公开(公告)号：US09343298B2

公开(公告)日：2016-05-17

申请号：US13245247

申请日：2011-09-26

Applicant: Mihaela Ioana Popovici ,  Johan Swerts ,  Malgorzata Pawlak ,  Kazuyuki Tomida ,  Min-Soo Kim ,  Jorge Kittl ,  Sven Van Elshocht

Inventor： Mihaela Ioana Popovici ,  Johan Swerts ,  Malgorzata Pawlak ,  Kazuyuki Tomida ,  Min-Soo Kim ,  Jorge Kittl ,  Sven Van Elshocht

IPC: B05D5/12 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L49/02

CPC classification number: H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

Abstract: The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.

Abstract translation: 本公开提供了一种在半导体衬底上制造层叠层的方法。 该方法包括：制备基板第一导电层; 并且通过ALD在所述导电层上产生一层次叠层，所述子堆叠中的至少一层是TiO 2层，所述子堆叠的其它层是具有适合于 在所述子层叠层结晶时形成立方体钙钛矿相。 通过热处理获得结晶。 当用于金属 - 绝缘体 - 金属电容器时，层叠层可以提供改进的特性，因为TiO 2层存在于子层中。

公开(公告)号：US20110147900A1

公开(公告)日：2011-06-23

申请号：US12962288

申请日：2010-12-07

Applicant: Christoph Adelmann ,  Johan Swerts ,  Sven Van Elshocht ,  Jorge Kittl

Inventor： Christoph Adelmann ,  Johan Swerts ,  Sven Van Elshocht ,  Jorge Kittl

IPC: H01L23/58 ,  H01L21/316

CPC classification number: H01L21/31691 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

Abstract: The present disclosure is related to a dielectric layer comprising a rare-earth aluminate (RExAl2-xO3 with 0

Abstract translation: 本公开涉及包含稀土铝酸盐（RE x Al 2-x O 3，0

公开(公告)号：US08649154B2

公开(公告)日：2014-02-11

申请号：US13247805

申请日：2011-09-28

Applicant: Mihaela Ioana Popovici ,  Johan Swerts ,  Jorge Kittl ,  Sven Van Elshocht

Inventor： Mihaela Ioana Popovici ,  Johan Swerts ,  Jorge Kittl ,  Sven Van Elshocht

IPC: H01G4/30

CPC classification number: H01L21/02175 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/0228 ,  H01L28/40 ,  H01L28/65 ,  H01L28/75

Abstract: Methods of manufacturing metal-insulator-metal capacitor structures, and the metal-insulator-metal capacitor structures obtained, are disclosed. In one embodiment, a method includes providing a substrate, forming on the substrate a first metal layer comprising a first metal, and using atomic layer deposition with an H2O oxidant to deposit on the first metal layer a protective layer comprising TiO2. The method further includes using atomic layer deposition with an O3 oxidant to deposit on the protective layer a dielectric layer of a dielectric material, and forming on the dielectric layer a second metal layer comprising a second metal. In another embodiment, a metal-insulator-metal capacitor includes a bottom electrode comprising a first metal, a protective layer deposited on the bottom electrode and comprising TiO2, a dielectric layer deposited on the protective layer and comprising a dielectric material, and a top electrode formed on the dielectric layer and comprising a second metal.

Abstract translation: 公开了制造金属 - 绝缘体 - 金属电容器结构的方法以及所获得的金属 - 绝缘体 - 金属电容器结构。 在一个实施例中，一种方法包括提供衬底，在衬底上形成包括第一金属的第一金属层，并且使用与H 2 O氧化剂的原子层沉积在第一金属层上沉积包含TiO 2的保护层。 该方法还包括使用原子层沉积与O 3氧化剂在保护层上沉积电介质材料的电介质层，并在电介质层上形成包含第二金属的第二金属层。 在另一个实施例中，金属 - 绝缘体 - 金属电容器包括底部电极，其包括第一金属，沉积在底部电极上并包含TiO 2的保护层，沉积在保护层上并包括电介质材料的电介质层，以及顶部电极 形成在介电层上并且包括第二金属。

公开(公告)号：US07629270B2

公开(公告)日：2009-12-08

申请号：US11212503

申请日：2005-08-24

Applicant: Johan Swerts ,  Hilde De Witte ,  Jan Willem Maes ,  Christophe F. Pomarede ,  Ruben Haverkort ,  Yuet Mei Wan ,  Marinus J. De Blank ,  Cornelius A. Van Der Jeugd ,  Jacobus Johannes Beulens

Inventor： Johan Swerts ,  Hilde De Witte ,  Jan Willem Maes ,  Christophe F. Pomarede ,  Ruben Haverkort ,  Yuet Mei Wan ,  Marinus J. De Blank ,  Cornelius A. Van Der Jeugd ,  Jacobus Johannes Beulens

IPC: H01L21/31

CPC classification number: H01L21/28194 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/3185 ,  H01L29/518

Abstract: A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.

