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    EXTREME ULTRAVIOLET RADIATION SOURCE AND METHOD FOR PRODUCING EXTREME ULTRAVIOLET RADIATION
    2.
    发明申请
    EXTREME ULTRAVIOLET RADIATION SOURCE AND METHOD FOR PRODUCING EXTREME ULTRAVIOLET RADIATION 审中-公开
    极端超紫外线辐射源和生产超极紫外线辐射的方法

    公开(公告)号：US20110020752A1

    公开(公告)日：2011-01-27

    申请号：US12810636

    申请日：2008-12-19

    申请人： Yurii Victorovitch Sidelnikov ,  Vadim Yevgenyevich Banine ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun

    发明人： Yurii Victorovitch Sidelnikov ,  Vadim Yevgenyevich Banine ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun

    IPC分类号： G03F7/20 ,  H05G2/00 ,  G03B27/54

    CPC分类号： H05G2/003

    摘要： A radiation source is constructed and arranged to produce extreme ultraviolet radiation. The radiation source includes a chamber, a first electrode at least partially contained in the chamber, a second electrode at least partially contained in the chamber, and a supply constructed and arranged to provide a discharge gas to the chamber. The first electrode and the second electrode are configured to create a discharge in the discharge gas to form a plasma so as to generate the extreme ultraviolet radiation. The source also includes a gas supply constructed and arranged to provide a gas at a partial pressure between about 1 Pa and about 10 Pa at a location near the discharge. The gas is selected from the group consisting of hydrogen, helium, and a mixture of hydrogen and helium.

    摘要翻译： 辐射源被构造和布置成产生极紫外辐射。 辐射源包括腔室，至少部分地容纳在腔室中的第一电极，至少部分地容纳在腔室中的第二电极，以及构造和布置成向腔室提供放电气体的供应源。 第一电极和第二电极被配置为在放电气体中产生放电以形成等离子体，以产生极紫外辐射。 源还包括构造和布置成在靠近放电的位置处提供在约1Pa和约10Pa之间的分压的气体的气体供应。 气体选自氢，氦和氢和氦的混合物。

    Lithographic apparatus and device manufacturing method
    7.
    发明申请
    Lithographic apparatus and device manufacturing method 失效
    平版印刷设备和器件制造方法

    公开(公告)号：US20090040491A1

    公开(公告)日：2009-02-12

    申请号：US11882853

    申请日：2007-08-06

    申请人： Vladimir Vitalevich Ivanov ,  Vadim Yevgenyevich Banine ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun

    发明人： Vladimir Vitalevich Ivanov ,  Vadim Yevgenyevich Banine ,  Konstantin Nikolaevich Koshelev ,  Vladimir Mihailovitch Krivtsun

    IPC分类号： G03B27/54 ,  H05G2/00

    CPC分类号： H05H1/24 ,  B82Y10/00 ,  G03F7/70033 ,  H05G2/003

    摘要： A lithographic system includes a source configured to generate a radiation, the source including a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to control a volume defined by the plasma; a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation; a substrate support configured to support a substrate; and a projection system configured to project the patterned beam of radiation onto the substrate.

    摘要翻译： 光刻系统包括被配置为产生辐射的源，所述源包括阴极和阳极，所述阴极和阳极被配置为在位于放电空间中的燃料中产生放电以产生等离子体，所述放电空间包括 在使用中，配置成调整等离子体的辐射发射以控制由等离子体限定的体积的物质; 配置为保持图案形成装置的图案支撑件，所述图案形成装置被配置为对所述辐射进行图案化以形成图案化的辐射束; 衬底支撑件，其构造成支撑衬底; 以及投影系统，被配置为将所述图案化的辐射束投射到所述基板上。