公开(公告)号：US5434026A

公开(公告)日：1995-07-18

申请号：US989909

申请日：1992-12-11

Applicant: Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

Inventor： Norihiko Takatsu ,  Kyoichi Suwa ,  Shinichi Nakamura ,  Hiroaki Hosokawa ,  Shigeru Hirukawa

IPC: G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC classification number: G03F7/2022 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675

Abstract: In a method for measuring a condition for exposing, at a predetermined energy quantity, a pattern formed on a mask onto a photosensitive substrate on which a resist image is formed on the surface thereof by using an exposing device, first patterns formed at a plurality of positions on the mask are successively exposed onto a plurality of partial regions on the photosensitive substrate while changing said exposure condition. Second patterns are, with overlapping, exposed onto at least a portion of the latent image of said first patterns formed in said partial regions due to said process while changing the exposure condition. A predetermined state where the resist image is formed on the resist layer after the development is detected so that the exposure condition is measured in accordance with the state.

Abstract translation: 在通过使用曝光装置测量以预定能量将形成在其上形成有抗蚀剂图像的感光基板上的掩模曝光的条件的方法中，形成多个 在改变所述曝光条件的同时，将掩模上的位置依次曝光在感光基板上的多个部分区域上。 在改变曝光条件的同时，由于所述处理，第二图案重叠地暴露在形成在所述部分区域中的所述第一图案的至少一部分潜像上。 在显影后在抗蚀剂层上形成抗蚀剂图像的预定状态，使得根据状态测量曝光条件。

公开(公告)号：US4806987A

公开(公告)日：1989-02-21

申请号：US135377

申请日：1987-12-21

Applicant: Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

Inventor： Takashi Mori ,  Koichi Matsumoto ,  Tsutomu Takai ,  Masaichi Murakami ,  Kyoichi Suwa

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027 ,  G03B27/42

CPC classification number: G03F7/70475

Abstract: A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.

Abstract translation: 投影曝光装置包括投影光学系统，用于将具有预定图案的掩模版的图像投影到晶片上，以及用于在晶片的位置和光罩之间进行相对移动的台。 进行第一曝光以在晶片上的第一区域中投影和曝光来自投影光学系统的标线片图像图案，然后将该台移动预定量，以进行第二次曝光，以在第二曝光中投影和曝光标线图像图案 区域定位成与晶片上的第一区域相邻，从而掩模版图像被投影并暴露在同一晶片上的不同区域上。 该阶段以这样的方式引起标线片和晶片之间的相对移动运动，使得通过第一曝光获得的标线图像图案和通过第二次曝光获得的标线图像图案在晶片上彼此重叠预定量。

公开(公告)号：US4770533A

公开(公告)日：1988-09-13

申请号：US51203

申请日：1987-05-18

Applicant: Kyoichi Suwa

Inventor： Kyoichi Suwa

IPC: G03F1/00 ,  G03F1/38 ,  G03F1/42 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  G01B11/00

CPC classification number: G03F9/7023 ,  G03F9/7076

Abstract: An apparatus for detecting a position of a semiconductor wafer comprises a linear alignment mark formed on a surface of the wafer along a pair of parallel straight lines extending in a given direction intersecting a radial direction of the wafer. The alignment mark includes at least two projection sections projected from the surface and spaced from each other in the given direction. Each of the projection sections has a first stepped edge provided on or along one of the pairs of straight lines and a second stepped edge provided on and along the other of the pair of straight lines, the pair of straight lines being separated from each other by a distance d', and each of the projection sections being defined such that the following relationship is satisfied:l'>d'where l' is the length of one of the projection sections in the given direction. A position of the alignment mark with respect to a direction intersecting the given direction is determined on the basis of light scattered by the first and second stepped edges.

