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1.发明申请公开(公告)号：US20160065914A1
公开(公告)日：2016-03-03
申请号：US14797656
申请日：2015-07-13
Applicant: Ha-Kyu CHOI , Chang-Rok MOON , June-Taeg LEE , Hyung-Jun KIM
Inventor： Ha-Kyu CHOI , Chang-Rok MOON , June-Taeg LEE , Hyung-Jun KIM
CPC classification number: H04N9/045 , G02B5/201 , H01L27/14621
Abstract: An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.
Abstract translation: 提供电子设备。 电子设备包括：第一无机滤色器，包括光入射的第一表面和与第一表面相对的第二表面; 以及设置在第一无机滤色器的第一表面上的第一有机滤色器。
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2.发明申请公开(公告)号：US20150287766A1
公开(公告)日：2015-10-08
申请号：US14676399
申请日：2015-04-01
Applicant: Tae-Chan Kim , June-Taeg Lee , Dong-Ki Min , Sang-Chul Sul , Myung-Won Lee , Tae-Yon Lee , Jung-Kyu Jung
Inventor： Tae-Chan Kim , June-Taeg Lee , Dong-Ki Min , Sang-Chul Sul , Myung-Won Lee , Tae-Yon Lee , Jung-Kyu Jung
IPC: H01L27/30 , H01L27/146
CPC classification number: H01L27/307 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14625 , H01L27/14641 , H01L27/14645 , H01L27/14649 , H01L27/14665
Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a visible light detection layer and an infrared light detection layer disposed on the visible light detection layer. The visible light detection layer includes visible light pixels and color filters configured to detect visible light to output first charges. The infrared light detection layer includes at least one infrared light pixel configured to detect infrared light to output second charges.
Abstract translation: 提供图像传感器的单位像素。 单位像素包括可见光检测层和设置在可见光检测层上的红外光检测层。 可见光检测层包括可见光像素和被配置为检测可见光以输出第一电荷的滤色器。 红外光检测层包括被配置为检测红外光以输出第二电荷的至少一个红外光像素。
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3.发明授权Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor 有权具有吸湿阻挡层的图像传感器及其制造方法以及包括图像传感器的装置公开(公告)号：US08847297B2
公开(公告)日：2014-09-30
申请号：US12977950
申请日：2010-12-23
Applicant: Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
Inventor： Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
IPC: H01L31/06 , H01L27/146
CPC classification number: H01L27/14636 , H01L23/564 , H01L27/14618 , H01L27/14621 , H01L27/14632 , H01L27/14638 , H01L27/1464 , H01L27/14687 , H01L2224/48095 , H01L2224/48227 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.
Abstract translation: 提供了图像传感器及其制造方法以及包括图像传感器的装置，其包括形成有光电转换装置的基板，形成在基板上的互连结构，并且包括多个金属间介电层和多个金属互连 金属间电介质层，所述互连结构限定对应于所述光电转换装置对准的空腔;保形地形成在所述互连结构的顶部和所述空腔中的吸湿阻挡层; 以及导光单元，其形成在吸湿阻挡层上并且包括填充空腔的透光材料，其中吸湿阻挡层在空腔的两侧和底部以及多个顶部表面上形成均匀的厚度 金属间电介质层。
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4.发明申请Image Sensor Devices Having Peripheral Circuits Therein that Use Light Guide Materials as Electrical Insulators 有权具有使用导光材料作为电绝缘体的外围电路的图像传感器设备公开(公告)号：US20110176022A1
公开(公告)日：2011-07-21
申请号：US12964043
申请日：2010-12-09
Applicant: Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
Inventor： Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
IPC: H04N5/228
CPC classification number: H04N5/374 , H01L27/14618 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L2924/0002 , H04N5/2257 , H01L2924/00
Abstract: An image sensor includes an array of image sensor cells, on a substrate, and a peripheral circuit region extending adjacent the array of image sensor cells. The array of image sensor cells includes a plurality of lens elements and a plurality of color filters extending adjacent the plurality of lens elements. A plurality of photodiodes is provided in the substrate. The plurality of photodiodes are aligned to corresponding ones of the plurality of lens elements. An interconnection structure is also provided, which extends between the plurality of photodiodes and the plurality of color filters. The interconnection structure has an array of cavities therein that are aligned to corresponding ones of the plurality of photodiodes and are filled with a light guide material. The peripheral circuit region includes a metal interconnect pattern and an electrically conductive pad on the metal interconnect pattern. An electrically insulating layer extends on the electrically conductive pad. The electrically insulating layer is formed of the light guide material.
