K. Schaeffer ,  David C. Gilmer ,  Mark V. Raymond ,  Philip J. Tobin ,  Srikanth B. Samavedam

    发明人： James K. Schaeffer ,  David C. Gilmer ,  Mark V. Raymond ,  Philip J. Tobin ,  Srikanth B. Samavedam

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1203 ,  H01L21/28105 ,  H01L21/823842 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517

    摘要： A semiconductor device has a gate with three conductive layers over a high K gate dielectric. The first layer is substantially oxygen free. The work function is modulated to the desired work function by a second conductive layer in response to subsequent thermal processing. The second layer is a conductive oxygen-bearing metal. With sufficient thickness of the first layer, there is minimal penetration of oxygen from the second layer through the first layer to adversely impact the gate dielectric but sufficient penetration of oxygen to change the work function to a more desirable level. A third layer, which is metallic, is deposited over the second layer. A polysilicon layer is deposited over the third layer. The third layer prevents the polysilicon layer and the oxygen-bearing layer from reacting together.

    摘要翻译： 半导体器件具有在高K栅极电介质上的具有三个导电层的栅极。 第一层基本上是无氧的。 响应于随后的热处理，功函数被第二导电层调制到期望的功函数。 第二层是导电含氧金属。 具有足够的第一层的厚度，氧从第二层穿过第一层的最小穿透而不利地影响栅极电介质，但充分渗入氧气以将功函数改变到更理想的水平。 金属的第三层沉积在第二层上。 多晶硅层沉积在第三层上。 第三层防止多晶硅层和含氧层一起反应。

    METHODS OF FORMING A REPLACEMENT GATE STRUCTURE HAVING A GATE ELECTRODE COMPRISED OF A DEPOSITED INTERMETALLIC COMPOUND MATERIAL
    4.
    发明申请
    METHODS OF FORMING A REPLACEMENT GATE STRUCTURE HAVING A GATE ELECTRODE COMPRISED OF A DEPOSITED INTERMETALLIC COMPOUND MATERIAL 有权
    形成具有由沉积的金属间化合物材料组成的门电极的更换门结构的方法

    公开(公告)号：US20140051240A1

    公开(公告)日：2014-02-20

    申请号：US13588517

    申请日：2012-08-17

    申请人： Kisik CHOI ,  Mark V. RAYMOND

    发明人： Kisik CHOI ,  Mark V. RAYMOND

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28088 ,  H01L21/28097 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/785

    摘要： Disclosed herein are various methods of forming a replacement gate structure with a gate electrode comprised of a deposited intermetallic compound material. In one example, the method includes removing at least a sacrificial gate electrode structure to define a gate cavity, forming a gate insulation layer in the gate cavity, performing a deposition process to deposit an intermetallic compound material in the gate cavity above the gate insulation layer, and performing at least one process operation to remove portions of intermetallic compound material positioned outside of the gate cavity.

    摘要翻译： 本文公开了通过由沉积的金属间化合物材料构成的栅电极形成替代栅极结构的各种方法。 在一个示例中，该方法包括去除至少牺牲栅极电极结构以限定栅极腔，在栅极腔中形成栅极绝缘层，执行沉积工艺以在栅极绝缘层上方的栅极腔中沉积金属间化合物材料 ，并且执行至少一个处理操作以去除位于栅腔外部的金属间化合物材料的部分。

    Method of making metal gate transistors
    5.
    发明授权
    Method of making metal gate transistors 失效
    制造金属栅晶体管的方法

    公开(公告)号：US07655550B2

    公开(公告)日：2010-02-02

    申请号：US11427980

    申请日：2006-06-30

    申请人： James K. Schaeffer ,  David C. Gilmer ,  Mark V. Raymond ,  Philip J. Tobin ,  Srikanth B. Samavedam

    发明人： James K. Schaeffer ,  David C. Gilmer ,  Mark V. Raymond ,  Philip J. Tobin ,  Srikanth B. Samavedam