Abstract translation: 用于检测半导体晶片的位置的装置包括沿着沿与晶片的径向相交的给定方向延伸的一对平行直线形成在晶片的表面上的线性对准标记。 对准标记包括从表面突出并且沿给定方向彼此间隔开的至少两个突出部分。 每个突出部分具有设置在一对直线上或沿着一对直线中的一个上的第一阶梯边缘，以及设置在该对直线上并沿着另一条直线的第二台阶边缘，该一对直线彼此分开通过 距离d'，并且每个投影部分被限定为使得满足以下关系：l'> d'其中l'是给定方向上的一个投影部分的长度。 基于由第一和第二台阶边缘散射的光来确定对准标记相对于与给定方向相交的方向的位置。

公开(公告)号：US4704020A

公开(公告)日：1987-11-03

申请号：US903500

申请日：1986-09-04

Applicant: Masaichi Murakami ,  Hidemi Kawai ,  Kyoichi Suwa

Inventor： Masaichi Murakami ,  Hidemi Kawai ,  Kyoichi Suwa

IPC: H01L21/30 ,  G03F9/00 ,  H01L21/027 ,  H01L21/66 ,  H01L21/67 ,  G01B11/26

CPC classification number: G03F9/7023

Abstract: A projection optical apparatus for projecting the pattern of a mask onto a substrate through a projection optical system includes a stage for supporting thereon a substrate having a plurality of marks for detection on the surface thereof, first detecting means for detecting the amount of inclination of the surface of the substrate relative to the surface on which the pattern is projected and imaged, through the projection optical system, second detecting means for detecting the amount of inclination of the surface of the substrate relative to a predetermined reference plane independently of the projection optical system, and calibrating means for calibrating the amount of inclination detected by the second detecting means on the basis of the amount of inclination detected by the first detecting means.

Abstract translation: 一种用于通过投影光学系统将掩模的图案投影到基板上的投影光学装置包括：用于在其上表面支撑具有多个用于检测的标记的基板的台，用于检测其上的倾斜量的第一检测装置 通过投影光学系统相对于图案投射和成像的表面的基板的表面，用于独立于投影光学系统检测基板相对于预定参考平面的表面的倾斜量的第二检测装置 以及校准装置，用于基于由第一检测装置检测到的倾斜量来校准由第二检测装置检测到的倾斜量。

公开(公告)号：US4699515A

公开(公告)日：1987-10-13

申请号：US705699

申请日：1985-02-26

Applicant: Akikazu Tanimoto ,  Toshio Matsuura ,  Kyoichi Suwa

Inventor： Akikazu Tanimoto ,  Toshio Matsuura ,  Kyoichi Suwa

IPC: G03F9/00 ,  G01B11/00

CPC classification number: G03F9/70

Abstract: In an exposure apparatus for manufacturing semiconductor devices, a pattern on a photomask is aligned with a plurality of patterns formed on a wafer in a manner that detects and corrects misalignment, including, inter alia, rotational errors, not only between a photomask and a wafer, but also between a photomask and individual chips formed on the wafer, so that pattern matching is attained with very high accuracy. Apparatus for achieving this result employs different arrangements of alignment marks together with optical systems and positional adjustment devices.

Abstract translation: 在用于制造半导体器件的曝光装置中，光掩模上的图案以形成在晶片上的多个图案与检测和校正不对准的方式对准，包括尤其是除了光掩模和晶片之间的旋转误差 ，而且在光掩模和形成在晶片上的单个芯片之间，使得以非常高的精度获得图案匹配。 用于实现该结果的装置与光学系统和位置调整装置一起使用对准标记的不同布置。

公开(公告)号：US4666273A

公开(公告)日：1987-05-19

申请号：US844263

申请日：1986-03-25

Applicant: Hisayuki Shimizu ,  Satoru Anzai ,  Hiroshi Tanaka ,  Kyoichi Suwa

Inventor： Hisayuki Shimizu ,  Satoru Anzai ,  Hiroshi Tanaka ,  Kyoichi Suwa

IPC: G03F7/20 ,  G03B27/42

CPC classification number: G03F7/70241 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70891

Abstract: An apparatus for projecting the image of an object onto a substrate comprises light source means for supplying light energy for illuminating the object, optical means for forming the image of the object on the substrate, the image magnification of the optical means being heated and varied by the light energy from the light source means, means for monitoring the manner in which the light energy is applied to the optical means, means for determining the variation in the image magnification of the optical means in response to the monitor means, and means for adjusting the size of the image formed on the substrate in response to the determining means.

