公开(公告)号：US5854558A

公开(公告)日：1998-12-29

申请号：US531449

申请日：1995-09-21

申请人： Toshiyuki Motooka ,  Syuichirou Takahashi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Jouji Fujimori

发明人： Toshiyuki Motooka ,  Syuichirou Takahashi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Jouji Fujimori

IPC分类号： G01R1/067 ,  G01R1/073 ,  G01R31/28 ,  G01R31/02

CPC分类号： G01R1/06711 ,  G01R1/07314 ,  G01R1/06733 ,  G01R1/06744 ,  G01R1/06755 ,  G01R31/2863 ,  H01L2224/16225 ,  H01L2224/45144

摘要： A test board used for testing a semiconductor device provided with projection electrodes includes a main board and testing electrodes. The testing electrodes are provided on the main board, each projecting upwardly from the main board. When the semiconductor device is tested, the testing electrodes are electrically connected to the projection electrodes by insertion of the testing electrodes into the projection electrodes. The semiconductor device is mounted on the main board to test the semiconductor device through the testing electrodes.

摘要翻译： 用于测试具有投影电极的半导体器件的测试板包括主板和测试电极。 测试电极设置在主板上，每个从主板向上突出。 当测试半导体器件时，通过将测试电极插入投影电极中，测试电极与投影电极电连接。 半导体器件安装在主板上，以通过测试电极测试半导体器件。

公开(公告)号：US06344407B1

公开(公告)日：2002-02-05

申请号：US09691075

申请日：2000-10-19

申请人： Hirohisa Matsuki ,  Fumihiko Taniguchi ,  Kunio Kodama ,  Eiji Watanabe ,  Masataka Mizukoshi ,  Hiroyuki Matsui

发明人： Hirohisa Matsuki ,  Fumihiko Taniguchi ,  Kunio Kodama ,  Eiji Watanabe ,  Masataka Mizukoshi ,  Hiroyuki Matsui

IPC分类号： B23K3522

CPC分类号： B23K35/38 ,  B23K35/262 ,  B23K35/268 ,  B23K35/3618 ,  B23K2101/40 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15787 ,  H05K3/3489 ,  H01L2924/00 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05166

摘要： A semiconductor device manufacturing method comprises the steps of forming solder bumps on an underlying metal film of a semiconductor device, and placing the semiconductor device and the solder layer in a reduced pressure atmosphere containing formic acid to form the solder bumps. Accordingly, the solder bumps can be formed without flux generating voids in the solder layer. Furthermore, the cleaning required after the solder bumps are formed can be omitted.

摘要翻译： 半导体器件制造方法包括以下步骤：在半导体器件的下面的金属膜上形成焊料凸块，并将半导体器件和焊料层放置在含有甲酸的减压气氛中以形成焊料凸块。 因此，可以在焊料层中形成焊剂凸块而没有焊剂产生空隙。 此外，可以省略在形成焊料凸块之后所需的清洁。

公开(公告)号：US4190555A

公开(公告)日：1980-02-26

申请号：US762843

申请日：1977-01-27

申请人： Yoshinori Takamura ,  Hakusei Hamada ,  Kiyoyuki Kitamura ,  Tetsuro Inada ,  Kunio Kodama ,  Katuyuki Usami

发明人： Yoshinori Takamura ,  Hakusei Hamada ,  Kiyoyuki Kitamura ,  Tetsuro Inada ,  Kunio Kodama ,  Katuyuki Usami

IPC分类号： C08F4/00 ,  B01J31/38 ,  B01J37/00 ,  C08F4/60 ,  C08F4/64 ,  C08F10/00

CPC分类号： C08F10/00

摘要： A method is disclosed for preparing a catalyst system for polymerizing .alpha.-olefins. This method comprises admixing with at least an organoaluminum compound an activated titanium component which is prepared by first reacting a titanium compound of the general formula, TiX.sub.n (OR).sub.4-n (in which X is a halogen atom, R is an alkyl group or a phenyl group, and n is 2 to 4), with a metal of Group II or III of the Periodic Table and a halide of a metal of Group II or III of the Periodic Table in the presence of an aromatic compound, then treating the resulting reaction product with an oxygen-containing organic compound, and further treating with a tetrahalide of titanium, vanadium or both at a temperature of from -80.degree. C. to 80.degree. C., and finally aging at a temperature above 30.degree. C. for from 30 minutes to 24 hours.

