Polishing slurry composition
    1.
    发明授权

    公开(公告)号:US12187919B2

    公开(公告)日:2025-01-07

    申请号:US17552932

    申请日:2021-12-16

    Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.

    Cleaning solution detection device

    公开(公告)号:US11883857B2

    公开(公告)日:2024-01-30

    申请号:US17505185

    申请日:2021-10-19

    CPC classification number: B08B3/02 B08B5/04 B08B2203/0282

    Abstract: A cleaning solution detection device includes a transfer part configured to unload and transfer a substrate having a surface to which a cleaning solution is applied when a cleaning process is completed, a detector configured to detect the cleaning solution that falls from the surface of the substrate in a process in which the substrate is unloaded and transferred by the transfer part, and a controller configured to determine whether a dangerous situation occurs due to a fall of the cleaning solution based on information detected by the detector.

    Substrate processing apparatus and system including the same

    公开(公告)号:US20230402297A1

    公开(公告)日:2023-12-14

    申请号:US18131099

    申请日:2023-04-05

    CPC classification number: H01L21/67034 H01L21/68785

    Abstract: A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having a processing space in which substrate processing is performed therein, one or more exhaust lines connected to the chamber and configured to discharge a processing fluid from the processing space to an outside of the chamber, a supporting chuck disposed in the processing space, configured to support the substrate from below so that the substrate is disposed on an upper portion of the supporting chuck, and having an inner space configured to accommodate a first processing fluid, and one or more first supply lines configured to receive the first processing fluid from the outside of the chamber and transfer the first processing fluid to the inner space of the supporting chuck. In addition, various embodiments may be possible.

    SUBSTRATE TREATING APPARATUS AND CLEANING NOZZLE USED THEREIN

    公开(公告)号:US20230271228A1

    公开(公告)日:2023-08-31

    申请号:US18112398

    申请日:2023-02-21

    Inventor: Geun Sik YOON

    CPC classification number: B08B3/022 B08B1/002 B08B3/10 H01L21/67051

    Abstract: Disclosed are a substrate processing apparatus and a cleaning nozzle for substrate processing included therein. More particularly, a substrate processing apparatus, including: a support for holding a disk-shaped substrate; and a cleaning nozzle for spraying a mixed fluid, in which liquid and gas are mixed, to a surface of the substrate in a slit shape through a slit-shaped discharge port to remove foreign substances remaining on the substrate with the mixed fluid discharged from the discharge port is provided. Accordingly, a substrate processing apparatus capable of improving the mixing uniformity of gas and liquid in a slit-shaped discharge fluid; and a cleaning nozzle for substrate processing used therefor are provided.

    POLISHING SLURRY COMPOSITION FOR STI PROCESS

    公开(公告)号:US20220177727A1

    公开(公告)日:2022-06-09

    申请号:US17415703

    申请日:2019-07-11

    Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

    POLISHING SLURRY COMPOSITION
    9.
    发明申请

    公开(公告)号:US20220127495A1

    公开(公告)日:2022-04-28

    申请号:US17511582

    申请日:2021-10-27

    Abstract: A polishing slurry composition is provided. The polishing slurry composition includes abrasive particles, an oxidizer, an iron-containing catalyst, and a stabilizer, and a retention rate of the oxidizer according to Equation 1 is 70% or greater. Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition)  [Equation 1]

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