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    Electronic devices including electrode walls with insulating layers thereon
    1.
    发明授权
    Electronic devices including electrode walls with insulating layers thereon 失效
    电子设备包括其上具有绝缘层的电极壁

    公开(公告)号：US07888725B2

    公开(公告)日：2011-02-15

    申请号：US12245218

    申请日：2008-10-03

    申请人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    发明人： In-joon Yeo ,  Tae-hyuk Ahn ,  Kwang-wook Lee ,  Jung-woo Seo ,  Jeong-sic Jeon

    IPC分类号： H01L29/94

    CPC分类号： H01L28/90 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.

    摘要翻译： 电子器件可以包括衬底和在衬底上的多个导电电极。 每个导电电极可以具有远离基板延伸的相应电极壁，并且至少一个导电电极的电极壁可以包括凹部。 此外，可以在电极壁上设置绝缘层，并且电极壁的部分在基板和绝缘层之间可以没有绝缘层。

    CHANGING CLASS OF DEVICE
    2.
    发明申请
    CHANGING CLASS OF DEVICE 有权
    改变设备类

    公开(公告)号：US20100023649A1

    公开(公告)日：2010-01-28

    申请号：US12508684

    申请日：2009-07-24

    申请人： Moo-Rak CHOI ,  Kwang-Wook LEE ,  You-Sun KIM ,  Sung-Jea KO

    发明人： Moo-Rak CHOI ,  Kwang-Wook LEE ,  You-Sun KIM ,  Sung-Jea KO

    IPC分类号： G06F3/00

    CPC分类号： G06F13/385

    摘要： A class changing apparatus includes a link unit configured to be linked with a client device to transmit and receive data. The class change apparatus also includes a storage unit configured to store apparatus information including class information of the client device. The class changing apparatus further includes a control unit coupled to the link unit and the storage unit and controlling operations of the class changing apparatus including a class changing operation, wherein the class change operation includes transmitting at least one command including a command for rebranching into the selected class to the client device through the link unit and registering class information as changed class information in the storage unit in response to detecting a class change request.

    摘要翻译： 类改变装置包括被配置为与客户端设备链接以发送和接收数据的链路单元。 类别更换装置还包括：存储单元，被配置为存储包括客户端装置的类别信息的装置信息。 课堂改变装置还包括耦合到链接单元和存储单元的控制单元，以及包括班级改变操作的班级改变装置的控制操作，其中班级改变操作包括发送至少一个命令，包括重新分配的命令到 通过链接单元向客户端设备选择类，并响应于检测到类别改变请求，将等级信息作为改变的类信息登记在存储单元中。

    SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
    包括门结构的半导体器件及其制造方法

    公开(公告)号：US20110284968A1

    公开(公告)日：2011-11-24

    申请号：US13097409

    申请日：2011-04-29

    申请人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

    发明人： Kwang-Wook Lee ,  Jae-Jik Baek ,  In-Seak Hwang ,  Seok-Woo Nam

    IPC分类号： H01L29/772

    CPC分类号： H01L29/66545 ,  H01L29/165 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    摘要： A semiconductor device includes a semiconductor substrate having a top surface and a recessed portion including at least two oblique side surfaces and a first bottom surface therebetween, a gate insulating layer formed on the recessed portion, a gate electrode formed on the gate insulating layer, a channel region below the gate electrode in the semiconductor substrate, and gate spacers formed on side surfaces of the gate electrode, wherein both the bottom surface and the side surfaces of the recessed portion include flat surfaces. A method of manufacturing a semiconductor device comprising the steps of forming a recess portion including at least two oblique side surfaces and a bottom surface therebetween in a semiconductor substrate, forming a gate insulating layer formed on the recessed portion, forming a gate electrode formed on the gate insulating layer, forming a channel region below the gate electrode in the semiconductor substrate, and forming gate spacers formed on side surfaces of the gate electrode.

    摘要翻译： 半导体器件包括具有顶表面和凹部的半导体衬底，该凹部包括至少两个倾斜侧表面和其间的第一底表面，形成在凹陷部分上的栅极绝缘层，形成在栅极绝缘层上的栅电极， 半导体衬底中的栅电极下方的沟道区域和形成在栅电极的侧表面上的栅极间隔，其中凹部的底表面和侧表面均包括平坦表面。 一种制造半导体器件的方法，包括以下步骤：在半导体衬底中形成包括至少两个倾斜侧表面和底表面的凹部，形成在所述凹部上形成的栅极绝缘层，形成在所述凹部上形成的栅电极 栅极绝缘层，在半导体衬底中的栅电极下方形成沟道区，以及形成在栅电极的侧表面上的栅极间隔。

    Semiconductor device and method thereof
    8.
    发明申请
    Semiconductor device and method thereof 审中-公开
    半导体装置及其方法

    公开(公告)号：US20060263971A1

    公开(公告)日：2006-11-23

    申请号：US11436582

    申请日：2006-05-19

    申请人： Kwang-Wook Lee ,  Cheol-Woo Park ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim

    发明人： Kwang-Wook Lee ,  Cheol-Woo Park ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim

    IPC分类号： B32B3/10 ,  B32B3/00 ,  H01L21/8244 ,  H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  Y10T428/24273 ,  Y10T428/24479

    摘要： A semiconductor device and a method thereof are disclosed. In the example method, a mold layer having an opening may be formed on a substrate. A conductive etchable pattern (e.g., a preliminary conductive pattern, a lower electrode pattern, etc.) may be formed within the opening. The mold layer may be reduced so as to expose a portion of the conductive etchable pattern and less than all of the exposed portion of the conductive etchable pattern may be etched such that the etched conductive etchable pattern has a reduced thickness. The example semiconductor device may include the etched conductive etchable pattern as above-described with respect to the example method.

    摘要翻译： 公开了一种半导体器件及其方法。 在示例性方法中，可以在基板上形成具有开口的模具层。 可以在开口内形成导电刻蚀图案（例如，初步导电图案，下电极图案等）。 可以减小模具层，以便露出导电可蚀刻图案的一部分，并且可以蚀刻少于导电可蚀刻图案的全部暴露部分，使得蚀刻的导电可蚀刻图案具有减小的厚度。 示例性半导体器件可以包括如上面关于示例性方法的蚀刻的导电可蚀刻图案。