摘要翻译： 公开了制备用于聚合α-烯烃的催化剂体系的方法。 该方法包括与至少有机铝化合物混合活化的钛组分，其通过首先使通式TiXn（OR）4-n（其中X是卤素原子，R是烷基或 苯基，n为2至4）与元素周期表中II或III族的金属和元素周期表第II或III族金属的卤化物在芳族化合物的存在下， 得到与含氧有机化合物的反应产物，并在-80℃至80℃的温度下用钛，钒或二者的四卤化物进一步处理，最后在30℃以上升温。 从30分钟到24小时。

公开(公告)号：US06218281B1

公开(公告)日：2001-04-17

申请号：US09192443

申请日：1998-11-16

申请人： Eiji Watanabe ,  Hirohisa Matsuki ,  Kenichi Kado ,  Kenichi Nagashige ,  Masanori Onodera ,  Kunio Kodama ,  Hiroyuki Yoda ,  Joji Fujimori ,  Minoru Nakada ,  Yutaka Makino

发明人： Eiji Watanabe ,  Hirohisa Matsuki ,  Kenichi Kado ,  Kenichi Nagashige ,  Masanori Onodera ,  Kunio Kodama ,  Hiroyuki Yoda ,  Joji Fujimori ,  Minoru Nakada ,  Yutaka Makino

IPC分类号： H01L2144

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02377 ,  H01L2224/03462 ,  H01L2224/039 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805

摘要： A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 &mgr;m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.

摘要翻译： 制备半导体衬底，其具有主表面，由导电材料制成的裸露焊盘形成在主表面的局部区域中，并且主表面的另一区域被第一绝缘膜覆盖。 在第一绝缘膜和垫上形成基底导电膜。 在基底导电膜上形成厚度为50μm以上的光刻胶膜。 在与该焊盘相对应的区域中形成通过光致抗蚀剂膜的开口以暴露基底导电膜的部分表面区域。 导电凸块电极沉积在暴露在开口底部的基底导电膜上。 除去光致抗蚀剂膜。 该方法适用于在凸块电极之间形成细间距。

公开(公告)号：US5831441A

公开(公告)日：1998-11-03

申请号：US612750

申请日：1996-03-08

申请人： Toshiyuki Motooka ,  Syuichirou Takahasi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Joji Fujimori ,  Shigeki Harada ,  Masataka Mizukoshi ,  Masashi Takenaka ,  Tatsuro Yamashita

发明人： Toshiyuki Motooka ,  Syuichirou Takahasi ,  Tatsuharu Matsuda ,  Kunio Kodama ,  Joji Fujimori ,  Shigeki Harada ,  Masataka Mizukoshi ,  Masashi Takenaka ,  Tatsuro Yamashita

IPC分类号： G01R1/04 ,  G01R1/073 ,  G01R31/02

CPC分类号： G01R1/0433 ,  G01R1/07364

摘要： A test board used for testing a semiconductor device provided with projection electrodes includes a main board and testing electrodes. The testing electrodes are provided on the main board, each projecting upwardly from the main board. When the semiconductor device is tested, the testing electrodes are electrically connected to the projection electrodes by insertion of the testing electrodes into the projection electrodes. The semiconductor device is mounted on the main board to test the semiconductor device through the testing electrodes.

摘要翻译： 用于测试具有投影电极的半导体器件的测试板包括主板和测试电极。 测试电极设置在主板上，每个从主板向上突出。 当测试半导体器件时，通过将测试电极插入投影电极中，测试电极与投影电极电连接。 半导体器件安装在主板上，以通过测试电极测试半导体器件。