公开(公告)号：US20140048823A1

公开(公告)日：2014-02-20

申请号：US14110417

申请日：2012-04-03

申请人： Shinkuro Sato ,  Akito Kuramata ,  Yoshikatsu Morishima ,  Kazuyuki Iizuka

发明人： Shinkuro Sato ,  Akito Kuramata ,  Yoshikatsu Morishima ,  Kazuyuki Iizuka

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/267 ,  H01L29/7371 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7827 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/872 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.

摘要翻译： 一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有Ga 2 O 3基板，具有作为主面的以六方晶格排列有氧原子的平面，AlN 形成在Ga 2 O 3衬底上的缓冲层，以及形成在AIN缓冲层上的氮化物半导体层。

公开(公告)号：US07884381B2

公开(公告)日：2011-02-08

申请号：US12461008

申请日：2009-07-29

申请人： Masahiro Arai ,  Kazuyuki Iizuka

发明人： Masahiro Arai ,  Kazuyuki Iizuka

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/227 ,  H01L29/24

CPC分类号： H01L33/0079 ,  H01L33/387 ,  H01L33/46

摘要： A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

摘要翻译： 发光器件包括具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和有源层的半导体多层结构。 反射层设置在半导体多层结构的一个表面的一侧，并且反射从有源层发射的光。 在反射层的相对于半导体多层结构侧的相反侧设置有Si或Ge的支撑基板，并且经由金属接合层支撑半导体多层结构。 背面电极相对于金属接合层的一侧设置在支撑基板的相对侧，并且包括与支撑基板合金化的Au。 背面电极的硬度高于Au的硬度。

公开(公告)号：US20100207146A1

公开(公告)日：2010-08-19

申请号：US12656176

申请日：2010-01-20

申请人： Kazuyuki IIZUKA ,  Masahiro ARAI

发明人： Kazuyuki IIZUKA ,  Masahiro ARAI

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/405

摘要： A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.

摘要翻译： 发光元件包括半导体层叠结构，包括第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的第二半导体层和夹在第一半导体层和第二半导体层之间的有源层， 包括设置在半导体层叠结构的一个表面上的中心电极的表面电极和从中心电极的周边延伸的细线电极，以及设置在半导体叠层结构的另一表面的一部分上的接触部分，其挤出位于 在细线电极的正下方，与细线电极并联，并且包括形成细线电极与允许多个第一区域连接的第二区域之间的最短电流通路的多个第一区域。 表面电极具有这样的布置：中心电极和接触部分之间的最短电流通路比细线电极和第一区域之间的最短电流通路长，并且细线电极端部之间的最短电流通路 并且接触部分不小于细线电极和第一区域之间的最短电流通路。

公开(公告)号：US20080093612A1

公开(公告)日：2008-04-24

申请号：US11907976

申请日：2007-10-19

申请人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

发明人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/405

摘要： A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

摘要翻译： 在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。 光提取层4由具有不同组成比的多个层23,24形成。 在包括最外层的层23,24上形成凹凸22，以提供作为粗糙表面的主表面S.

公开(公告)号：US07300643B2

公开(公告)日：2007-11-27

申请号：US10473191

申请日：2002-04-01

申请人： Kiyoshi Otsuka ,  Sakae Takenaka ,  Kiyozumi Nakamura ,  Kazuyuki Iizuka

发明人： Kiyoshi Otsuka ,  Sakae Takenaka ,  Kiyozumi Nakamura ,  Kazuyuki Iizuka

IPC分类号： B01J7/00 ,  C01B3/10

CPC分类号： B01J8/0285 ,  B01J8/025 ,  B01J2208/00212 ,  B01J2208/00309 ,  B01J2208/00415 ,  B01J2208/00495 ,  B01J2208/00539 ,  C01B3/061 ,  C01B3/10 ,  Y02E60/36

摘要： With a method producing hydrogen by making iron or iron oxide contact water, water vapor, or a gas including water vapor, a hydrogen generating medium, which has a high hydrogen generation reaction rate and is resistant to a repetition of oxidation-reduction without degrading its activity, is provided by adding a different metal (such as Ti, Zr, V, Nb, Cr, Mo, Al, Ga, Mg, Sc, Ni, Cu, etc.) other than the iron to the iron or the iron oxide.

