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1.发明授权Semiconductor structure and process for forming a metal oxy-nitride dielectric layer 有权用于形成金属氧化氮介电层的半导体结构和工艺公开(公告)号：US06576967B1
公开(公告)日：2003-06-10
申请号：US09663919
申请日：2000-09-18
IPC分类号： H01L21283
CPC分类号： H01L21/28202 , H01L21/28194 , H01L21/3143 , H01L29/518
摘要： The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.
摘要翻译： 本发明涉及一种半导体器件和形成金属氮氧化物栅介电层或金属硅氧氮化物栅介电层的工艺。 金属氮氧化物或金属硅氧氮化物电介质层包括金属，硅，氧和氮原子中的至少一种，其中氮与氧原子比至少为1:2。 与二氧化硅相比，金属氧化氮化物或金属硅氧氮化物材料具有更高的介电常数，提供具有较厚厚度的相似或改进的电气特性。 其他优点包括降低泄漏特性，改善热稳定性，降低电容对电压（CV）滞后补偿。
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公开(公告)号：US07109079B2
公开(公告)日：2006-09-19
申请号：US11043337
申请日：2005-01-26
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823864 , H01L21/823835 , H01L21/823842
摘要： A method for forming a semiconductor device (100) includes a semiconductor substrate (102) having a first region (104), forming a gate dielectric (108) over the first region, forming a conductive metal oxide (110) over the gate dielectric, forming an oxidation resistant barrier layer (111) over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO2, MoO2, and RuO2, and the oxidation resistant barrier layer includes TiN.
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3.发明授权Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber 有权通过改变进入室的氮气流量来形成金属氮氧化物介电层的工艺公开(公告)号：US06743668B2
公开(公告)日：2004-06-01
申请号：US10425242
申请日：2003-04-29
IPC分类号： H01L21285
CPC分类号： H01L21/28202 , H01L21/28194 , H01L21/3143 , H01L29/518
摘要： The invention relates to a semiconductor device and the process of forming a metal oxy-nitride gate dielectric layer or a metal-silicon oxy-nitride gate dielectric layer. The metal oxy-nitride or metal-silicon oxy-nitride dielectric layer comprises at least one of a metal, silicon, oxygen, and nitrogen atoms where the nitrogen to oxygen atomic ratio is at least 1:2. The metal oxy-nitride or metal-silicon oxy-nitride material has a higher dielectric constant in comparison with a silicon dioxide, providing similar or improved electrical characteristics with a thicker thickness. Other benefits include reduced leakage properties, improved thermal stability, and reduced capacitance versus voltage (CV) hysteresis offset.
摘要翻译： 本发明涉及一种半导体器件和形成金属氮氧化物栅介电层或金属硅氧氮化物栅介电层的工艺。 金属氮氧化物或金属硅氧氮化物电介质层包括金属，硅，氧和氮原子中的至少一种，其中氮与氧原子比至少为1:2。 与二氧化硅相比，金属氧化氮化物或金属硅氧氮化物材料具有更高的介电常数，提供具有较厚厚度的相似或改进的电气特性。 其他优点包括降低泄漏特性，改善热稳定性，降低电容对电压（CV）滞后补偿。
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