Abstract translation: 通过暴露于远程激发的物质而活化的氮前体被用作形成含氮层的反应物。 远程激发的物质可以是例如已经在微波自由基发生器中激发的N 2，Ar和/或He。 在微波自由基发生器的下游和衬底的上游，受激物质的流动与NH 3流混合。 激发的物质激活NH3。 底物暴露于活化的NH 3和被激发的物质。 衬底也可以暴露于另一物质的前体，以在化学气相沉积中形成化合物层。 此外，已经沉积的层可以通过暴露于活化的NH 3和被激发的物质而被氮化，这导致比等离子体氮化更高的氮掺入水平，使用单独的使用激发的N 2，或者使用单独的NH 3进行热氮化，具有相同的工艺温度 和氮化时间。

公开(公告)号：US20120075767A1

公开(公告)日：2012-03-29

申请号：US13247805

申请日：2011-09-28

Applicant: Mihaela Ioana Popovici ,  Johan Swerts ,  Jorge Kittl ,  Sven Van Elshocht

Inventor： Mihaela Ioana Popovici ,  Johan Swerts ,  Jorge Kittl ,  Sven Van Elshocht

IPC: H01G4/30 ,  H01L21/02

CPC classification number: H01L21/02175 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02244 ,  H01L21/0228 ,  H01L28/40 ,  H01L28/65 ,  H01L28/75

Abstract: Methods of manufacturing metal-insulator-metal capacitor structures, and the metal-insulator-metal capacitor structures obtained, are disclosed. In one embodiment, a method includes providing a substrate, forming on the substrate a first metal layer comprising a first metal, and using atomic layer deposition with an H2O oxidant to deposit on the first metal layer a protective layer comprising TiO2. The method further includes using atomic layer deposition with an O3 oxidant to deposit on the protective layer a dielectric layer of a dielectric material, and forming on the dielectric layer a second metal layer comprising a second metal. In another embodiment, a metal-insulator-metal capacitor includes a bottom electrode comprising a first metal, a protective layer deposited on the bottom electrode and comprising TiO2, a dielectric layer deposited on the protective layer and comprising a dielectric material, and a top electrode formed on the dielectric layer and comprising a second metal.

Abstract translation: 公开了制造金属 - 绝缘体 - 金属电容器结构的方法以及所获得的金属 - 绝缘体 - 金属电容器结构。 在一个实施例中，一种方法包括提供衬底，在衬底上形成包括第一金属的第一金属层，并且使用与H 2 O氧化剂的原子层沉积在第一金属层上沉积包含TiO 2的保护层。 该方法还包括使用原子层沉积与O 3氧化剂在保护层上沉积电介质材料的电介质层，并在电介质层上形成包含第二金属的第二金属层。 在另一个实施例中，金属 - 绝缘体 - 金属电容器包括底部电极，其包括第一金属，沉积在底部电极上并包含TiO 2的保护层，沉积在保护层上并包括电介质材料的电介质层，以及顶部电极 形成在介电层上并且包括第二金属。

公开(公告)号：US20060110943A1

公开(公告)日：2006-05-25

申请号：US11212503

申请日：2005-08-24

Applicant: Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

Inventor： Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

IPC: H01L21/31

CPC classification number: H01L21/28194 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/3185 ,  H01L29/518

Abstract: A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.

Abstract translation: 通过暴露于远程激发的物质而活化的氮前体被用作形成含氮层的反应物。 远程激发的物质可以是例如已经在微波自由基发生器中被激发的N 2，Ar和/或He。 微波自由基发生器下游和衬底上游，受激物质的流动与NH 3 3流混合。 激发的物质激活NH 3。 底物暴露于活化的NH 3和被激发的物质。 衬底也可以暴露于另一物质的前体，以在化学气相沉积中形成化合物层。 此外，已经沉积的层可以通过暴露于活化的NH 3和所激发的物质而被氮化，这导致使用激发的N 2 O 3的等离子体氮化导致更高的氮掺入水平， 单独使用NH 3或单独使用相同工艺温度和氮化持续时间的氮化。

公开(公告)号：US08405166B2

公开(公告)日：2013-03-26

申请号：US12962288

申请日：2010-12-07

Applicant: Christoph Adelmann ,  Johan Swerts ,  Sven Van Elshocht ,  Jorge Kittl

Inventor： Christoph Adelmann ,  Johan Swerts ,  Sven Van Elshocht ,  Jorge Kittl

IPC: H01L29/51 ,  H01L21/473

CPC classification number: H01L21/31691 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/792

Abstract: The present disclosure is related to a dielectric layer comprising a rare-earth aluminate (RExAl2-xO3 with 0

Abstract translation: 本公开涉及包含稀土铝酸盐（RE x Al 2-x O 3，0

公开(公告)号：US20120092807A1

公开(公告)日：2012-04-19

申请号：US13245247

申请日：2011-09-26

Applicant: Mihaela Ioana Popovici ,  Johan Swerts ,  Malgorzata Pawlak ,  Kazuyuki Tomida ,  Min-Soo Kim ,  Jorge Kittl ,  Sven Van Elshocht

Inventor： Mihaela Ioana Popovici ,  Johan Swerts ,  Malgorzata Pawlak ,  Kazuyuki Tomida ,  Min-Soo Kim ,  Jorge Kittl ,  Sven Van Elshocht

IPC: H01G4/06 ,  H01G4/20 ,  H01L21/02

CPC classification number: H01L21/02356 ,  C23C16/409 ,  C23C16/45529 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02304 ,  H01L28/56

Abstract: The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.

Abstract translation: 本公开提供了一种在半导体衬底上制造层叠层的方法。 该方法包括：制备基板第一导电层; 并且通过ALD在所述导电层上产生一层次叠层，所述子堆叠中的至少一层是TiO 2层，所述子堆叠的其它层是具有适合于 在所述子层叠层结晶时形成立方体钙钛矿相。 通过热处理获得结晶。 当用于金属 - 绝缘体 - 金属电容器时，层叠层可以提供改进的特性，因为TiO 2层存在于子层中。