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    Method for manufacturing optoelectronic integrated circuits
    3.
    发明授权
    Method for manufacturing optoelectronic integrated circuits 失效
    制造光电集成电路的方法

    公开(公告)号：US5953617A

    公开(公告)日：1999-09-14

    申请号：US951870

    申请日：1997-10-17

    申请人： Joon-Woo Lee

    发明人： Joon-Woo Lee

    IPC分类号： H01L27/14 ,  H01L21/331 ,  H01L27/15 ,  H01L27/30 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L31/00 ,  H01L31/10 ,  H01L31/18 ,  H01L21/70

    CPC分类号： H01L31/1804 ,  H01L27/305 ,  H01L27/15 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for manufacturing an optoelectronic integrated circuit including a photo diode for transforming light into electric signals, an HBT for amplifying said electric signals from said photo diode, a capacitor, and a resistor is disclosed. An HBT including an emitter, a base, and a collector on a predetermined location of a semiconductor substrate, and a photo diode including an N type metal, non doped layer, and a P type metal are formed. A lower electrode of a capacitor is formed on the semiconductor substrate located in a place separated by a predetermined space from said photo diode. A SiN film is deposited over the surface of the resulting structure of the semiconductor substrate. The above described SiN film is patterned to exist only on the surfaces of the HBT, photo diode, lower electrode, and semiconductor substrate separated from the lower electrode by a predetermined space. Furthermore, a resistor is formed on the SiN film existing on a predetermined surface of the semiconductor substrate.

    摘要翻译： 公开了一种制造光电集成电路的方法，该光电集成电路包括用于将光转换成电信号的光电二极管，用于放大来自所述光电二极管的电信号的HBT，电容器和电阻器。 形成包括在半导体衬底的预定位置上的发射极，基极和集电极的HBT以及包括N型金属，非掺杂层和P型金属的光电二极管。 电容器的下电极形成在位于与所述光电二极管隔开预定空间的位置的半导体衬底上。 在半导体衬底的所得结构的表面上沉积SiN膜。 上述SiN膜被图案化，仅存在于与下电极分离预定空间的HBT，光电二极管，下电极和半导体衬底的表面上。 此外，在存在于半导体基板的预定表面上的SiN膜上形成电阻器。