公开(公告)号：US08653546B2

公开(公告)日：2014-02-18

申请号：US12899535

申请日：2010-10-06

Applicant: Jui-Hung Yeh

Inventor： Jui-Hung Yeh

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/642

Abstract: A light-emitting device includes a light-emitting stacked layer having an active layer, and a composite substrate located under the light-emitting stacked layer. The composite substrate includes a supportive substrate having a top surface and a bottom surface non-parallel to the active layer; a metal substrate located under the supportive substrate; and a reflective layer located between the supportive substrate and the metal substrate.

Abstract translation: 发光装置包括具有活性层的发光层叠层和位于发光层叠层下方的复合基板。 复合衬底包括支撑衬底，其具有不平行于有源层的顶表面和底表面; 位于支撑基板下方的金属基板; 以及位于支撑基板和金属基板之间的反射层。

公开(公告)号：US08207539B2

公开(公告)日：2012-06-26

申请号：US12481048

申请日：2009-06-09

Applicant: Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chien-Yuan Wang ,  Yen-Wen Chen ,  Jui-Hung Yeh ,  Shih-Chin Hung ,  Yu-Wei Tu ,  Chun-Yi Wu ,  Wei-Chih Peng

Inventor： Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chien-Yuan Wang ,  Yen-Wen Chen ,  Jui-Hung Yeh ,  Shih-Chin Hung ,  Yu-Wei Tu ,  Chun-Yi Wu ,  Wei-Chih Peng

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/382 ,  H01L33/387 ,  H01L33/642

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract translation: 具有减薄结构的半导体发光器件包括在半导体发光结构和载体之间形成的薄化结构。 该制造方法包括以下步骤：在衬底上形成半导体发光结构; 将半导体发光结构附着到支撑体上; 使衬底变薄以形成薄的结构; 将载体形成或附着到薄化的基底上; 并移除支持。

公开(公告)号：US20110227120A1

公开(公告)日：2011-09-22

申请号：US13152026

申请日：2011-06-02

Applicant: Yu-Chen YANG ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

Inventor： Yu-Chen YANG ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

IPC: H01L33/60

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/641 ,  H01L2224/48463 ,  H01L2933/0083

Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm2 and 6.2×104 μm2.

Abstract translation: 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×10 4μm2和​​6.2×10 4μm2之间。

公开(公告)号：US20100101639A1

公开(公告)日：2010-04-29

申请号：US12289292

申请日：2008-10-24

Applicant: Jui Hung Yeh

Inventor： Jui Hung Yeh

IPC: H01L31/0224 ,  H01L33/00 ,  H01L31/18

CPC classification number: H01L33/62 ,  B23K35/0238 ,  B23K35/24 ,  B23K35/26 ,  B23K35/262 ,  B23K35/264 ,  B23K35/3013 ,  C23C28/021 ,  C23C28/023 ,  C23C30/00 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L31/022425 ,  H01L31/0512 ,  H01L2224/0401 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/81801 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/01032

Abstract: An optoelectronic device having a multi-layer solder is disclosed. It included a semiconductor stack, an ohmic layer and a multi-layer solder including a plurality of first type conductive material layers and a plurality of second type conductive material layers. The plurality of first type conductive material layers and the plurality of second type conductive material layers are interlaced each other and the first type conductive material layer is an alloy layer and the second type conductive material layer is a metal layer.

Abstract translation: 公开了具有多层焊料的光电器件。 它包括半导体堆叠，欧姆层和包括多个第一类型导电材料层和多个第二类型导电材料层的多层焊料。 多个第一导电材料层和多个第二导电材料层彼此交织，第一导电材料层是合金层，第二导电材料层是金属层。

公开(公告)号：US06451161B1

公开(公告)日：2002-09-17

申请号：US09546689

申请日：2000-04-10

Applicant: David Guang-Kai Jeng ,  Hong-Ji Lee ,  Fred Yingyi Chen ,  Ching-An Chen ,  Tsung-Nane Kuo ,  Jui-Hung Yeh

Inventor： David Guang-Kai Jeng ,  Hong-Ji Lee ,  Fred Yingyi Chen ,  Ching-An Chen ,  Tsung-Nane Kuo ,  Jui-Hung Yeh

IPC: C23F100

CPC classification number: H01J37/321

Abstract: A method and a reactor of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention includes a vacuum chamber having a dielectric ceiling thereof and a unique coil configuration atop on the dielectric ceiling, wherein the dielectric ceiling is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.

Abstract translation: 在本发明中公开了一种具有高感应等离子体密度和高均匀度的反应性物质的等离子体处理晶片的方法和反应器。 本发明的电感耦合等离子体反应器包括一个具有电介质天花板的真空室和位于电介质天花板顶上的独特线圈结构，其中电介质天花板根据其形状被设计成具有不同的高度，例如平面， 碟形或帽形电介质天花板，用于将RF功率耦合到室中以激发等离子体。 独特的线圈构造包含串联或并联布置的多个螺旋线圈，以提供用于大晶片处理的高密度均匀离子等离子体。

公开(公告)号：US20050104078A1

公开(公告)日：2005-05-19

申请号：US10705929

申请日：2003-11-13

Applicant: Wei-Tai Cheng ,  Jui-Hung Yeh

Inventor： Wei-Tai Cheng ,  Jui-Hung Yeh

IPC: H01L33/46 ,  H01L33/00

CPC classification number: H01L33/46

Abstract: A light-emitting diode (LED) includes a plurality of reflective layers stacked over each other and each comprising a distributed Bragg reflector, a substrate, an N type semiconductor formed on the substrate, a light emitting layer formed on the N type semiconductor layer and a P type semiconductor formed on the light emitting layer. The stack of the reflective layers is formed under the substrate or the stack is formed between the substrate and the N type semiconductor layer. The reflective layers receive and reflect light incident at different angles thereby alleviating escape of light from the light emitting diode and enhancing overall brightness of the light emitting diode.

