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公开(公告)号：US20130040245A1
公开(公告)日：2013-02-14
申请号：US13205004
申请日：2011-08-08
Applicant: Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J. de Villiers , Dan Millward , Jianming Zhou , Michael D. Hyatt
Inventor： Scott L. Light , Kaveri Jain , Zishu Zhang , Anton J. de Villiers , Dan Millward , Jianming Zhou , Michael D. Hyatt
IPC: G03F7/20
CPC classification number: G03F7/0035
Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.
Abstract translation: 一种处理衬底的方法包括在衬底上形成第一光致抗蚀剂。 第一光致抗蚀剂的一部分选择性地暴露于光化能，然后第一光致抗蚀剂显影为负色调以除去第一光致抗蚀剂的未曝光部分。 在显影的第一光致抗蚀剂上的基底上形成第二光致抗蚀剂。 第二光致抗蚀剂的一部分选择性地暴露于光化能，然后第二光致抗蚀剂显色以除去第二光致抗蚀剂的未曝光部分，并在包含显影的第一光致抗蚀剂和显影的第二光致抗蚀剂的基板上形成图案。 公开了其他实现。
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公开(公告)号：US20120314196A1
公开(公告)日：2012-12-13
申请号：US13159245
申请日：2011-06-13
Applicant: Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
Inventor： Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
CPC classification number: G02B26/06 , G03F7/70091 , G03F7/70125 , G03F7/70258 , G03F7/70308 , G03F7/705 , G03F7/706
Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
Abstract translation: 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。
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3.发明申请IMAGING DEVICES, METHODS OF FORMING SAME, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权成像装置，其形成方法和形成半导体器件结构的方法公开(公告)号：US20120178026A1
公开(公告)日：2012-07-12
申请号：US12986836
申请日：2011-01-07
Applicant: Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
Inventor： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton J. DeVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan B. Millward
CPC classification number: G03F1/38 , G03F1/50 , G03F1/54 , Y10T29/49002
Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.
Abstract translation: 一种成像装置，包括至少一个阵列图案区域和至少一个衰减区域。 所述至少一个阵列图案区域中的多个成像特征和所述至少一个衰减区域中的多个辅助特征基本上彼此相同，并且基本上形成为间距。 还公开了形成成像装置的方法和形成半导体器件结构的方法。
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4.发明授权Method for producing polymers with controlled molecular weight and end group functionality using photopolymerization in microemulsions 有权使用微乳液中的光聚合制备具有受控分子量和端基官能度的聚合物的方法公开(公告)号：US07226957B1
公开(公告)日：2007-06-05
申请号：US10699994
申请日：2003-11-03
Applicant: Alec Scranton , Kaveri Jain
Inventor： Alec Scranton , Kaveri Jain
CPC classification number: C08F2/22 , C08F2/48 , C08F265/04 , C08F291/00 , C08F293/005
Abstract: A method for producing polymers with controlled molecular weight and desired end functionalities and the resulting polymers. The method comprises a) forming a microemulsion comprising monomer, water, and an effective amount of an effective surfactant, b) adding to the microemulsion an amount of a water-soluble photo-initiator system wherein the initiator system produces one type of monomer-soluble radical active centers and wherein the radical active centers contain desired end group functionalities for a polymer or oligomer, and c) illuminating the microemulsion to photoinitiate polymerization of the monomer wherein the illuminating is according to a temporal and spatial illumination scheme, and wherein the amount of the initiator system and the temporal illumination scheme are chosen to produce a desired molecular weight of the polymer or oligomer. The microemulsion can further comprise an effective amount of an effective co-surfactant. The method can be used to produce polymers and copolymers.