Abstract translation: 用于将物体的图像投影到基板上的装置包括用于提供用于照射物体的光能的光源装置，用于在基板上形成物体的图像的光学装置，光学装置的图像放大率被加热和变化 来自光源的光能意味着，用于监视光能被施加到光学装置的方式的装置，用于响应于监视装置确定光学装置的图像放大率的变化的装置，以及用于调节装置 响应于确定装置在基板上形成的图像的尺寸。

公开(公告)号：US06855997B2

公开(公告)日：2005-02-15

申请号：US09729339

申请日：2000-12-05

Applicant: Kyoichi Suwa

Inventor： Kyoichi Suwa

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/38 ,  G03F1/44 ,  G03F1/84 ,  G03F7/20 ,  H01L21/66 ,  H01L23/544 ,  H01L31/0232

CPC classification number: G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A mask of the present invention has a circuit pattern to be transferred to a substrate via an optical system, and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. By using such a mask, the time for proceeding from inspection to actual device exposure can be shortened.

Abstract translation: 本发明的掩模具有经由光学系统传送到基板的电路图案，以及用于测量转印到基板的图案的线宽的检查图案。 通过使用这样的掩模，可以缩短从检查到实际的设备曝光的时间。

公开(公告)号：US06191429B1

公开(公告)日：2001-02-20

申请号：US09287702

申请日：1999-04-06

Applicant: Kyoichi Suwa

Inventor： Kyoichi Suwa

IPC: G01J120

CPC classification number: G03F7/70641 ,  G03F7/70275 ,  G03F7/70341 ,  G03F7/70358 ,  G03F7/70716 ,  G03F7/70808 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70891 ,  G03F9/70 ,  G03F9/7026

Abstract: Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objective optical system. The focusing apparatus has a first detection system having a detection area at a first position located outside the field of the objective optical system, a second detection system having a detection area at a second position located outside the field of the objective optical system and spaced apart from the first position, and a third detection system having a detection area at a third position located outside the field of the objective optical system and spaced apart from each of the first and second positions. A calculator calculates a deviation between a first focus position and a target focus position and temporarily stores a second focus position at the time of detection made by the first detection system. A controller controls focusing on the surface of the workpiece on the basis of the calculated deviation, the stored second focus position and a third focus position when the area on the workpiece corresponding to the detection area of the first detection system is positioned in the field of the objective optical system by relative movement of the workpiece and the objective optical system.

Abstract translation: 具有用于光学制造工件的物镜光学系统，在工件表面上形成所需图案或检查工件上的图案并用于调节工件表面与目标之间的聚焦状态的聚焦装置的改进 光学系统。 聚焦装置具有第一检测系统，其具有位于物镜光学系统的场外的第一位置处的检测区域;第二检测系统，其具有位于物镜光学系统的场外的间隔开的第二位置处的检测区域 以及第三检测系统，其具有位于物镜光学系统的场外的第三位置处的检测区域，并且与第一和第二位置中的每一个间隔开。 计算器计算第一对焦位置和目标对焦位置之间的偏差，并且临时存储由第一检测系统进行的检测时的第二聚焦位置。 控制器基于计算出的偏差，存储的第二聚焦位置和第三对焦位置来控制对工件表面的对焦，当与第一检测系统的检测区域对应的工件上的区域位于 物镜光学系统通过相对运动的工件和物镜光学系统。

公开(公告)号：US5741614A

公开(公告)日：1998-04-21

申请号：US543424

申请日：1995-10-16

Applicant: John H. McCoy ,  Kyoichi Suwa

Inventor： John H. McCoy ,  Kyoichi Suwa

IPC: G01N37/00 ,  G01Q60/24 ,  G01Q80/00 ,  G03C5/00 ,  G03F1/84 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/66

CPC classification number: G01Q60/24 ,  B82Y35/00 ,  G03F1/84 ,  G03F7/2022 ,  G03F7/40 ,  G03F7/70616 ,  G01Q80/00 ,  Y10S977/854