Abstract translation: 图像传感器包括在基板上的图像传感器单元的阵列和与图像传感器单元阵列相邻延伸的外围电路区域。 图像传感器单元的阵列包括多个透镜元件和与多个透镜元件相邻延伸的多个滤色器。 在基板中设置多个光电二极管。 多个光电二极管与多个透镜元件中的相应的一个对准。 还提供互连结构，其在多个光电二极管和多个滤色器之间延伸。 互连结构具有其中的空腔阵列，其与多个光电二极管中的相应的一个对准，并且填充有导光材料。 外围电路区域包括金属互连图案和金属互连图案上的导电焊盘。 电绝缘层在导电垫上延伸。 电绝缘层由导光材料形成。
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5.发明申请IMAGE SENSOR, FABRICATING METHOD THEREOF, AND DEVICE COMPRISING THE IMAGE SENSOR 有权图像传感器，其制造方法和包含图像传感器的装置公开(公告)号：US20110163364A1
公开(公告)日：2011-07-07
申请号：US12977950
申请日：2010-12-23
Applicant: Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
Inventor： Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
IPC: H01L31/062 , H01L31/113 , H01L27/14
CPC classification number: H01L27/14636 , H01L23/564 , H01L27/14618 , H01L27/14621 , H01L27/14632 , H01L27/14638 , H01L27/1464 , H01L27/14687 , H01L2224/48095 , H01L2224/48227 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.
Abstract translation: 提供了图像传感器及其制造方法以及包括图像传感器的装置，其包括形成有光电转换装置的基板，形成在基板上的互连结构，并且包括多个金属间介电层和多个金属互连 金属间电介质层，所述互连结构限定对应于所述光电转换装置对准的空腔;保形地形成在所述互连结构的顶部和所述空腔中的吸湿阻挡层; 以及导光单元，其形成在吸湿阻挡层上并且包括填充空腔的透光材料，其中吸湿阻挡层在空腔的两侧和底部以及多个顶部表面上形成均匀的厚度 金属间电介质层。
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Patent Agency Ranking
公开(公告)号：US20100009493A1
公开(公告)日：2010-01-14
申请号：US12458087
申请日：2009-06-30
Applicant: Jung-Saeng Kim , June-Taeg Lee , Sung-Kwan Kim , Jeong-Wook Ko
Inventor： Jung-Saeng Kim , June-Taeg Lee , Sung-Kwan Kim , Jeong-Wook Ko
IPC: H01L31/18
CPC classification number: H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685
Abstract: The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.
Abstract translation: 制造图像传感器的方法包括提供包括第一像素区域的半导体衬底，首先在第一像素区域上形成第一图案，首先在第一像素区域上执行第一图案的回流以形成子微透镜， 在所述亚微透镜上形成第二图案，并且第二图案执行所述第二图案的回流以形成覆盖所述副微透镜的第一微透镜。
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公开(公告)号：US07504614B2
公开(公告)日：2009-03-17
申请号：US11336906
申请日：2006-01-23
Applicant: Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
Inventor： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
CPC classification number: H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
Abstract: Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.