Abstract translation: 用于生产具有受控分子量和期望的末端官能度的聚合物的方法以及所得的聚合物。 该方法包括a）形成包含单体，水和有效量的有效表面活性剂的微乳液，b）向微乳液中加入一定量的水溶性光引发剂体系，其中引发剂体系产生一种类型的单体可溶的 自由基活性中心，其中自由基活性中心含有聚合物或低聚物的所需端基官能团，和c）照射微乳液以光引发单体的聚合，其中照明是根据时间和空间照明方案，并且其中 选择引发剂体系和时间照明方案以产生聚合物或低聚物的所需分子量。 微乳液可进一步包含有效量的有效助表面活性剂。 该方法可用于生产聚合物和共聚物。
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公开(公告)号：US08486611B2
公开(公告)日：2013-07-16
申请号：US12836495
申请日：2010-07-14
Applicant: Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
Inventor： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
IPC: G03F7/26
CPC classification number: H01L21/76879 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/10882 , H01L27/10888
Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。
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Patent Agency Ranking
公开(公告)号：US20120257177A1
公开(公告)日：2012-10-11
申请号：US13080666
申请日：2011-04-06
Applicant: JIANMING ZHOU , SCOTT LIGHT , DAN MILLWARD , YUAN HE , KAVERI JAIN , LIJING GOU , ZISHU ZHANG , ANTON DEVILLIERS , MICHAEL HYATT
Inventor： JIANMING ZHOU , SCOTT LIGHT , DAN MILLWARD , YUAN HE , KAVERI JAIN , LIJING GOU , ZISHU ZHANG , ANTON DEVILLIERS , MICHAEL HYATT
IPC: G03B27/52
CPC classification number: G03F7/70891 , G03F7/70125
Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.
Abstract translation: 在成像过程中减少透镜加热效果的方法包括根据照明源和掩模版设计确定透镜上的热负荷位置，根据热负荷位置获得透镜响应特性，并利用热量 加载位置和镜头响应表征以产生透镜加热灵敏度图。
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公开(公告)号：US20120038895A1
公开(公告)日：2012-02-16
申请号：US12857316
申请日：2010-08-16
Applicant: Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
Inventor： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
CPC classification number: G03F7/70116 , G03F7/70891
Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
Abstract translation: 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。
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8.发明申请METHODS OF FORMING REVERSED PATTERNS IN A SUBSTRATE AND SEMICONDUCTOR STRUCTURES FORMED DURING SAME 有权在基板中形成反向图案的方法和在其中形成的半导体结构公开(公告)号：US20110052883A1
公开(公告)日：2011-03-03
申请号：US12552879
申请日：2009-09-02
Applicant: Kaveri Jain , Anton J. deVilliers
Inventor： Kaveri Jain , Anton J. deVilliers
CPC classification number: H01L21/3086 , G03F7/2022 , Y10T428/24802
Abstract: A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods.
Abstract translation: 在基板中形成反转图案的方法。 衬底上的抗蚀剂被曝光和显影以在其中形成图案，图案化抗蚀剂具有第一极性。 图案化抗蚀剂的极性反转到第二极性，并且在具有第二极性的图案化抗蚀剂上形成反转膜。 去除具有第二极性的图案化抗蚀剂，在反转膜中形成图案。 然后将反转膜中的图案转移到基底。 公开了在衬底中形成反向图案的附加方法，以及在该方法期间形成的半导体结构。
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公开(公告)号：US09235134B2
公开(公告)日：2016-01-12
申请号：US12857316
申请日：2010-08-16
Applicant: Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
Inventor： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
CPC classification number: G03F7/70116 , G03F7/70891
Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
Abstract translation: 公开了光刻设备和方法。 一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。 同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。 第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。
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公开(公告)号：US08736814B2
公开(公告)日：2014-05-27
申请号：US13159245
申请日：2011-06-13
Applicant: Yuan He , Jianming Zhou , Scott L. Light , Anton deVilliers , Kaveri Jain , Zishu Zhang , Dan Millward
Inventor： Yuan He , Jianming Zhou , Scott L. Light , Anton deVilliers , Kaveri Jain , Zishu Zhang , Dan Millward
CPC classification number: G02B26/06 , G03F7/70091 , G03F7/70125 , G03F7/70258 , G03F7/70308 , G03F7/705 , G03F7/706
Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
Abstract translation: 一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。 这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。 所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。 可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。 描述其他实施例。
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