Abstract: Accurate measurement of the sidewalls of photoresist features formed on a semiconductor substrate is achieved by a double mask exposure process. This allows probing the sidewalls of closely spaced photoresist features with the probe tip of an atomic force microscope, in spite of the small (submicron) physical dimensions involved. First a conventional line/space pattern is exposed onto the photoresist using the desired mask. Then a second exposure is made using a second mask which has a special space pattern to effectively remove the already exposed photoresist features along at least one side of one of the previously exposed features. Hence, at least that one side of that one feature is clear of any adjoining photoresist features when the photoresist is then developed after the two exposures. This allows easy access to the sidewall of that one photoresist feature by tilting the probe tip of the atomic force microscope. This allows the measurement of the photoresist feature sidewall characteristics, including for instance angle, curvature and any artifacts present.

Abstract translation: 在半导体衬底上形成的光致抗蚀剂特征的侧壁的精确测量是通过双掩模曝光工艺实现的。 尽管所涉及的（亚微米）物理尺寸很小，但是这可以使原子力显微镜的探针尖端探测紧密间隔的光致抗蚀剂特征的侧壁。 首先，使用所需的掩模将常规的线/空间图案暴露在光致抗蚀剂上。 然后使用具有特殊空间图案的第二掩模进行第二曝光，以有效地去除沿着先前暴露的特征之一的至少一侧的已经曝光的光致抗蚀剂特征。 因此，当在两次曝光之后显影光致抗蚀剂时，至少该一个特征的一个面没有任何相邻的光致抗蚀剂特征。 这允许通过倾斜原子力显微镜的探针尖端容易地接近该一个光致抗蚀剂特征的侧壁。 这允许测量光致抗蚀剂特征侧壁特征，包括例如角度，曲率和存在的任何假象。

公开(公告)号：US5666205A

公开(公告)日：1997-09-09

申请号：US562784

申请日：1995-11-27

Applicant: Hiroki Tateno ,  Koji Kaise ,  Kyoichi Suwa ,  Yuji Imai

Inventor： Hiroki Tateno ,  Koji Kaise ,  Kyoichi Suwa ,  Yuji Imai

IPC: G03F7/20 ,  G01B11/00

CPC classification number: G03F7/70591 ,  G03F7/70633 ,  G03F7/70883

Abstract: A measuring method comprises a first step to expose by the irradiation of a predetermined energy ray onto the resist layer of a photosensitive board a first mask pattern having at least two linear pattern portions arranged substantially in axial symmetry with respect to a straight line in a predetermined first direction and inclined at a predetermined angle to the straight line in the first direction, a second step to overlap with the first mask pattern image exposed on the resist layer a second mask pattern formed by the linear patterns which extend in a second direction substantially perpendicular to the first direction by relatively driving the second mask pattern in a predetermined amount in the first direction for exposure, and a third step to measure an interval in the second direction between at least two wedge-shaped resist images formed by the overlapped portions of the first mask pattern and the second mask pattern. The difference between the measured value and a predetermined standard value of the interval in the second direction may be obtained to determined a positional deviation.

Abstract translation: 一种测量方法包括：通过将预定能量射线照射到感光板的抗蚀剂层上的第一掩模图案的第一步骤，该第一掩模图案具有至少两个线性图案部分，该至少两个线状图案部分相对于直线在预定的 第一方向并且以与第一方向上的直线成预定角度倾斜的第二步骤，与在抗蚀剂层上暴露的第一掩模图案图像重叠的第二步骤是由沿着基本垂直的第二方向延伸的线状图案形成的第二掩模图案 通过在第一曝光方向上相对地驱动第二掩模图案以预定的量相对地驱动第一方向，以及第三步骤，用于测量由第二方向上的重叠部分形成的至少两个楔形抗蚀剂图像之间的第二方向上的间隔 第一掩模图案和第二掩模图案。 可以获得测量值与第二方向上的间隔的预定标准值之间的差以确定位置偏差。