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/1203 ,  H01L21/28105 ,  H01L21/823842 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517

    摘要： A semiconductor device has a gate with three conductive layers over a high K gate dielectric. The first layer is substantially oxygen free. The work function is modulated to the desired work function by a second conductive layer in response to subsequent thermal processing. The second layer is a conductive oxygen-bearing metal. With sufficient thickness of the first layer, there is minimal penetration of oxygen from the second layer through the first layer to adversely impact the gate dielectric but sufficient penetration of oxygen to change the work function to a more desirable level. A third layer, which is metallic, is deposited over the second layer. A polysilicon layer is deposited over the third layer. The third layer prevents the polysilicon layer and the oxygen-bearing layer from reacting together.

    摘要翻译： 半导体器件具有在高K栅极电介质上的具有三个导电层的栅极。 第一层基本上是无氧的。 响应于随后的热处理，功函数被第二导电层调制到期望的功函数。 第二层是导电含氧金属。 具有足够的第一层的厚度，氧从第二层穿过第一层的最小穿透而不利地影响栅极电介质，但充分渗入氧气以将功函数改变到更理想的水平。 金属的第三层沉积在第二层上。 多晶硅层沉积在第三层上。 第三层防止多晶硅层和含氧层一起反应。

    Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
    7.
    发明授权
    Semiconductor structure and process for forming a metal oxy-nitride dielectric layer 有权
    用于形成金属氧化氮介电层的半导体结构和工艺

    公开(公告)号：US06576967B1

    公开(公告)日：2003-06-10

    申请号：US09663919

    申请日：2000-09-18

    申请人： James K. Schaeffer, III ,  Mark V. Raymond ,  Bich-Yen Nguyen

    发明人： James K. Schaeffer, III ,  Mark V. Raymond ,  Bich-Yen Nguyen

    IPC分类号： H01L21283

    CPC分类号： H01L21/28202 ,  H01L21/28194 ,  H01L21/3143 ,  H01L29/518

    摘要： The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.

    摘要翻译： 本发明涉及一种半导体器件和形成金属氮氧化物栅介电层或金属硅氧氮化物栅介电层的工艺。 金属氮氧化物或金属硅氧氮化物电介质层包括金属，硅，氧和氮原子中的至少一种，其中氮与氧原子比至少为1:2。 与二氧化硅相比，金属氧化氮化物或金属硅氧氮化物材料具有更高的介电常数，提供具有较厚厚度的相似或改进的电气特性。 其他优点包括降低泄漏特性，改善热稳定性，降低电容对电压（CV）滞后补偿。

    Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber
    8.
    发明授权
    Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber 有权
    通过改变进入室的氮气流量来形成金属氮氧化物介电层的工艺

    公开(公告)号：US06743668B2

    公开(公告)日：2004-06-01

    申请号：US10425242

    申请日：2003-04-29

    申请人： James K. Schaeffer, III ,  Mark V. Raymond ,  Bich-Yen Nguyen

    发明人： James K. Schaeffer, III ,  Mark V. Raymond ,  Bich-Yen Nguyen

    IPC分类号： H01L21285

    CPC分类号： H01L21/28202 ,  H01L21/28194 ,  H01L21/3143 ,  H01L29/518

    摘要： The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.

    摘要翻译： 本发明涉及一种半导体器件和形成金属氮氧化物栅介电层或金属硅氧氮化物栅介电层的工艺。 金属氮氧化物或金属硅氧氮化物电介质层包括金属，硅，氧和氮原子中的至少一种，其中氮与氧原子比至少为1:2。 与二氧化硅相比，金属氧化氮化物或金属硅氧氮化物材料具有更高的介电常数，提供具有较厚厚度的相似或改进的电气特性。 其他优点包括降低泄漏特性，改善热稳定性，降低电容对电压（CV）滞后补偿。