Abstract translation: 发光二极管（LED）包括彼此堆叠的多个反射层，每个反射层包括分布式布拉格反射器，衬底，形成在衬底上的N型半导体，形成在N型半导体层上的发光层和 形成在发光层上的P型半导体。 反射层的叠层形成在衬底下方，或者叠层形成在衬底和N型半导体层之间。 反射层接收和反射以不同角度入射的光，从而减轻来自发光二极管的光的逸出并提高发光二极管的整体亮度。

公开(公告)号：US08872204B2

公开(公告)日：2014-10-28

申请号：US13152026

申请日：2011-06-02

Applicant: Yu-Chen Yang ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

Inventor： Yu-Chen Yang ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

IPC: H01L33/60 ,  H01L33/38 ,  H01L33/20 ,  H01L33/64 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/641 ,  H01L2224/48463 ,  H01L2933/0083

Abstract: A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm2 and 6.2×104 μm2.

Abstract translation: 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×10 4μm2和​​6.2×10 4μm2之间。

公开(公告)号：US08344392B2

公开(公告)日：2013-01-01

申请号：US13106310

申请日：2011-05-12

Applicant: Jui Hung Yeh ,  Chun Kai Wang ,  Wei Yu Yen ,  Yu Yao Lin ,  Chien Fu Shen ,  De Shan Kuo ,  Ting Chia Ko

Inventor： Jui Hung Yeh ,  Chun Kai Wang ,  Wei Yu Yen ,  Yu Yao Lin ,  Chien Fu Shen ,  De Shan Kuo ,  Ting Chia Ko

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L2933/0016

Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Abstract translation: 发光元件包括：发光层，包括：第一半导体层; 形成在所述第一半导体层上的有源层; 以及形成在所述有源层上的第二半导体层; 通过所述第二半导体层形成的凹陷结构，所述有源层在所述第一半导体层中延伸，其中所述第一半导体层包括由所述凹部结构限定的接触区域; 第一电极结构，包括在第一半导体层的接触区域上的第一接触部分和从第一接触部分向第一半导体层侧向延伸的第二接触部分; 以及形成在第二半导体层和有源层的侧表面上的绝缘层，以使第二半导体层和有源层与第一接触部分绝缘。

公开(公告)号：US08569775B2

公开(公告)日：2013-10-29

申请号：US13428974

申请日：2012-03-23

Applicant: Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

Inventor： Li-Ping Jou ,  Yu-Chen Yang ,  Jui-Hung Yeh

IPC: H01L33/00

CPC classification number: H01L27/156 ,  H01L27/153 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/62 ,  H01L2933/0016

Abstract: An LED array having N light-emitting diode units (N≧3) comprises a permanent substrate, a bonding layer on the permanent substrate, a second conductive layer on the bonding layer, a second isolation layer on the second conductive layer, a crossover metal layer on the second isolation layer, a first isolation layer on the crossover metal layer, a conductive connecting layer on the first isolation layer, an epitaxial structure on the conductive connecting layer, and a first electrode layer on the epitaxial structure. The light-emitting diode units are electrically connected with each other by the crossover metal layer.

Abstract translation: 具有N个发光二极管单元（N> = 3）的LED阵列包括永久基板，永久基板上的接合层，接合层上的第二导电层，第二导电层上的第二隔离层，交叉 第二隔离层上的金属层，交叉金属层上的第一隔离层，第一隔离层上的导电连接层，导电连接层上的外延结构，外延结构上的第一电极层。 发光二极管单元通过交叉金属层彼此电连接。

公开(公告)号：US20120286317A1

公开(公告)日：2012-11-15

申请号：US13106310

申请日：2011-05-12

Applicant: Jui Hung Yeh ,  Chun Kai Wang ,  Wei Yu Yen ,  Yu Yao Lin ,  Chien Fu Shen ,  De Shan Kuo ,  Ting Chia Ko

Inventor： Jui Hung Yeh ,  Chun Kai Wang ,  Wei Yu Yen ,  Yu Yao Lin ,  Chien Fu Shen ,  De Shan Kuo ,  Ting Chia Ko

IPC: H01L33/62

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L2933/0016

Abstract: A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.

Abstract translation: 发光元件包括：发光层，包括：第一半导体层; 形成在所述第一半导体层上的有源层; 以及形成在所述有源层上的第二半导体层; 通过所述第二半导体层形成的凹陷结构，所述有源层在所述第一半导体层中延伸，其中所述第一半导体层包括由所述凹部结构限定的接触区域; 第一电极结构，包括在第一半导体层的接触区域上的第一接触部分和从第一接触部分向第一半导体层侧向延伸的第二接触部分; 以及形成在第二半导体层和有源层的侧表面上的绝缘层，以使第二半导体层和有源层与第一接触部分绝缘。