Abstract translation: 公开了一种图像传感器及其制造方法。 图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。 层间绝缘膜包含多层互连层。 滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。 钝化层插在滤色器层和层间绝缘膜之间。
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8.发明授权Image sensor devices having peripheral circuits therein that use light guide materials as electrical insulators 有权其中具有使用光导材料作为电绝缘体的外围电路的图像传感器装置公开(公告)号：US08482641B2
公开(公告)日：2013-07-09
申请号：US12964043
申请日：2010-12-09
Applicant: Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
Inventor： Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
CPC classification number: H04N5/374 , H01L27/14618 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L2924/0002 , H04N5/2257 , H01L2924/00
Abstract: An image sensor includes an array of image sensor cells, on a substrate, and a peripheral circuit region extending adjacent the array of image sensor cells. The array of image sensor cells includes a plurality of lens elements and a plurality of color filters extending adjacent the plurality of lens elements. A plurality of photodiodes is provided in the substrate. The plurality of photodiodes are aligned to corresponding ones of the plurality of lens elements. An interconnection structure is also provided, which extends between the plurality of photodiodes and the plurality of color filters. The interconnection structure has an array of cavities therein that are aligned to corresponding ones of the plurality of photodiodes and are filled with a light guide material. The peripheral circuit region includes a metal interconnect pattern and an electrically conductive pad on the metal interconnect pattern. An electrically insulating layer extends on the electrically conductive pad. The electrically insulating layer is formed of the light guide material.
Abstract translation: 图像传感器包括在基板上的图像传感器单元的阵列和与图像传感器单元阵列相邻延伸的外围电路区域。 图像传感器单元的阵列包括多个透镜元件和与多个透镜元件相邻延伸的多个滤色器。 在基板中设置多个光电二极管。 多个光电二极管与多个透镜元件中的相应的一个对准。 还提供互连结构，其在多个光电二极管和多个滤色器之间延伸。 互连结构具有其中的空腔阵列，其与多个光电二极管中的相应的一个对准，并且填充有导光材料。 外围电路区域包括金属互连图案和金属互连图案上的导电焊盘。 电绝缘层在导电垫上延伸。 电绝缘层由导光材料形成。
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公开(公告)号：US08334554B2
公开(公告)日：2012-12-18
申请号：US12380844
申请日：2009-03-04
Applicant: Sung-Kwan Kim , June-Taeg Lee , Jeong-Wook Ko , Jung-Saeng Kim
Inventor： Sung-Kwan Kim , June-Taeg Lee , Jeong-Wook Ko , Jung-Saeng Kim
IPC: H01L31/062 , H01L31/113
CPC classification number: H01L27/14685 , H01L27/14625 , H01L27/14627 , H01L27/14632
Abstract: An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.
Abstract translation: 图像传感器包括其中形成有光电转换元件的衬底的第一区域，并且包括在第一区域外部的衬底的第二区域。 图像传感器包括多个透镜，多个压花结构和保护层。 透镜形成在第一区域上。 压花结构形成在第二区域上，并且压花结构彼此分离。 保护层形成在透镜和防止裂纹扩展的压花结构之上。
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公开(公告)号：US20090224347A1
公开(公告)日：2009-09-10
申请号：US12380844
申请日：2009-03-04
Applicant: Sung-Kwan Kim , June-Taeg Lee , Jeong-Wook Ko , Jung-Saeng Kim
Inventor： Sung-Kwan Kim , June-Taeg Lee , Jeong-Wook Ko , Jung-Saeng Kim
IPC: H01L31/0232
CPC classification number: H01L27/14685 , H01L27/14625 , H01L27/14627 , H01L27/14632
Abstract: An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.
Abstract translation: 图像传感器包括其中形成有光电转换元件的衬底的第一区域，并且包括在第一区域外部的衬底的第二区域。 图像传感器包括多个透镜，多个压花结构和保护层。 透镜形成在第一区域上。 压花结构形成在第二区域上，并且压花结构彼此分离。 保护层形成在透镜和防止裂纹扩展的压花结构之上。
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