摘要翻译： 通过使铁或氧化铁与水接触的方法，水蒸汽或包括水蒸汽的气体，产氢介质，氢生成反应速度高，耐重复氧化还原而不劣化 活性通过向铁或氧化铁中添加除铁以外的不同的金属（例如Ti，Zr，V，Nb，Cr，Mo，Al，Ga，Mg，Sc，Ni，Cu等） 。

公开(公告)号：US07294200B2

公开(公告)日：2007-11-13

申请号：US10396831

申请日：2003-03-26

申请人： Hajime Fujikura ,  Kazuyuki Iizuka

发明人： Hajime Fujikura ,  Kazuyuki Iizuka

IPC分类号： C30B23/00 ,  H01L21/00 ,  H01L29/221

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.

摘要翻译： 一种制造氮化物半导体晶体的方法，其包括步骤（a），（b）和（c），其顺序如下：步骤（a）用于在衬底上形成由氮化物半导体制成的微细晶粒; 用于形成氮化物半导体岛结构的步骤（b），所述氮化物半导体岛结构具有使用所述细晶粒子作为核的相对于所述衬底的表面倾斜的多个面; 以及用于使氮化物半导体岛结构在与衬底的表面平行的方向上生长以使多个氮化物半导体岛结构彼此合并从而形成具有平坦表面的氮化物半导体晶体层的步骤（c） ; 步骤（a） - （c）在相同的生长装置中连续进行。

公开(公告)号：US20070075328A1

公开(公告)日：2007-04-05

申请号：US11511220

申请日：2006-08-29

申请人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

发明人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/025 ,  H01L33/30 ,  H01L33/42

摘要： A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.

摘要翻译： 半导体发光器件具有半导体衬底，n型覆层，有源层，p型覆层，p型缓冲层，p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下的低Mg浓度缓冲层，膜厚为 50nm以上。

公开(公告)号：US20070075327A1

公开(公告)日：2007-04-05

申请号：US11485420

申请日：2006-07-13

申请人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

发明人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/30

摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

摘要翻译： 半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层， 型包覆层和p型接触层。 缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L， 型接触层。

公开(公告)号：US09153648B2

公开(公告)日：2015-10-06

申请号：US14110417

申请日：2012-04-03

申请人： Shinkuro Sato ,  Akito Kuramata ,  Yoshikatsu Morishima ,  Kazuyuki Iizuka

发明人： Shinkuro Sato ,  Akito Kuramata ,  Yoshikatsu Morishima ,  Kazuyuki Iizuka

IPC分类号： H01L29/20 ,  H01L29/267 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  C23C16/02 ,  C23C16/30 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L29/2003 ,  C23C16/0218 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/267 ,  H01L29/7371 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7827 ,  H01L29/8122 ,  H01L29/8128 ,  H01L29/872 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.

摘要翻译： 一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有以二氧化硅基板为主面的半导体层叠体，所述Ga 2 O 3基板以六方晶格排列有氧原子的面为主面， 形成在Ga 2 O 3衬底上的缓冲层，以及形成在AlN缓冲层上的氮化物半导体层。

公开(公告)号：US20140027770A1

公开(公告)日：2014-01-30

申请号：US14110420

申请日：2012-04-03

申请人： Kazuyuki Iizuka ,  Yoshikatsu Morishima ,  Shinkuro Sato

发明人： Kazuyuki Iizuka ,  Yoshikatsu Morishima ,  Shinkuro Sato

IPC分类号： H01L29/267

CPC分类号： H01L29/267 ,  C23C16/0272 ,  C23C16/303 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/872 ,  H01L33/007 ,  H01L33/12

摘要： A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more.

摘要翻译： 厚度方向电阻率小的半导体层叠体; 制造半导体层叠体的方法; 以及配备有半导体层叠体的半导体元件。 包括包含Ga 2 O 3衬底的半导体层叠体; 形成在Ga 2 O 3衬底上的AlGalnN缓冲层; 形成在AlGalnN缓冲层上并含有Si的氮化物半导体层; 以及形成在位于氮化物半导体层中的AlGalnN缓冲层侧的区域中的Si浓度为5×1018 / cm3以上的Si浓度区域。